RF 트랜지스터, FET 및 MOSFET은 장치를 통해 흐르는 전류가 전기장에 의해 제어되는 3개의 단자가 있는 반도체 장치입니다. 이 제품군의 장치는 무선 주파수와 관련된 장비에 사용되도록 설계되었습니다. 신호나 전력을 증폭하거나 스위칭하는 트랜지스터 종류로는 E-pHEMT, LDMOS, MESFET, N채널, P채널, pHEMT, 탄화규소, 2N채널, 4N채널 등이 있다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
ATF-54143-BLKGRF FETs, MOSFETs | Broadcom | GaAs RF FET, C Band, 2GHz, 16.6dB, 0.5dB NF, SOT-343 | 27076 | - | |
ATF-331M4-BLKRF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, 1.40 X 1.20 MM, 0.70 MM HEIGHT, MINIPAK-4 | 재고 | - | |
ATF-34143-BLKGRF FETs, MOSFETs | Broadcom | RF FET, GaAs, N-Ch, 2GHz, 17.5dB Gain, 0.5dB NF, SOT-343 | 127 | - | |
ATF-511P8-BLKRF FETs, MOSFETs | Broadcom | RF FET, 6GHz, 7V, 1A, 1.4dB NF, 14.8dB Gain, SMT | 3978 | - | |
ATF-52189-BLKRF FETs, MOSFETs | Broadcom | RF FET, GaAs, 2GHz, 16dB Gain, 1.5dB NF, SOT-89 | 8001 | - | |
ATF-521P8-BLKRF FETs, MOSFETs | Broadcom | RF FET, 2GHz, 17dB Gain, 1.5dB NF, 7V Vdss, 500mA ID, GaAs, LPCC-8 | 2958 | - | |
ATF-53189-BLKRF FETs, MOSFETs | Broadcom | RF FET, GaAs, 6GHz, SOT-89, 17.2dB Gain, 0.8dB NF | 3773 | - | |
ATF-58143-BLKGRF FETs, MOSFETs | Broadcom | GaAs RF FET, 2GHz, 5V, 100mA, SOT-343 | 34001 | - | |
ATF-36077-STRRF FETs, MOSFETs | Broadcom | GaAs RF FET, 12GHz, 0.5dB NF, 45mA ID, 3V Vdss, SMD | 6402 | - | |
ATF-36163-BLKGRF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 6 PIN | 재고 | - | |
ATF-35143-BLKGRF FETs, MOSFETs | Broadcom | RF FET, 2GHz, 18dB Gain, 0.4dB NF, SOT-343, N-Channel | 1506 | - | |
ATF-38143-TR2GRF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 4 PIN | 재고 | - | |
ATF-36163-TR2GRF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 6 PIN | 24168 | - | |
ATF-35143-TR2GRF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 4 PIN | 재고 | - | |
ATF-58143-TR2GRF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 4 PIN | 재고 | - | |
ATF-541M4-TR2RF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, 1.40 X 1.20 MM, 0.70 MM HEIGHT, LEAD FREE, LEADLESS, MINIPAK-4 | 재고 | - | |
ATF-54143-TR2GRF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 4 PIN | 재고 | - | |
ATF-53189-TR2RF FETs, MOSFETs | Broadcom | RF JFET Transistors Transistor GaAs Hi gh Linearity | 재고 | - | |
ATF-551M4-TR2RF FETs, MOSFETs | Broadcom | Trans JFET N-CH 5V 100mA GaAs pHEMT 4-Pin Mini-PAK T/R | 재고 | - | |
ATF-55143-TR2GRF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 4 PIN | 재고 | - | |
ATF-34143-TR2GRF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 4 PIN | 재고 | - | |
ATF-38143-TR1GRF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 4 PIN | 재고 | - | |
ATF-58143-TR1GRF FETs, MOSFETs | Broadcom | GaAs RF FET Transistor, 2GHz, 5V, 100mA, 0.5dB NF, SOT-343 | 33308 | - | |
ATF-50189-BLKRF FETs, MOSFETs | Broadcom | RF FET, C Band, 2GHz, 1.1dB NF, 15.5dB Gain, SOT-89 | 재고 | - | |
ATF-55143-BLKGRF FETs, MOSFETs | Broadcom | RF FET, C Band, 2GHz, 0.6dB NF, 17.7dB Gain, 5V, SOT-343 | 45918 | - |