메모리는 집적 회로에서 데이터 저장 장치로 사용되는 반도체 장치입니다. 이러한 장치는 비휘발성 또는 휘발성의 CBRAM, DRAM, EEPROM, EERAM, EPROM, 플래시, FRAM, NVSRAM, PCM(PRAM), PSRAM, RAM 및 SRAM의 여러 형식으로 제공됩니다. 이 장치의 메모리 크기는 64b ~ 6Tb이며 인터페이스는 I2C, MMC, 병렬, eMMC, 직렬, 단일 와이어, SPI, UFS, Xccela 버스 및 1-Wire입니다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
K6T1008C2C-GB70Memory ICs Products | SAMSUNG | 32P SOIC 32P SOIC | 재고 | - | |
K4S641632H-UC75Memory ICs Products | SAMSUNG | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, | 23711 | - | |
K6R1016C1D-KI10Memory ICs Products | SAMSUNG | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). | 재고 | - | |
K6R4016C1D-UI10Memory ICs Products | SAMSUNG | SRAM Chip Async Single 5V 4M-Bit 256K x 16 10ns 44-Pin TSOP-II | 재고 | - | |
K4B4G0846B-HCK0Memory ICs Products | SAMSUNG | DDR DRAM, 512MX8, CMOS, PBGA78, FBGA-78 | 8220 | - | |
K6X4008T1F-VB70Memory ICs Products | SAMSUNG | Standard SRAM, 512KX8, 70ns, CMOS, PDSO32 | 2781 | - | |
K4D263238M-QC55Memory ICs Products | SAMSUNG | DDR DRAM, 4MX32, 0.75ns, CMOS, PQFP100, 20 X 14 MM, 0.65 MM PITCH, TQFP-100 | 재고 | - | |
K4S641632F-TC60Memory ICs Products | SAMSUNG | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | 1948 | - | |
K6R4008V1D-JC10Memory ICs Products | SAMSUNG | Standard SRAM, 512KX8, 10ns, CMOS, PDSO36, 0.400 INCH, PLASTIC, SOJ-36 | 3641 | - | |
K4S643232H-TC50Memory ICs Products | SAMSUNG | 128 | - | ||
K7D803671B-HC30Memory ICs Products | SAMSUNG | DDR SRAM, 256KX36, 0.2ns, CMOS, PBGA153, 14 X 22 MM, BGA-153 | 404 | - | |
K6X4008C1F-GB55Memory ICs Products | SAMSUNG | Standard SRAM, 512KX8, 55ns, CMOS, PDSO32 | 49 | - | |
K4S643232H-TC60Memory ICs Products | SAMSUNG | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86 | 8006 | - | |
K6X4008C1F-GB70Memory ICs Products | SAMSUNG | Standard SRAM, 512KX8, 70ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32 | 14723 | - | |
K4D26323QG-GC2AMemory ICs Products | SAMSUNG | 재고 | - | ||
K4D263238K-VC40Memory ICs Products | SAMSUNG | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, | 11810 | - | |
K6T0808C1D-GF70Memory ICs Products | SAMSUNG | Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 0.450 INCH, PLASTIC, SOP-28 | 10506 | - | |
K7B163635B-QC75Memory ICs Products | SAMSUNG | SRAM 512Kx36 | 재고 | - | |
K6R4008V1C-JC15000Memory ICs Products | SAMSUNG | SRAM Chip Async Single 3.3V 4M-bit 512K x 8 15ns 36-Pin SOJ Tray | 재고 | - | |
K6T1008C2E-RF70Memory ICs Products | SAMSUNG | 재고 | - | ||
K5D1G572CM-D075Memory ICs Products | SAMSUNG | MCP 1G NAND/256M Mobile SDRAM | 재고 | - | |
K4C561638C-TCD3Memory ICs Products | SAMSUNG | SD 16Mx16 Network DRAM | 재고 | - | |
K5N1229ACC-BQ12Memory ICs Products | SAMSUNG | MCP 512Mb NOR/128Mb SRAM | 재고 | - | |
KMQ5X000SA-B315Memory ICs Products | SAMSUNG | eMCP eMMC + DRam | 4445 | - | |
KA8520N00A-BWWWMemory ICs Products | SAMSUNG | eMCP eMMC + DRam | 1291 | - |