메모리는 집적 회로에서 데이터 저장 장치로 사용되는 반도체 장치입니다. 이러한 장치는 비휘발성 또는 휘발성의 CBRAM, DRAM, EEPROM, EERAM, EPROM, 플래시, FRAM, NVSRAM, PCM(PRAM), PSRAM, RAM 및 SRAM의 여러 형식으로 제공됩니다. 이 장치의 메모리 크기는 64b ~ 6Tb이며 인터페이스는 I2C, MMC, 병렬, eMMC, 직렬, 단일 와이어, SPI, UFS, Xccela 버스 및 1-Wire입니다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
K4D261638E-TC36Memory ICs Products | SAMSUNG | DDR DRAM, 8MX16, 0.6ns, CMOS, PDSO66, TSOP2-66 | 재고 | - | |
K4J55323QG-BC20Memory ICs Products | SAMSUNG | 8017 | - | ||
K4S511632B-UC75Memory ICs Products | SAMSUNG | Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54 | 12718 | - | |
K4T1G084QF-BCE6Memory ICs Products | SAMSUNG | DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA60 | 29721 | - | |
K4S643232F-TC60Memory ICs Products | SAMSUNG | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | 3086 | - | |
K6R1016V1D-TC08Memory ICs Products | SAMSUNG | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). | 재고 | - | |
K4J55323QG-BC14Memory ICs Products | SAMSUNG | 256MBIT GDDR3 Sdram | 5176 | - | |
K6R1008V1D-TI10Memory ICs Products | SAMSUNG | Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32 | 재고 | - | |
K6X1008T2D-GF70Memory ICs Products | SAMSUNG | Standard SRAM, 128KX8, 70ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32 | 재고 | - | |
K4S281632E-TC60Memory ICs Products | SAMSUNG | DRAM Chip SDRAM 128M-Bit 8Mx16 3.3V 54-Pin TSOP-II | 30008 | - | |
K4S280432F-TL75Memory ICs Products | SAMSUNG | 128Mb F-die SDRAM Specification | 재고 | - | |
K4M64163PKMemory ICs Products | SAMSUNG | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA | 재고 | - | |
K6F2016U4DMemory ICs Products | SAMSUNG | 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | 31009 | - | |
K9F2808U0C-DCB0Memory ICs Products | SAMSUNG | 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory | 재고 | - | |
K6X4016T3F-TF70Memory ICs Products | SAMSUNG | Standard SRAM, 256KX16, 70ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 | 1059 | - | |
K4T51083QC-ZCD5Memory ICs Products | SAMSUNG | DDR DRAM, 64MX8, 0.5ns, CMOS, PBGA60 | 4621 | - | |
K8D6316UBM-TI07Memory ICs Products | SAMSUNG | 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory | 재고 | - | |
K4J55323QG-BC12Memory ICs Products | SAMSUNG | DDR DRAM, 8MX32, 0.23ns, CMOS, PBGA136 | 재고 | - | |
K5N6433ATC-BT800Memory ICs Products | SAMSUNG | eMCP eMMC + DRam | 재고 | - | |
K9F5608UOD-PCBOMemory ICs Products | SAMSUNG | SLC NAND Flash Parallel 3.3V 256M-bit 32M x 8 15us 48-Pin TSOP-I | 311 | - | |
KAP21WP00B-DNLLMemory ICs Products | SAMSUNG | eMCP eMMC + DRam | 14095 | - | |
K7R323684C-FC25Memory ICs Products | SAMSUNG | Standard SRAM, 1MX36, 0.45ns, CMOS, PBGA165, | 재고 | - | |
KMVIS000LM-B503000Memory ICs Products | SAMSUNG | eMCP 16GB eMMC + DRam | 재고 | - | |
KA100O015M-B3TTMemory ICs Products | SAMSUNG | eMCP eMMC + DRam | 재고 | - | |
KLM2G1HE3F-B001Memory ICs Products | SAMSUNG | Managed Nand Flash Memory Solution Supports Mobile Applications | 272 | - |