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양극성 RF 트랜지스터
(482 결과)양극성 RF 트랜지스터는 무선 주파수와 관련된 장비에서 신호를 전환하거나 증폭하는 데 사용되는 3개의 단자가 있는 반도체 장치입니다. 바이폴라 접합 트랜지스터는 NPN 또는 PNP로 설계되었으며 트랜지스터 유형, 컬렉터-에미터 항복 전압, 전이 주파수, 잡음 지수, 이득, 전력, DC 전류 이득 및 컬렉터 전류의 특성을 갖습니다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
 BGR420 H6327Bipolar RF Transistors | Infineon Technologies | TRANS RF NPN 13V 25MA SOT343 | 12020 | - | |
 BFR183 E6327Bipolar RF Transistors | Infineon Technologies | Trans RF BJT NPN 12V 0.065A 450mW Automotive 3-Pin SOT-23 T/R | 114001 | - | |
 BFR750L3RH E6327Bipolar RF Transistors | Infineon Technologies | Trans RF BJT NPN 4V 0.09A 360mW Automotive 3-Pin TSLP | 26110 | - | |
 BF776Bipolar RF Transistors | Infineon Technologies | TRANS RF NPN 1.8GHZ 4.0V SOT343 | 154319 | - | |
 BFR949T E6327Bipolar RF Transistors | Infineon Technologies | TRANSISTOR RF BIP SC-75 | 6013 | - | |
 BFR280WBipolar RF Transistors | Infineon Technologies | Trans RF BJT NPN 8V 0.01A | 2306 | - | |
 BF772E-7764Bipolar RF Transistors | Infineon Technologies | Trans RF BJT NPN 12V 0.08A 580mW 4-Pin SOT-143 T/R | 재고 | - | |
 BF799WE6327BTSA1Bipolar RF Transistors | Infineon Technologies | TRANSISTOR NPN RF 20V SOT-323 | 재고 | - | |
 BF772RE7823Bipolar RF Transistors | Infineon Technologies | 115120 | - | ||
 BFR183TBipolar RF Transistors | Infineon Technologies | TRANSISTOR RF NPN 12V SC-75 | 20706 | - | |
 BFP181E7764Bipolar RF Transistors | Infineon Technologies | Trans RF BJT NPN 12V 0.02A 175mW Automotive 4-Pin SOT-143 T/R | 134518 | - | |
 BF772Bipolar RF Transistors | Infineon Technologies | Trans RF BJT NPN 12V 0.08A 580mW 4-Pin SOT-143 | 1810 | - | |
 BFP320WE6700Bipolar RF Transistors | Infineon Technologies | 2184 | - | ||
 BFS17SE6327Bipolar RF Transistors | Infineon Technologies | Trans RF BJT NPN 15V 0.025A 6-Pin SOT-363 Reel | 102705 | - | |
 BFR460L3Bipolar RF Transistors | Infineon Technologies | NPN Silicon RF Transistor | 32317 | - | |
 BFG135AE6327Bipolar RF Transistors | Infineon Technologies | 재고 | - | ||
 BFP840ESDBipolar RF Transistors | Infineon Technologies | Robust Low Noise Silicon Germanium Bipolar RF Transistor | 3404 | - | |
 BFP620FH7764Bipolar RF Transistors | Infineon Technologies | NPN Silicon Germanium RF Transistor | 54009 | - | |
 BFP640ESD H6327Bipolar RF Transistors | Infineon Technologies | 44505 | - | ||
 BFR380L3E6327Bipolar RF Transistors | Infineon Technologies | 12308 | - | ||
 BFP182E7765Bipolar RF Transistors | Infineon Technologies | 재고 | - | ||
 BFP183WH6327Bipolar RF Transistors | Infineon Technologies | RF TRANSISTOR, L BAND, NPN | 9003 | - | |
 BCP 56-10 E6327Bipolar RF Transistors | Infineon Technologies | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon | 재고 | - | |
 BFR93AW H6327Bipolar RF Transistors | Infineon Technologies | 189018 | - | ||
 BFP460E6327Bipolar RF Transistors | Infineon Technologies | 재고 | - |
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