메모리 IC 제품

(3884 결과)

메모리는 집적 회로에서 데이터 저장 장치로 사용되는 반도체 장치입니다. 이러한 장치는 비휘발성 또는 휘발성의 CBRAM, DRAM, EEPROM, EERAM, EPROM, 플래시, FRAM, NVSRAM, PCM(PRAM), PSRAM, RAM 및 SRAM의 여러 형식으로 제공됩니다. 이 장치의 메모리 크기는 64b ~ 6Tb이며 인터페이스는 I2C, MMC, 병렬, eMMC, 직렬, 단일 와이어, SPI, UFS, Xccela 버스 및 1-Wire입니다.

부분 # 제조업체 설명 유효성 가격 수량
SAMSUNG_K4S283233E-DN1L

K4S283233E-DN1L

Memory ICs Products
SAMSUNG
재고
-
SAMSUNG_K4T1G084QE-HCF8

K4T1G084QE-HCF8

Memory ICs Products
SAMSUNG DDR DRAM, 128MX8, 0.35ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60
3071
-
SAMSUNG_K4X2G323PC-8GD8

K4X2G323PC-8GD8

Memory ICs Products
SAMSUNG
29010
-
SAMSUNG_K5D1257ACC-D090

K5D1257ACC-D090

Memory ICs Products
SAMSUNG
재고
-
SAMSUNG_K3QF1F10DM-BGCF

K3QF1F10DM-BGCF

Memory ICs Products
SAMSUNG
1295
-
SAMSUNG_K4X51163PG-FGC6

K4X51163PG-FGC6

Memory ICs Products
SAMSUNG
7781
-
SAMSUNG_K4S641632K-UI75

K4S641632K-UI75

Memory ICs Products
SAMSUNG
961
-
SAMSUNG_K4S161622D-TC60

K4S161622D-TC60

Memory ICs Products
SAMSUNG Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50
7008
-
SAMSUNG_K4M51163PE

K4M51163PE

Memory ICs Products
SAMSUNG
7012
-
SAMSUNG_K6R1008V1C-TC12

K6R1008V1C-TC12

Memory ICs Products
SAMSUNG SRAM Chip Async Single 3.3V 1M-Bit 128K x 8 12ns 32-Pin TSOP-II
8017
-
SAMSUNG_K6R1008C1C-JC15

K6R1008C1C-JC15

Memory ICs Products
SAMSUNG Standard SRAM, 128KX8, 15ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
9008
-
SAMSUNG_K4J10324QD-HC12

K4J10324QD-HC12

Memory ICs Products
SAMSUNG DDR DRAM, 32MX32, 0.23ns, CMOS, PBGA136
11914
-
SAMSUNG_K511H12ACM-B075

K511H12ACM-B075

Memory ICs Products
SAMSUNG
2922
-
SAMSUNG_K4J52324QE-BJ1A

K4J52324QE-BJ1A

Memory ICs Products
SAMSUNG
4014
-
SAMSUNG_K4M561633G-BN75

K4M561633G-BN75

Memory ICs Products
SAMSUNG Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, FBGA-54
52807
-
SAMSUNG_K4F151611D-JC60

K4F151611D-JC60

Memory ICs Products
SAMSUNG Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, SOJ-42
재고
-
SAMSUNG_K4B1G1646G-BCMA

K4B1G1646G-BCMA

Memory ICs Products
SAMSUNG DDR DRAM, 64MX16, 0.195ns, CMOS, PBGA96
16602
-
SAMSUNG_K4N51163QE-ZC20

K4N51163QE-ZC20

Memory ICs Products
SAMSUNG
재고
-
SAMSUNG_K4S561632H-UC75

K4S561632H-UC75

Memory ICs Products
SAMSUNG Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54
1794
-
SAMSUNG_K4T1G1640Q-HCE6

K4T1G1640Q-HCE6

Memory ICs Products
SAMSUNG
재고
-
SAMSUNG_K4M641633K-RN75

K4M641633K-RN75

Memory ICs Products
SAMSUNG
재고
-
SAMSUNG_K4H561638F-GCCC

K4H561638F-GCCC

Memory ICs Products
SAMSUNG DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 60-Pin FBGA
재고
-
SAMSUNG_K9F2808UOC-YCBO

K9F2808UOC-YCBO

Memory ICs Products
SAMSUNG
11820
-
SAMSUNG_K4A8G165WV-BCRC

K4A8G165WV-BCRC

Memory ICs Products
SAMSUNG DDR4-2400 512Mx16 (8Gb)
재고
-
SAMSUNG_K9GBG08U0A-SCB0

K9GBG08U0A-SCB0

Memory ICs Products
SAMSUNG
3002
-