메모리는 집적 회로에서 데이터 저장 장치로 사용되는 반도체 장치입니다. 이러한 장치는 비휘발성 또는 휘발성의 CBRAM, DRAM, EEPROM, EERAM, EPROM, 플래시, FRAM, NVSRAM, PCM(PRAM), PSRAM, RAM 및 SRAM의 여러 형식으로 제공됩니다. 이 장치의 메모리 크기는 64b ~ 6Tb이며 인터페이스는 I2C, MMC, 병렬, eMMC, 직렬, 단일 와이어, SPI, UFS, Xccela 버스 및 1-Wire입니다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
K4S640432F-TC75Memory ICs Products | SAMSUNG | 재고 | - | ||
K4D551638D-TC40Memory ICs Products | SAMSUNG | DDR DRAM, 16MX16, 0.6ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | 재고 | - | |
K6T4008C1C-VB55Memory ICs Products | SAMSUNG | Standard SRAM, 512KX8, 55ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32 | 재고 | - | |
K6F2008V2E-YF70Memory ICs Products | SAMSUNG | Standard SRAM, 256KX8, 70ns, CMOS, PDSO32, 8 X 13.40 MM, TSOP1-32 | 1679 | - | |
K4S281632E-TC75Memory ICs Products | SAMSUNG | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | 재고 | - | |
K4S641632K-UC75Memory ICs Products | SAMSUNG | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 | 3033 | - | |
K8D1716UTC-FI07Memory ICs Products | SAMSUNG | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory | 재고 | - | |
K6T4008V1C-YF70Memory ICs Products | SAMSUNG | Standard SRAM, 512KX8, 70ns, CMOS, PDSO32, 8 X 13.40 MM, STSOP1-32 | 20004 | - | |
K4B2G1646Q-BCK0Memory ICs Products | SAMSUNG | DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | 4019 | - | |
K6X4008C1F-VB55Memory ICs Products | SAMSUNG | Standard SRAM, 512KX8, 55ns, CMOS, PDSO32 | 재고 | - | |
K4D551638F-TC36Memory ICs Products | SAMSUNG | 256Mbit GDDR SDRAM | 재고 | - | |
K4S561632E-TC75Memory ICs Products | SAMSUNG | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | 9915 | - | |
K4S56163LFMemory ICs Products | SAMSUNG | 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC | 재고 | - | |
K4T1G164QF-BCF7Memory ICs Products | SAMSUNG | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84 | 5015 | - | |
K4S280832F-UC75Memory ICs Products | SAMSUNG | Synchronous DRAM, 16MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 | 5006 | - | |
K6R1016C1D-JC10Memory ICs Products | SAMSUNG | Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, SOJ-44 | 2731 | - | |
KFM4G16Q5B-BEB1Memory ICs Products | SAMSUNG | 1Gb OneNAND Flash 64Mx16 1.8V FBGA | 1295 | - | |
KA100O15M-AJTTMemory ICs Products | SAMSUNG | eMCP eMMC + DRam | 재고 | - | |
K5W1G12ACM-BL60TNOMemory ICs Products | SAMSUNG | MCP 512Mb NAND/512M SDRAM | 재고 | - | |
K7N163645A-HC16Memory ICs Products | SAMSUNG | ZBT SRAM, 512KX36, 3.5ns, CMOS, PBGA119, BGA-119 | 재고 | - | |
KMQ72000SM-B316Memory ICs Products | SAMSUNG | eMCP eMMC + DRam | 681 | - | |
K6T1008C2E-RB70000Memory ICs Products | SAMSUNG | 재고 | - | ||
KMQ820013M-B4190Memory ICs Products | SAMSUNG | eMCP eMMC + DRam | 재고 | - | |
K5N2833ATB-AQ12000Memory ICs Products | SAMSUNG | MCP 128Mb NOR/32Mb SRAM | 재고 | - | |
K7R641884M-EC25Memory ICs Products | SAMSUNG | QDR II SRAM 4Mx18 165 FBGA | 1623 | - |