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RF FET, MOSFET
(72 결과)RF 트랜지스터, FET 및 MOSFET은 장치를 통해 흐르는 전류가 전기장에 의해 제어되는 3개의 단자가 있는 반도체 장치입니다. 이 제품군의 장치는 무선 주파수와 관련된 장비에 사용되도록 설계되었습니다. 신호나 전력을 증폭하거나 스위칭하는 트랜지스터 종류로는 E-pHEMT, LDMOS, MESFET, N채널, P채널, pHEMT, 탄화규소, 2N채널, 4N채널 등이 있다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
 ATF-34143-TR1RF FETs, MOSFETs | Broadcom | Trans FET N-CH 5.5V 145mA pHEMT 4-Pin(3+Tab) SOT-343 T/R | 6849 | - | |
ATF-54143-TR1RF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, PLASTIC, SC-70, 4 PIN | 27903 | - | |
ATF-55143-TR1RF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, PLASTIC, SC-70, 4 PIN | 재고 | - | |
 ATF-551M4-TR1RF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, 1.40 MM X 1.20 MM, 0.70 MM HEIGHT, MINIATURE, LEADLESS PACKAGE-4 | 4507 | - | |
 VMMK-1218-BLKGRF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, 1 X 0.50 MM, 0.25 MM HEIGHT, ROHS COMPLIANT, LEADLESS, ULTRA THIN, MINIATURE PACKAGE-3 | 816 | - | |
 VMMK-1218-TR1GRF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, 1 X 0.50 MM, 0.25 MM HEIGHT, ROHS COMPLIANT, LEADLESS, ULTRA THIN, MINIATURE PACKAGE-3 | 808 | - | |
 VMMK-1225-BLKGRF FETs, MOSFETs | Broadcom | RF FET, GaAs, 12GHz, 5V, 1dB NF, 11dB Gain, SMD | 4227 | - | |
VMMK-1225-TR1GRF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, ROHS COMPLIANT, 1.05 X 0.55MM, 0.25MM HEIGHT, SUBMINIATURE, LEADLESS PACKAGE-3 | 재고 | - | |
 VMMK-1225-TR2GRF FETs, MOSFETs | Broadcom | RF MOSFET E-PHEMT 2V 0402 | 재고 | - | |
 ATF-50189-BLKRF FETs, MOSFETs | Broadcom | RF FET, C Band, 2GHz, 1.1dB NF, 15.5dB Gain, SOT-89 | 재고 | - | |
 ATF-55143-BLKGRF FETs, MOSFETs | Broadcom | RF FET, C Band, 2GHz, 0.6dB NF, 17.7dB Gain, 5V, SOT-343 | 45918 | - | |
 ATF-531P8-TR1GRF FETs, MOSFETs | Broadcom | 3402 | - | ||
 ATF-35076-TR1RF FETs, MOSFETs | Broadcom | 1023 | - | ||
 ATF-521P8-TR1GRF FETs, MOSFETs | Broadcom | 재고 | - | ||
 ATF-52189-TR1GRF FETs, MOSFETs | Broadcom | RF High Linearity Mode Enhancement HEMT in SOT 89 Package | 8296 | - | |
 ATF-35376-TR1RF FETs, MOSFETs | Broadcom | 재고 | - | ||
 ATF-501P8-TR1GRF FETs, MOSFETs | Broadcom | 7002 | - | ||
 ATF-521P8-TR2RF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT,LEAD FREE, PLASTIC,LPCC-8 | 21713 | - | |
 ATF-33143-TR1RF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, PLASTIC, SC-70, 4 PIN | 8523 | - | |
 ATF-34143-BLKRF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, PLASTIC, SC-70, 4 PIN | 408 | - | |
 ATF-511P8-TR1GRF FETs, MOSFETs | Broadcom | 7101 | - | ||
 ATF-53189-TR1GRF FETs, MOSFETs | Broadcom | Trans RF FET 7V 0.3A 4-Pin(3+Tab) SOT-89 T/R | 10817 | - |
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