메모리는 집적 회로에서 데이터 저장 장치로 사용되는 반도체 장치입니다. 이러한 장치는 비휘발성 또는 휘발성의 CBRAM, DRAM, EEPROM, EERAM, EPROM, 플래시, FRAM, NVSRAM, PCM(PRAM), PSRAM, RAM 및 SRAM의 여러 형식으로 제공됩니다. 이 장치의 메모리 크기는 64b ~ 6Tb이며 인터페이스는 I2C, MMC, 병렬, eMMC, 직렬, 단일 와이어, SPI, UFS, Xccela 버스 및 1-Wire입니다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
K4M56323PI-HG75Memory ICs Products | SAMSUNG | MOBILE-SDRAM 2M X 16BIT X 4 BANKS MOBILE SDRAM IN 54FBGA | 4240 | - | |
K8D6316UBM-DI07Memory ICs Products | SAMSUNG | Flash, 4MX16, 70ns, PBGA48 | 6010 | - | |
K8D6316UTM-PI07Memory ICs Products | SAMSUNG | 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory | 7718 | - | |
K6X4008C1F-BF70Memory ICs Products | SAMSUNG | 512Kx8 bit Low Power full CMOS Static RAM | 재고 | - | |
K6X1008C2D-GB70Memory ICs Products | SAMSUNG | Standard SRAM, 128KX8, 70ns, CMOS, PDSO32 | 31018 | - | |
K7M801825B-QC75Memory ICs Products | SAMSUNG | 재고 | - | ||
K4S641632F-TC70Memory ICs Products | SAMSUNG | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | 재고 | - | |
K4M64163PK-BG1LMemory ICs Products | SAMSUNG | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA | 133483 | - | |
K4D26323QG-GC33Memory ICs Products | SAMSUNG | 재고 | - | ||
K4S641632H-TC70Memory ICs Products | SAMSUNG | 1495 | - | ||
K4B2G1646C-HCH9Memory ICs Products | SAMSUNG | DDR DRAM, 128MX16, 0.255ns, CMOS, PBGA96, | 1411 | - | |
K7N401809B-QC20Memory ICs Products | SAMSUNG | 128Kx36 & 256Kx18 Pipelined NtRAM | 재고 | - | |
K4S281632F-TL75Memory ICs Products | SAMSUNG | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | 21006 | - | |
K6X1008T2D-TB70Memory ICs Products | SAMSUNG | 재고 | - | ||
K4H510838C-ZCB3Memory ICs Products | SAMSUNG | DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, | 재고 | - | |
K6R1008V1C-TI15Memory ICs Products | SAMSUNG | 1112 | - | ||
K9F1G08U0C-PCB0Memory ICs Products | SAMSUNG | NAND Flash 3.3V 1G-bit 128M x 8 48-Pin TSOP-I | 3211 | - | |
K7A203600B-QC14Memory ICs Products | SAMSUNG | Cache SRAM, 64KX36, 4ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100 | 7003 | - | |
K6T4008C1B-GB55Memory ICs Products | SAMSUNG | Standard SRAM, 512KX8, 55ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32 | 재고 | - | |
KA100H00ZA-AJ77Memory ICs Products | SAMSUNG | eMCP eMMC + DRam | 20 | - | |
K5D1213ACG-D075Memory ICs Products | SAMSUNG | eMCP eMMC + DRam | 재고 | - | |
K9K8G08U0B-PCB0Memory ICs Products | SAMSUNG | 1G X 8 / 2G X 8 BIT NAND FLASH MEMORY | 4720 | - | |
K7R161884B-FC30Memory ICs Products | SAMSUNG | SRAM 1Mx18 FBGA | 재고 | - | |
K521F12ACA-B060Memory ICs Products | SAMSUNG | eMCP eMMC + DRam | 1703 | - | |
K9K8G08U0D-SIB0Memory ICs Products | SAMSUNG | SLC NAND Flash Serial 3.3V 8G-bit 1G x 8 48-Pin TSSOP-I | 1412 | - |