메모리는 집적 회로에서 데이터 저장 장치로 사용되는 반도체 장치입니다. 이러한 장치는 비휘발성 또는 휘발성의 CBRAM, DRAM, EEPROM, EERAM, EPROM, 플래시, FRAM, NVSRAM, PCM(PRAM), PSRAM, RAM 및 SRAM의 여러 형식으로 제공됩니다. 이 장치의 메모리 크기는 64b ~ 6Tb이며 인터페이스는 I2C, MMC, 병렬, eMMC, 직렬, 단일 와이어, SPI, UFS, Xccela 버스 및 1-Wire입니다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
K4S283233E-DN1LMemory ICs Products | SAMSUNG | 재고 | - | ||
K4T1G084QE-HCF8Memory ICs Products | SAMSUNG | DDR DRAM, 128MX8, 0.35ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 | 3071 | - | |
K4X2G323PC-8GD8Memory ICs Products | SAMSUNG | 29010 | - | ||
K5D1257ACC-D090Memory ICs Products | SAMSUNG | 재고 | - | ||
K3QF1F10DM-BGCFMemory ICs Products | SAMSUNG | 1295 | - | ||
K4X51163PG-FGC6Memory ICs Products | SAMSUNG | 7781 | - | ||
K4S641632K-UI75Memory ICs Products | SAMSUNG | 961 | - | ||
K4S161622D-TC60Memory ICs Products | SAMSUNG | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | 7008 | - | |
K4M51163PEMemory ICs Products | SAMSUNG | 7012 | - | ||
K6R1008V1C-TC12Memory ICs Products | SAMSUNG | SRAM Chip Async Single 3.3V 1M-Bit 128K x 8 12ns 32-Pin TSOP-II | 8017 | - | |
K6R1008C1C-JC15Memory ICs Products | SAMSUNG | Standard SRAM, 128KX8, 15ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 | 9008 | - | |
K4J10324QD-HC12Memory ICs Products | SAMSUNG | DDR DRAM, 32MX32, 0.23ns, CMOS, PBGA136 | 11914 | - | |
K511H12ACM-B075Memory ICs Products | SAMSUNG | 2922 | - | ||
K4J52324QE-BJ1AMemory ICs Products | SAMSUNG | 4014 | - | ||
K4M561633G-BN75Memory ICs Products | SAMSUNG | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, FBGA-54 | 52807 | - | |
K4F151611D-JC60Memory ICs Products | SAMSUNG | Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, SOJ-42 | 재고 | - | |
K4B1G1646G-BCMAMemory ICs Products | SAMSUNG | DDR DRAM, 64MX16, 0.195ns, CMOS, PBGA96 | 16602 | - | |
K4N51163QE-ZC20Memory ICs Products | SAMSUNG | 재고 | - | ||
K4S561632H-UC75Memory ICs Products | SAMSUNG | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 | 1794 | - | |
K4T1G1640Q-HCE6Memory ICs Products | SAMSUNG | 재고 | - | ||
K4M641633K-RN75Memory ICs Products | SAMSUNG | 재고 | - | ||
K4H561638F-GCCCMemory ICs Products | SAMSUNG | DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 60-Pin FBGA | 재고 | - | |
K9F2808UOC-YCBOMemory ICs Products | SAMSUNG | 11820 | - | ||
K4A8G165WV-BCRCMemory ICs Products | SAMSUNG | DDR4-2400 512Mx16 (8Gb) | 재고 | - | |
K9GBG08U0A-SCB0Memory ICs Products | SAMSUNG | 3002 | - |