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RF FET, MOSFET
(72 결과)RF 트랜지스터, FET 및 MOSFET은 장치를 통해 흐르는 전류가 전기장에 의해 제어되는 3개의 단자가 있는 반도체 장치입니다. 이 제품군의 장치는 무선 주파수와 관련된 장비에 사용되도록 설계되었습니다. 신호나 전력을 증폭하거나 스위칭하는 트랜지스터 종류로는 E-pHEMT, LDMOS, MESFET, N채널, P채널, pHEMT, 탄화규소, 2N채널, 4N채널 등이 있다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
 ATF-34143-TR1RF FETs, MOSFETs | Broadcom | Trans FET N-CH 5.5V 145mA pHEMT 4-Pin(3+Tab) SOT-343 T/R | 6849 | - | |
ATF-54143-TR1RF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, PLASTIC, SC-70, 4 PIN | 27903 | - | |
ATF-55143-TR1RF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, PLASTIC, SC-70, 4 PIN | 재고 | - | |
 ATF-551M4-TR1RF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, 1.40 MM X 1.20 MM, 0.70 MM HEIGHT, MINIATURE, LEADLESS PACKAGE-4 | 4507 | - | |
ATF-33143-BLKGRF FETs, MOSFETs | Broadcom | GaAs RF FET, 2GHz, 5.5V, 305mA, 0.5dB NF, SOT-343 | 재고 | - | |
ATF-38143-BLKGRF FETs, MOSFETs | Broadcom | GaAs RF FET, 2GHz, 16dB Gain, 0.4dB NF, SOT-343 | 재고 | - | |
ATF-551M4-BLKRF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, 1.40 MM X 1.20 MM, 0.70 MM HEIGHT, MINIATURE, LEADLESS PACKAGE-4 | 1818 | - | |
ATF-33143-TR2GRF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 4 PIN | 재고 | - | |
 ATF-531P8-TR2RF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, PLASTIC, DFP-N, LCC-8 | 재고 | - | |
 ATF-52189-TR2RF FETs, MOSFETs | Broadcom | RF JFET Transistors Transistor GaAs Hi gh Linearity | 재고 | - | |
ATF-501P8-TR2RF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT,LEAD FREE, PLASTIC,LPCC-8 | 재고 | - | |
ATF-50189-TR2RF FETs, MOSFETs | Broadcom | RF MOSFET E-PHEMT 4.5V SOT89 | 재고 | - | |
 ATF-36163-TR1GRF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 6 PIN | 24790 | - | |
ATF-36077-TR1RF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, CERAMIC, MICROSTRIP PACKAGE-4 | 재고 | - | |
ATF-53189-TR1RF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, LEAD FREE PACKAGE-3 | 21064 | - | |
 ATF-531P8-TR1RF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, PLASTIC, DFP-N, LCC-8 | 3388 | - | |
ATF-541M4-TR1RF FETs, MOSFETs | Broadcom | 2GHz RF FET, N-Channel, 120mA ID, 5V Vdss, 0.5dB NF, GaAs, SMT | 64 | - | |
ATF-331M4-TR1RF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, 1.40 X 1.20 MM, 0.70 MM HEIGHT, MINIPAK-4 | 3013 | - | |
ATF-35143-TR1GRF FETs, MOSFETs | Broadcom | Trans FET N-CH 5.5V 80mA pHEMT 4-Pin(3+Tab) SOT-343 T/R | 13691 | - | |
ATF-50189-TR1RF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, LEAD FREE PACKAGE-3 | 2550 | - | |
ATF-33143-TR1GRF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 4 PIN | 8408 | - | |
ATF-501P8-TR1RF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT,LEAD FREE, PLASTIC,LPCC-8 | 재고 | - | |
 ATF-511P8-TR1RF FETs, MOSFETs | Broadcom | RF Power Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8 | 7685 | - | |
ATF-52189-TR1RF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, LEAD FREE PACKAGE-3 | 8293 | - | |
ATF-521P8-TR1RF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT,LEAD FREE, PLASTIC,LPCC-8 | 3003 | - |
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