메모리는 집적 회로에서 데이터 저장 장치로 사용되는 반도체 장치입니다. 이러한 장치는 비휘발성 또는 휘발성의 CBRAM, DRAM, EEPROM, EERAM, EPROM, 플래시, FRAM, NVSRAM, PCM(PRAM), PSRAM, RAM 및 SRAM의 여러 형식으로 제공됩니다. 이 장치의 메모리 크기는 64b ~ 6Tb이며 인터페이스는 I2C, MMC, 병렬, eMMC, 직렬, 단일 와이어, SPI, UFS, Xccela 버스 및 1-Wire입니다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
K6X1008T2D-PF70Memory ICs Products | SAMSUNG | Standard SRAM, 128KX8, 70ns, CMOS, PDSO32 | 재고 | - | |
K4S641632H-UC70Memory ICs Products | SAMSUNG | 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) | 재고 | - | |
K4S161622H-TC60Memory ICs Products | SAMSUNG | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | 52001 | - | |
K6R1016V1D-EC10Memory ICs Products | SAMSUNG | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). | 재고 | - | |
K4S641632H-TC75Memory ICs Products | SAMSUNG | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | 42602 | - | |
K4S643232E-TC50Memory ICs Products | SAMSUNG | Synchronous DRAM, 2MX32, 4.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | 재고 | - | |
K4R441869B-MCK8Memory ICs Products | SAMSUNG | 256K x 16/18 bit x 32s banks Direct RDRAMTM | 재고 | - | |
K6X1008T2D-BF70Memory ICs Products | SAMSUNG | 722 | - | ||
K4T1G164QF-BCE7Memory ICs Products | SAMSUNG | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84 | 20474 | - | |
K6R1008V1D-UC10Memory ICs Products | SAMSUNG | 17004 | - | ||
K4D551638F-TC40Memory ICs Products | SAMSUNG | DDR DRAM, 16MX16, CMOS, PDSO66, | 재고 | - | |
K6T4008U1C-VF85Memory ICs Products | SAMSUNG | Standard SRAM, 512KX8, 85ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32 | 재고 | - | |
K4D261638F-TC33Memory ICs Products | SAMSUNG | 재고 | - | ||
K4S561632E-TL75Memory ICs Products | SAMSUNG | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | 5370 | - | |
K4B2G1646Q-BCMAMemory ICs Products | SAMSUNG | DRAM Chip DDR3 SDRAM 2Gbit 128Mx16 1.5V | 67604 | - | |
K4B1G1646G-BCK0Memory ICs Products | SAMSUNG | DDR DRAM, 64MX16, 0.225ns, CMOS, PBGA96 | 8205 | - | |
KMI8X000MM-B606Memory ICs Products | SAMSUNG | eMCP eMMC + DRam | 2263 | - | |
K9F4G08U0D-SCB0Memory ICs Products | SAMSUNG | SLC NAND Flash Serial 3.3V 4G-bit 512M x 8 25ns 48-Pin TSOP-I | 6342 | - | |
KFW4G16Q2M-DEB5Memory ICs Products | SAMSUNG | Flash, 256MX16, 14.5ns, PBGA63 | 1013 | - | |
K5D1H13ACM-D075Memory ICs Products | SAMSUNG | MCP 1G NAND/512M SDRAM | 73 | - | |
KMQ31000SM-B417Memory ICs Products | SAMSUNG | eMCP eMMC + DRam | 1692 | - | |
61759\K6R1016V1D-TC10T00Memory ICs Products | SAMSUNG | SRAM 64Kx16-10 3.3V TSOP | 재고 | - | |
K6X4016T3F-TB55Memory ICs Products | SAMSUNG | SRAM 256kx16 Low Pwr Low Voltage | 재고 | - | |
K7A403609B-QC25Memory ICs Products | SAMSUNG | Cache SRAM, 128KX36, 2.4ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100 | 458 | - | |
K6R1008V1D-JC08Memory ICs Products | SAMSUNG | Standard SRAM, 128KX8, 8ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 | 재고 | - |