메모리는 집적 회로에서 데이터 저장 장치로 사용되는 반도체 장치입니다. 이러한 장치는 비휘발성 또는 휘발성의 CBRAM, DRAM, EEPROM, EERAM, EPROM, 플래시, FRAM, NVSRAM, PCM(PRAM), PSRAM, RAM 및 SRAM의 여러 형식으로 제공됩니다. 이 장치의 메모리 크기는 64b ~ 6Tb이며 인터페이스는 I2C, MMC, 병렬, eMMC, 직렬, 단일 와이어, SPI, UFS, Xccela 버스 및 1-Wire입니다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
K6X0808C1D-DF55Memory ICs Products | SAMSUNG | Standard SRAM, 32KX8, 55ns, CMOS, PDIP28, 0.600 INCH, DIP-28 | 재고 | - | |
K4S643232F-TC70Memory ICs Products | SAMSUNG | 2M X 32 SDRAM, FOUR BANKS OPERATION, 3.3V POWER SUPPLY | 445 | - | |
K4H511638D-UCCCMemory ICs Products | SAMSUNG | DDR DRAM, 32MX16, 0.65ns, CMOS, PDSO66, | 23695 | - | |
K4B2G1646E-BCH9Memory ICs Products | SAMSUNG | DRAM Chip DDR3 SDRAM 2Gbit 128Mx16 1.5V | 3158 | - | |
K6T4016U3C-TB70Memory ICs Products | SAMSUNG | 256Kx16 bit Low Power and Low Voltage CMOS Static RAM | 재고 | - | |
K4D261638F-TC40Memory ICs Products | SAMSUNG | DDR DRAM, 8MX16, 0.6ns, CMOS, PDSO66 | 2625 | - | |
K4B1G0846G-BCK0Memory ICs Products | SAMSUNG | DDR DRAM, 128MX8, 0.225ns, CMOS, PBGA78, | 165 | - | |
K7A403600B-PC16Memory ICs Products | SAMSUNG | SRAM Chip Sync Single 3.3V 4.5M-bit 128K x 36 3.5ns 100-Pin TQFP | 6871 | - | |
K7B801825B-QC75Memory ICs Products | SAMSUNG | Cache SRAM, 512KX18, 7.5ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100 | 2544 | - | |
K4M563233E-EE1HMemory ICs Products | SAMSUNG | Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90 | 9858 | - | |
K4H280438B-TCA2Memory ICs Products | SAMSUNG | DDR DRAM, 32MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2-66 | 재고 | - | |
K6T4016V3C-TF70Memory ICs Products | SAMSUNG | Standard SRAM, 256KX16, 70ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 | 45 | - | |
K4B8G1646Q-MYK0Memory ICs Products | SAMSUNG | DDP 8Gb Q-die DDR3L SDRAM | 4481 | - | |
K6T4008U1C-YB70Memory ICs Products | SAMSUNG | 512Kx8 bit Low Power and Low Voltage CMOS Static RAM | 재고 | - | |
K4H281638L-LCCCMemory ICs Products | SAMSUNG | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66 | 35002 | - | |
K4S641632E-TC75Memory ICs Products | SAMSUNG | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | 재고 | - | |
K8D1716UTCMemory ICs Products | SAMSUNG | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory | 재고 | - | |
K6X8008C2B-TF55Memory ICs Products | SAMSUNG | Standard SRAM, 1MX8, 55ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 | 재고 | - | |
K7P403622B-HC16Memory ICs Products | SAMSUNG | 128Kx36 & 256Kx18 Synchronous Pipelined SRAM | 9010 | - | |
K7B803625B-PI65Memory ICs Products | SAMSUNG | SRAM 256Kx36-65 | 재고 | - | |
K7N401809B-PC20Memory ICs Products | SAMSUNG | ZBT SRAM, 256KX18, 2.8ns, CMOS, PQFP100, 20 X 14 MM, ROHS COMPLIANT, TQFP-100 | 재고 | - | |
K7K1636U2C-EC33Memory ICs Products | SAMSUNG | MCP 512Mx36 18Mb DDR2 SRAM | 재고 | - | |
KMQN10006B-B318Memory ICs Products | SAMSUNG | eMCP eMMC + DRam | 1853 | - | |
K511F58ACM-A075Memory ICs Products | SAMSUNG | eMCP eMMC + DRam | 130 | - | |
K6T1008V2E-TB70000Memory ICs Products | SAMSUNG | 재고 | - |