메모리는 집적 회로에서 데이터 저장 장치로 사용되는 반도체 장치입니다. 이러한 장치는 비휘발성 또는 휘발성의 CBRAM, DRAM, EEPROM, EERAM, EPROM, 플래시, FRAM, NVSRAM, PCM(PRAM), PSRAM, RAM 및 SRAM의 여러 형식으로 제공됩니다. 이 장치의 메모리 크기는 64b ~ 6Tb이며 인터페이스는 I2C, MMC, 병렬, eMMC, 직렬, 단일 와이어, SPI, UFS, Xccela 버스 및 1-Wire입니다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
K4T51163QB-ZCD5Memory ICs Products | SAMSUNG | DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84 | 재고 | - | |
K4H510838C-UCB3Memory ICs Products | SAMSUNG | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, | 10906 | - | |
K4S560832J-UC75Memory ICs Products | SAMSUNG | Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, | 24208 | - | |
K6X1008C2D-TF70Memory ICs Products | SAMSUNG | SRAM Chip Async Single 5V 1M-bit 128K x 8 70ns 32-Pin TSOP-I / 128Kx8 bit Low Power CMOS Static RAM | 12767 | - | |
K4B1G1646D-HCH9Memory ICs Products | SAMSUNG | 1Gb D-die DDR3 SDRAM Specification | 재고 | - | |
K4S161622E-TC70Memory ICs Products | SAMSUNG | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | 재고 | - | |
K6F2008T2E-YF70Memory ICs Products | SAMSUNG | 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM | 재고 | - | |
K4D261638E-TC40Memory ICs Products | SAMSUNG | DDR DRAM, 8MX16, 0.6ns, CMOS, PDSO66, TSOP2-66 | 재고 | - | |
K4H561638F-UCCCMemory ICs Products | SAMSUNG | DDR DRAM, 16MX16, CMOS, PDSO66, | 재고 | - | |
K6X1008C2D-DF55Memory ICs Products | SAMSUNG | Standard SRAM, 128KX8, 55ns, CMOS, PDIP32, 0.600 INCH, DIP-32 | 재고 | - | |
K7I163682B-FC20Memory ICs Products | SAMSUNG | DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165 | 재고 | - | |
K4B2G1646E-BPH9Memory ICs Products | SAMSUNG | DRAM Chip DDR3 SDRAM 2Gbit 128Mx16 1.5V | 재고 | - | |
K6T1008C2C-GB55Memory ICs Products | SAMSUNG | Standard SRAM, 128KX8, 55ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32 | 재고 | - | |
K7D161874B-HC33Memory ICs Products | SAMSUNG | Standard SRAM, 1MX18, 1.7ns, CMOS, PBGA153 | 재고 | - | |
K4M28163PFMemory ICs Products | SAMSUNG | 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA | 6021 | - | |
K7A403600B-QC14Memory ICs Products | SAMSUNG | Cache SRAM, 128KX36, 4ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100 | 재고 | - | |
K9K1G08U0M-YCB0Memory ICs Products | SAMSUNG | Flash, 128MX8, 35ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48 | 재고 | - | |
KA100O015E-AJTTMemory ICs Products | SAMSUNG | eMCP eMMC + DRam | 재고 | - | |
KMJJS000WA-B409Memory ICs Products | SAMSUNG | eMCP eMMC + DRam | 3294 | - | |
K6X8016C3B-TF70TMemory ICs Products | SAMSUNG | SRAM 512Kx16 | 재고 | - | |
KBZ00X001M-A45000Memory ICs Products | SAMSUNG | eMCP eMMC + DRam | 재고 | - | |
K521F12ACG-B050Memory ICs Products | SAMSUNG | eMCP eMMC + DRam | 3997 | - | |
K521H12ACD-B060Memory ICs Products | SAMSUNG | eMCP eMMC + DRam | 1563 | - | |
K7A403600M-QC15Memory ICs Products | SAMSUNG | Cache SRAM, 128KX36, 3.8ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100 | 재고 | - | |
K9F5608U0C-DIB0Memory ICs Products | SAMSUNG | Flash, 32MX8, 30ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, TBGA-63 | 재고 | - |