메모리는 집적 회로에서 데이터 저장 장치로 사용되는 반도체 장치입니다. 이러한 장치는 비휘발성 또는 휘발성의 CBRAM, DRAM, EEPROM, EERAM, EPROM, 플래시, FRAM, NVSRAM, PCM(PRAM), PSRAM, RAM 및 SRAM의 여러 형식으로 제공됩니다. 이 장치의 메모리 크기는 64b ~ 6Tb이며 인터페이스는 I2C, MMC, 병렬, eMMC, 직렬, 단일 와이어, SPI, UFS, Xccela 버스 및 1-Wire입니다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
K6T0808C1D-GB70Memory ICs Products | SAMSUNG | Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 0.450 INCH, PLASTIC, SOP-28 | 1216 | - | |
K4H561638J-LCCCMemory ICs Products | SAMSUNG | DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66 | 17614 | - | |
K6T4008V1C-VB70Memory ICs Products | SAMSUNG | 67 | - | ||
K7P403622B-HC20Memory ICs Products | SAMSUNG | 128Kx36 & 256Kx18 Synchronous Pipelined SRAM | 2649 | - | |
K6R1016V1D-JC10Memory ICs Products | SAMSUNG | Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, SOJ-44 | 1359 | - | |
K4T1G084QA-ZCE6Memory ICs Products | SAMSUNG | 재고 | - | ||
K6T1008C2E-DL70Memory ICs Products | SAMSUNG | Standard SRAM, 128KX8, 70ns, CMOS, PDIP32, 0.600 INCH, DIP-32 | 재고 | - | |
K4N26323AE-GC20Memory ICs Products | SAMSUNG | DDR DRAM, 4MX32, 0.35ns, CMOS, PBGA144, FBGA-144 | 재고 | - | |
K4D64163HF-TC50Memory ICs Products | SAMSUNG | 5502 | - | ||
K4S643232C-TC80Memory ICs Products | SAMSUNG | Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | 26017 | - | |
K4S561633FMemory ICs Products | SAMSUNG | 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC | 5707 | - | |
K6R1016V1D-TC10Memory ICs Products | SAMSUNG | Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 | 재고 | - | |
K4T51083QC-ZCE6Memory ICs Products | SAMSUNG | 512Mb C-die DDR2 SDRAM | 5748 | - | |
K4X51323PC-8GC3Memory ICs Products | SAMSUNG | 27016 | - | ||
K4S643232C-TC70Memory ICs Products | SAMSUNG | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | 3074 | - | |
K4S56163LF-XG75Memory ICs Products | SAMSUNG | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54 | 21509 | - | |
K6F8016U6D-FF55Memory ICs Products | SAMSUNG | 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | 재고 | - | |
K4J55323QF-GC20Memory ICs Products | SAMSUNG | DDR DRAM, 8MX32, 0.35ns, CMOS, PBGA144 | 6228 | - | |
K6F4008U2E-EF70Memory ICs Products | SAMSUNG | 512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM | 재고 | - | |
KMJJ000WA-B409Memory ICs Products | SAMSUNG | eMCP eMMC + DRam | 3822 | - | |
K7I323682C-FC25Memory ICs Products | SAMSUNG | 7647 | - | ||
KA100K015M-AJTT0PCMemory ICs Products | SAMSUNG | eMCP eMMC + DRam | 재고 | - | |
K5D1H12ACC-A075Memory ICs Products | SAMSUNG | MCP 512Mb NAND/1G SDRAM | 재고 | - | |
K5A4G2GQCM-B019Memory ICs Products | SAMSUNG | eMCP eMMC + DRam | 2145 | - | |
K6T1008C2E-GF70000Memory ICs Products | SAMSUNG | SRAM 128Kx8-7 5V SOJ | 재고 | - |