양극성 RF 트랜지스터는 무선 주파수와 관련된 장비에서 신호를 전환하거나 증폭하는 데 사용되는 3개의 단자가 있는 반도체 장치입니다. 바이폴라 접합 트랜지스터는 NPN 또는 PNP로 설계되었으며 트랜지스터 유형, 컬렉터-에미터 항복 전압, 전이 주파수, 잡음 지수, 이득, 전력, DC 전류 이득 및 컬렉터 전류의 특성을 갖습니다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
BFR 949T E6327Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 10V 9GHZ SC75 | 재고 | - | |
BFP 420F E6327Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 5V 25GHZ 4TSFP | 재고 | - | |
BFR460L3E6327XTMA1Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 5.8V 22GHZ TSLP-3-1 | 11252 | - | |
BFP405E6327BTSA1Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 5V 25GHZ SOT343-4 | 6761 | - | |
BFS 483 E6327Bipolar RF Transistors | Infineon Technologies | RF TRANS 2 NPN 12V 8GHZ SOT363-6 | 재고 | - | |
BFY181PZZZA1Bipolar RF Transistors | Infineon Technologies | Trans RF BJT NPN 12V 0.02A 175mW 4-Pin Micro-X Box | 재고 | - | |
BFY181ESZZZA1Bipolar RF Transistors | Infineon Technologies | Trans RF BJT NPN 12V 0.02A 175mW 4-Pin Micro-X Box | 재고 | - | |
BFY193CPZZZA1Bipolar RF Transistors | Infineon Technologies | Trans RF BJT NPN 12V 0.08A 580mW 4-Pin Micro-X1 Box | 재고 | - | |
BFY450PZZZA1Bipolar RF Transistors | Infineon Technologies | Trans RF BJT NPN 4.5V 0.1A 450mW 4-Pin Micro-X | 재고 | - | |
BFY450ESZZZA1Bipolar RF Transistors | Infineon Technologies | Trans RF BJT NPN 4.5V 0.1A 450mW 4-Pin Micro-X Box | 재고 | - | |
BFY64004PZZZA1Bipolar RF Transistors | Infineon Technologies | Silicon RF Bipolar Transistor | 재고 | - | |
BFP 740 E6327Bipolar RF Transistors | Infineon Technologies | Trans RF BJT NPN 4V 0.045A 160mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-343 T/R | 3010 | - | |
BFP 650 H6327Bipolar RF Transistors | Infineon Technologies | Trans RF BJT NPN 4V 0.15A 500mW 4-Pin(3+Tab) SOT-343 T/R Automotive AEC-Q101 | 3564 | - | |
BFR181E6327Bipolar RF Transistors | Infineon Technologies | Trans RF BJT NPN 12V 0.02A 175mW Automotive 3-Pin SOT-23 T/R | 3009 | - | |
BFR181WE6327Bipolar RF Transistors | Infineon Technologies | Trans RF BJT NPN 15V 0.03A 280mW 3-Pin SOT-323 T/R | 1518 | - | |
BFR380TE6327Bipolar RF Transistors | Infineon Technologies | TRANSISTOR RF NPN 6V SC-75 | 재고 | - | |
BFP540Bipolar RF Transistors | Infineon Technologies | RF SMALL SIGNAL BIPOLAR TRANSIST / RF Transistor | 12206 | - | |
BFP640H6327Bipolar RF Transistors | Infineon Technologies | NPN Silicon Germanium RF Transistor | 12015 | - | |
BFR35APE6327Bipolar RF Transistors | Infineon Technologies | TRANSISTOR RF NPN 15V SOT-23 | 8179 | - | |
BFP183Bipolar RF Transistors | Infineon Technologies | BFP183 - LOW-NOISE SI TRANSISTOR / RF Transistor | 85107 | - | |
BFP650H6327Bipolar RF Transistors | Infineon Technologies | High Linearity Silicon Germanium Bipolar RF Transistor | 189019 | - | |
BFR106E6327Bipolar RF Transistors | Infineon Technologies | Trans RF BJT NPN 16V 0.21A 700mW Automotive 3-Pin SOT-23 T/R | 32014 | - | |
BFR35APBipolar RF Transistors | Infineon Technologies | BFR35 - LOW-NOISE SI TRANSISTORS / RF Transistor | 6163 | - | |
BFP182WE6327Bipolar RF Transistors | Infineon Technologies | RF TRANSISTOR, L BAND, NPN | 재고 | - | |
BFP760H6327Bipolar RF Transistors | Infineon Technologies | 250309 | - |