메모리는 집적 회로에서 데이터 저장 장치로 사용되는 반도체 장치입니다. 이러한 장치는 비휘발성 또는 휘발성의 CBRAM, DRAM, EEPROM, EERAM, EPROM, 플래시, FRAM, NVSRAM, PCM(PRAM), PSRAM, RAM 및 SRAM의 여러 형식으로 제공됩니다. 이 장치의 메모리 크기는 64b ~ 6Tb이며 인터페이스는 I2C, MMC, 병렬, eMMC, 직렬, 단일 와이어, SPI, UFS, Xccela 버스 및 1-Wire입니다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
K3MF9F90MM-MGCEMemory ICs Products | SAMSUNG | DRAM Chip Mobile LPDDR3 SDRAM 3Gbit 96Mx32 504-Pin FBGA | 8515 | - | |
K6X4008T1F-BF70Memory ICs Products | SAMSUNG | Standard SRAM, 512KX8, 70ns, CMOS, PDSO32 | 1304 | - | |
K4S641632E-TC60Memory ICs Products | SAMSUNG | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | 재고 | - | |
K4D551638F-TC50Memory ICs Products | SAMSUNG | DDR DRAM, 16MX16, CMOS, PDSO66, | 재고 | - | |
K4S281632F-UL75Memory ICs Products | SAMSUNG | Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 | 재고 | - | |
K4D261638F-TC36Memory ICs Products | SAMSUNG | 1012 | - | ||
K9F1208R0B-JIB0Memory ICs Products | SAMSUNG | Flash, 64MX8, 40ns, PBGA63 | 10702 | - | |
K9F1208U0B-JIB0Memory ICs Products | SAMSUNG | Flash, 64MX8, 30ns, PBGA63 | 521 | - | |
K4D26323RA-GC36Memory ICs Products | SAMSUNG | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, FBGA-144 | 336 | - | |
K4B2G0846D-HYH9Memory ICs Products | SAMSUNG | 2Gb D-die DDR3L SDRAM | 6007 | - | |
K4N56163QF-GC30Memory ICs Products | SAMSUNG | 재고 | - | ||
K4S641632E-TL1LMemory ICs Products | SAMSUNG | 64Mbit SDRAM | 1095 | - | |
K9F1208U0B-PCB0Memory ICs Products | SAMSUNG | Flash, 64MX8, 30ns, PDSO48, | 416 | - | |
K4D551638D-TC60Memory ICs Products | SAMSUNG | SMT 50PCS/TRAY | 2413 | - | |
K4D263238F-QC50Memory ICs Products | SAMSUNG | DDR DRAM, 4MX32, 0.7ns, CMOS, PQFP100, 20 X 14 MM, 0.65 MM PITCH, TQFP-100 | 2434 | - | |
K7N803601B-QC13Memory ICs Products | SAMSUNG | ZBT SRAM, 256KX36, 4.2ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100 | 4282 | - | |
K5A3240YTC-T755Memory ICs Products | SAMSUNG | Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM | 1293 | - | |
K4S640832H-UC75Memory ICs Products | SAMSUNG | Synchronous DRAM, 8MX8, 5.4ns, CMOS, PDSO54 | 34008 | - | |
K7N803601B-QC16Memory ICs Products | SAMSUNG | ZBT SRAM, 256KX36, 3.5ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100 | 재고 | - | |
K9F5616Q0C-DIB0Memory ICs Products | SAMSUNG | 512Mb/256Mb 1.8V NAND Flash Errata | 재고 | - | |
KMQN10013M-B318Memory ICs Products | SAMSUNG | eMCP eMMC + DRam | 3908 | - | |
KAT007015C-BRTTT00Memory ICs Products | SAMSUNG | eMCP eMMC + DRam | 재고 | - | |
K5N5666ATC-BQ12Memory ICs Products | SAMSUNG | MCP 256Mb NOR/64Mb SRAM | 재고 | - | |
KMI8U000MA-B605Memory ICs Products | SAMSUNG | eMCP ME1616 16GB eMMC + DRam | 재고 | - | |
K6T1008C2E-TF70000Memory ICs Products | SAMSUNG | SRAM 128Kx8-70 | 1382 | - |