양극성 RF 트랜지스터는 무선 주파수와 관련된 장비에서 신호를 전환하거나 증폭하는 데 사용되는 3개의 단자가 있는 반도체 장치입니다. 바이폴라 접합 트랜지스터는 NPN 또는 PNP로 설계되었으며 트랜지스터 유형, 컬렉터-에미터 항복 전압, 전이 주파수, 잡음 지수, 이득, 전력, DC 전류 이득 및 컬렉터 전류의 특성을 갖습니다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
BFP640FE6327Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 4.5V 40GHZ 4TSFP | 재고 | - | |
BFS483H6327XTSA1Bipolar RF Transistors | Infineon Technologies | RF TRANS 2 NPN 12V 8GHZ SOT363-6 | 9085 | - | |
BFS17WH6393XTSA1Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN SOT323-3 | 재고 | - | |
BF517E6327HTSA1Bipolar RF Transistors | Infineon Technologies | TRANS NPN 15V 0.025A SOT23 | 2315 | - | |
BFS 17P E6433Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 15V 1.4GHZ SOT23-3 | 재고 | - | |
BFP620H7764XTSA1Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 2.8V 65GHZ SOT343-4 | 1717 | - | |
BGR405H6327XTSA1Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 5V SOT343-4 | 재고 | - | |
BFR193WH6327XTSA1Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 12V 8GHZ SOT323-3 | 3308 | - | |
BFS17PE6327HTSA1Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 15V 1.4GHZ SOT23-3 | 590249 | - | |
BFP650Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 4.5V 37GHZ SOT343-4 | 33001 | - | |
BFT92E6327Bipolar RF Transistors | Infineon Technologies | RF TRANS PNP 15V 5GHZ SOT23-3 | 11019 | - | |
BFP640H6327XTSA1Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 4.5V 40GHZ SOT343-4 | 45653 | - | |
BFR 93AW E6327Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 12V 6GHZ SOT323-3 | 재고 | - | |
BFP 405 H6433Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 5V 25GHZ SOT343 | 재고 | - | |
BFS17WH6327XTSA1Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 15V 1.4GHZ SOT323-3 | 597001 | - | |
BFR93AE6327HTSA1Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 12V 6GHZ SOT23-3 | 30120 | - | |
BFR 193W E6327Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 12V 8GHZ SOT323-3 | 재고 | - | |
BFS481H6327XTSA1Bipolar RF Transistors | Infineon Technologies | RF TRANS 2 NPN 12V 8GHZ SOT363-6 | 6000 | - | |
BFP420E6327BTSA1Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 5V 25GHZ SOT343-4 | 3009 | - | |
BFG 196 E6327Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 12V 7.5GHZ SOT223-4 | 재고 | - | |
BFP 183W H6327Bipolar RF Transistors | Infineon Technologies | Trans RF BJT NPN 12V 0.065A 450mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-343 T/R | 9993 | - | |
BFP 840FESD H6327Bipolar RF Transistors | Infineon Technologies | Trans RF BJT 2.25V 0.035A 75mW 4-Pin TSFP Automotive AEC-Q101 | 1996 | - | |
BFP196WE6327Bipolar RF Transistors | Infineon Technologies | Trans RF BJT NPN 12V 0.15A 700mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-343 T/R | 재고 | - | |
BFP420E6327Bipolar RF Transistors | Infineon Technologies | Trans RF BJT NPN 4.5V 0.06A 210mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-343 T/R | 재고 | - | |
BFR 92P E6327Bipolar RF Transistors | Infineon Technologies | Trans RF BJT NPN 15V 0.045A 280mW Automotive AEC-Q101 3-Pin SOT-23 T/R | 189229 | - |