RF 트랜지스터, FET 및 MOSFET은 장치를 통해 흐르는 전류가 전기장에 의해 제어되는 3개의 단자가 있는 반도체 장치입니다. 이 제품군의 장치는 무선 주파수와 관련된 장비에 사용되도록 설계되었습니다. 신호나 전력을 증폭하거나 스위칭하는 트랜지스터 종류로는 E-pHEMT, LDMOS, MESFET, N채널, P채널, pHEMT, 탄화규소, 2N채널, 4N채널 등이 있다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
PTVA127002EVV1R0XTMA1RF FETs, MOSFETs | Infineon Technologies | RF MOSFET LDMOS 50V H-36275-4 | 20 | - | |
PTFA071701EV4XWSA1RF FETs, MOSFETs | Infineon Technologies | RF MOSFET LDMOS 30V H-36248-2 | 재고 | - | |
PTF080101M V1RF FETs, MOSFETs | Infineon Technologies | RF MOSFET LDMOS 28V RFP-10 | 691 | - | |
PXFC193808SVV1R250XTMA1RF FETs, MOSFETs | Infineon Technologies | RF MOSFET LDMOS H-37275G-6 | 재고 | - | |
PTFA191001EV4R250XTMA1RF FETs, MOSFETs | Infineon Technologies | RF MOSFET LDMOS 30V H-36248-2 | 재고 | - | |
PTFA191001EV4XWSA1RF FETs, MOSFETs | Infineon Technologies | RF MOSFET LDMOS 30V H-36248-2 | 재고 | - | |
PTVA120251EAV2XWSA1RF FETs, MOSFETs | Infineon Technologies | RF MOSFET LDMOS H-36265-2 | 재고 | - | |
PTVA093002TCV1R250XUMA1RF FETs, MOSFETs | Infineon Technologies | RF MOSFET LDMOS 50V H-49248H-4 | 3708 | - | |
PTFA181001EV4XWSA1RF FETs, MOSFETs | Infineon Technologies | RF MOSFET LDMOS 28V H-36248-2 | 재고 | - | |
BF1005SE6327HTSA1RF FETs, MOSFETs | Infineon Technologies | RF MOSFET 5V SOT143 | 158309 | - | |
PTFA241301E V1RF FETs, MOSFETs | Infineon Technologies | RF MOSFET LDMOS 28V H-30260-2 | 재고 | - | |
PTFA212401E V4RF FETs, MOSFETs | Infineon Technologies | RF MOSFET LDMOS 30V H-36260-2 | 재고 | - | |
PTFB093608FVV2XWSA1RF FETs, MOSFETs | Infineon Technologies | RF MOSFET LDMOS | 재고 | - | |
PXAC261202FCV1XWSA1RF FETs, MOSFETs | Infineon Technologies | RF MOSFET LDMOS 28V H-37248-4 | 재고 | - | |
PTFB192557SHV1R250XTMA1RF FETs, MOSFETs | Infineon Technologies | RF MOSFET LDMOS 28V H-34288-4 | 재고 | - | |
PTFA210701EV4R250XTMA1RF FETs, MOSFETs | Infineon Technologies | RF MOSFET LDMOS 30V H-36265-2 | 재고 | - | |
PTF141501E V1RF FETs, MOSFETs | Infineon Technologies | RF MOSFET LDMOS 28V H-30260-2 | 재고 | - | |
PTFA210701EV4XWSA1RF FETs, MOSFETs | Infineon Technologies | RF MOSFET LDMOS 30V H-36265-2 | 재고 | - | |
PTFB191501EV1XWSA1RF FETs, MOSFETs | Infineon Technologies | RF MOSFET LDMOS 30V H-36248-2 | 재고 | - | |
BG3123RH6327XTSA1RF FETs, MOSFETs | Infineon Technologies | RF MOSFET 5V SOT363 | 재고 | - | |
PTFA210601EV4R250FTMA1RF FETs, MOSFETs | Infineon Technologies | RF MOSFET LDMOS 28V H-36265-2 | 재고 | - | |
PTFA212401E V4 R250RF FETs, MOSFETs | Infineon Technologies | RF MOSFET LDMOS 30V H-36260-2 | 재고 | - | |
PTF140451E V1RF FETs, MOSFETs | Infineon Technologies | RF MOSFET LDMOS 28V H-30265-2 | 96 | - | |
PTFA212001F/1 P4RF FETs, MOSFETs | Infineon Technologies | RF MOSFET LDMOS 30V H-37260-2 | 재고 | - | |
IPB47N10S-33RF FETs, MOSFETs | Infineon Technologies | SIPMOS Power-Transistor Feature N-Channel Enhancement mode | 1040 | - |