메모리는 집적 회로에서 데이터 저장 장치로 사용되는 반도체 장치입니다. 이러한 장치는 비휘발성 또는 휘발성의 CBRAM, DRAM, EEPROM, EERAM, EPROM, 플래시, FRAM, NVSRAM, PCM(PRAM), PSRAM, RAM 및 SRAM의 여러 형식으로 제공됩니다. 이 장치의 메모리 크기는 64b ~ 6Tb이며 인터페이스는 I2C, MMC, 병렬, eMMC, 직렬, 단일 와이어, SPI, UFS, Xccela 버스 및 1-Wire입니다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
K4S560432E-TC75Memory ICs Products | SAMSUNG | 256Mb E-die SDRAM Specification | 재고 | - | |
K6F1616U6A-EF70Memory ICs Products | SAMSUNG | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | 3036 | - | |
K7B803625B-QC75Memory ICs Products | SAMSUNG | 637 | - | ||
K6T1008V2C-TB70Memory ICs Products | SAMSUNG | 128K x8 bit Low Power and Low Voltage CMOS Static RAM | 재고 | - | |
K4R271669B-NCK8Memory ICs Products | SAMSUNG | Rambus DRAM, 8MX16, 45ns, CMOS, PBGA62, CENTER BONDED, MICRO, CSP, BGA-62 | 재고 | - | |
K6R4008V1D-JI10Memory ICs Products | SAMSUNG | Standard SRAM, 512KX8, 10ns, CMOS, PDSO36, 0.400 INCH, PLASTIC, SOJ-36 | 재고 | - | |
K4J52324QC-BJ12Memory ICs Products | SAMSUNG | 512Mbit GDDR3 SDRAM | 재고 | - | |
K4R761869A-GCT9Memory ICs Products | SAMSUNG | Rambus DRAM, 32MX18, 32ns, CMOS, PBGA92 | 재고 | - | |
K6X1008C2D-BF70Memory ICs Products | SAMSUNG | Standard SRAM, 128KX8, 70ns, CMOS, PDSO32 | 12610 | - | |
K7A203200B-QC14Memory ICs Products | SAMSUNG | Cache SRAM, 64KX32, 4ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100 | 재고 | - | |
K4D553238F-GC33Memory ICs Products | SAMSUNG | DRAM | 재고 | - | |
K6X4008C1F-BF55Memory ICs Products | SAMSUNG | Standard SRAM, 512KX8, 55ns, CMOS, PDSO32, 0.525 INCH, LEAD FREE, PLASTIC, SOP-32 | 2848 | - | |
K4D263238G-GC2AMemory ICs Products | SAMSUNG | 569 | - | ||
K4H561638D-TCB0Memory ICs Products | SAMSUNG | DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | 373 | - | |
K6X1008C2D-DB70Memory ICs Products | SAMSUNG | Standard SRAM, 128KX8, 70ns, CMOS, PDIP32 | 74 | - | |
K4S281632I-UC75Memory ICs Products | SAMSUNG | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 | 6015 | - | |
KA100O015D-BJTTMemory ICs Products | SAMSUNG | eMCP eMMC + DRam | 재고 | - | |
K5D1258DAC-A090Memory ICs Products | SAMSUNG | eMCP eMMC + DRam | 재고 | - | |
K521H57ACC-B050Memory ICs Products | SAMSUNG | eMCP eMMC + DRam | 7000 | - | |
K7N643645M-PC16Memory ICs Products | SAMSUNG | SRAM 64MX36 166MHz | 재고 | - | |
KMN9W000RM-B205Memory ICs Products | SAMSUNG | eMCP eMMC + DRam | 재고 | - | |
K4M56163LG-BN75Memory ICs Products | SAMSUNG | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54 | 12323 | - | |
KMQ8X000SA-B414Memory ICs Products | SAMSUNG | eMCP eMMC + DRam | 670 | - | |
KMFJ20005B-A213Memory ICs Products | SAMSUNG | MCP 4Gb RAM/32GB NAND Flash MT2601 | 재고 | - | |
K6R4008C1C-JC12Memory ICs Products | SAMSUNG | Standard SRAM, 512KX8, 12ns, CMOS, PDSO36, 0.400 INCH, PLASTIC, SOJ-36 | 재고 | - |