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양극성 RF 트랜지스터
(482 결과)양극성 RF 트랜지스터는 무선 주파수와 관련된 장비에서 신호를 전환하거나 증폭하는 데 사용되는 3개의 단자가 있는 반도체 장치입니다. 바이폴라 접합 트랜지스터는 NPN 또는 PNP로 설계되었으며 트랜지스터 유형, 컬렉터-에미터 항복 전압, 전이 주파수, 잡음 지수, 이득, 전력, DC 전류 이득 및 컬렉터 전류의 특성을 갖습니다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
 BFR182W E6327Bipolar RF Transistors | Infineon Technologies | Trans RF BJT NPN 12V 0.035A 250mW Automotive 3-Pin SOT-323 T/R | 재고 | - | |
 BF752E6327Bipolar RF Transistors | Infineon Technologies | 재고 | - | ||
 BF799 E6327Bipolar RF Transistors | Infineon Technologies | Trans RF BJT NPN 20V 0.035A 280mW 3-Pin SOT-23 T/R | 재고 | - | |
 BFP183E7764Bipolar RF Transistors | Infineon Technologies | Trans RF BJT NPN 12V 0.065A 250mW Automotive 4-Pin SOT-143 T/R | 21006 | - | |
 BFW92WBipolar RF Transistors | Infineon Technologies | 재고 | - | ||
 BFP182E7764Bipolar RF Transistors | Infineon Technologies | Trans RF BJT NPN 12V 0.035A 250mW Automotive 4-Pin SOT-143 T/R | 3208 | - | |
 BFR93AW E6587Bipolar RF Transistors | Infineon Technologies | 재고 | - | ||
 BFP181RE7764Bipolar RF Transistors | Infineon Technologies | 재고 | - | ||
 BFR193E6327Bipolar RF Transistors | Infineon Technologies | NPN Bipolar RF Transistor / Trans RF BJT NPN 12V 0.08A 580mW Automotive 3-Pin SOT-23 T/R | 57389 | - | |
 BFG19S E6327Bipolar RF Transistors | Infineon Technologies | TRANSISTOR RF NPN 15V SOT-223 | 6007 | - | |
 BFP760Bipolar RF Transistors | Infineon Technologies | Low Noise Silicon Germanium Bipolar RF Transistor | 250216 | - | |
 BCX 56-16 E6433Bipolar RF Transistors | Infineon Technologies | Trans GP BJT NPN 80V 1A 4-Pin(3+Tab) SOT-89 T/R | 재고 | - | |
 BFP650FE6327Bipolar RF Transistors | Infineon Technologies | 68413 | - | ||
 BFP640ESDBipolar RF Transistors | Infineon Technologies | Robust High Performance Low Noise Bipolar RF Transistor | 3511 | - | |
 BFP840FESD H6327Bipolar RF Transistors | Infineon Technologies | 2986 | - | ||
 BFS17WH6327Bipolar RF Transistors | Infineon Technologies | 6001 | - | ||
BFR92PE6530Bipolar RF Transistors | Infineon Technologies | RF LOW-NOISE SI TRANSISTOR / RF Transistor | 재고 | - | |
 BFQ790 H6327Bipolar RF Transistors | Infineon Technologies | 94414 | - | ||
 BFQ19S H6327Bipolar RF Transistors | Infineon Technologies | 2532 | - | ||
 BFP620FE7764Bipolar RF Transistors | Infineon Technologies | NPN Silicon Germanium RF Transistor | 3358 | - | |
 BFP193W H6327Bipolar RF Transistors | Infineon Technologies | 2981 | - | ||
 BFP 405 E6433Bipolar RF Transistors | Infineon Technologies | Transistor Rf NPN 4.5V SOT-343 | 재고 | - | |
 BGB540Bipolar RF Transistors | Infineon Technologies | A 35 dB Gain-Sloped LNB I.F. Amplifier for Direct Broadcast Satellite Television Applications using the BGA430 & BGB540 Silicon MMICs | 재고 | - | |
 BFP650E6327Bipolar RF Transistors | Infineon Technologies | NPN Silicon Germanium RF Transistor | 10338 | - | |
 BCR 116 E6393Bipolar RF Transistors | Infineon Technologies | Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R | 재고 | - |
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