메모리는 집적 회로에서 데이터 저장 장치로 사용되는 반도체 장치입니다. 이러한 장치는 비휘발성 또는 휘발성의 CBRAM, DRAM, EEPROM, EERAM, EPROM, 플래시, FRAM, NVSRAM, PCM(PRAM), PSRAM, RAM 및 SRAM의 여러 형식으로 제공됩니다. 이 장치의 메모리 크기는 64b ~ 6Tb이며 인터페이스는 I2C, MMC, 병렬, eMMC, 직렬, 단일 와이어, SPI, UFS, Xccela 버스 및 1-Wire입니다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
K4B2G0846D-HYK0Memory ICs Products | SAMSUNG | DDR DRAM, 256MX8, 0.225ns, CMOS, PBGA78 | 8009 | - | |
K4D28163HD-TC40Memory ICs Products | SAMSUNG | 재고 | - | ||
K4H510838G-LCCCMemory ICs Products | SAMSUNG | DDR DRAM, 64MX8, 0.65ns, CMOS, PDSO66, | 30513 | - | |
K9F1G08U0B-PCB0Memory ICs Products | SAMSUNG | SLC NAND Flash Parallel 3.3V 1G-bit 128M x 8 25us 48-Pin TSOP-I | 3749 | - | |
K8D6316UTM-YI07Memory ICs Products | SAMSUNG | 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory | 재고 | - | |
K6X8008C2B-TF70Memory ICs Products | SAMSUNG | 324 | - | ||
K4S643232E-TC60Memory ICs Products | SAMSUNG | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | 2104 | - | |
K6F2008U2E-YF70Memory ICs Products | SAMSUNG | 3251 | - | ||
K4D261638E-TC50Memory ICs Products | SAMSUNG | 재고 | - | ||
K4D261638E-TC33Memory ICs Products | SAMSUNG | 재고 | - | ||
K7N403609B-QC20Memory ICs Products | SAMSUNG | ZBT SRAM, 128KX36, 2.8ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100 | 재고 | - | |
K6R1008C1C-TI15Memory ICs Products | SAMSUNG | SRAM Chip Async Single 5V 1M-bit 128K x 8 15ns 32-Pin TSOP-II | 5757 | - | |
K6T4008C1B-GL70Memory ICs Products | SAMSUNG | 재고 | - | ||
K6F1016U4C-EF70Memory ICs Products | SAMSUNG | Standard SRAM, 64KX16, 70ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, TBGA-48 | 2273 | - | |
K6T1008C2E-GF70Memory ICs Products | SAMSUNG | Standard SRAM, 128KX8, 70ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32 | 1436 | - | |
K6T4008U1C-YF10Memory ICs Products | SAMSUNG | Standard SRAM, 512KX8, 100ns, CMOS, PDSO32, 8 X 13.40 MM, STSOP1-32 | 6907 | - | |
K7B161825A-QC75Memory ICs Products | SAMSUNG | Sync SRAM 1Mx18 | 재고 | - | |
K9F5608U0C-YCB0Memory ICs Products | SAMSUNG | Flash, 32MX8, 30ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48 | 74 | - | |
K9WCG08U5M-HIB0Memory ICs Products | SAMSUNG | 64Gb(8GB) DDR NAND Flash SLC | 3554 | - | |
KMQ82000SM-B418Memory ICs Products | SAMSUNG | eMCP eMMC + DRam | 2896 | - | |
K7N321831C-PC16Memory ICs Products | SAMSUNG | High Speed SRAM 2Mx18 100 TQFP | 재고 | - | |
K6T1008C1B-GB70Memory ICs Products | SAMSUNG | SRAM 128Kx8-7 | 재고 | - | |
K7R161882B-EI16Memory ICs Products | SAMSUNG | SRAM 1Mx18 FBGA | 재고 | - | |
KAD1257ACF-D090Memory ICs Products | SAMSUNG | eMCP eMMC + DRam | 재고 | - | |
KMNJ2000ZM-B207Memory ICs Products | SAMSUNG | eMCP eMMC + DRam | 1404 | - |