메모리는 집적 회로에서 데이터 저장 장치로 사용되는 반도체 장치입니다. 이러한 장치는 비휘발성 또는 휘발성의 CBRAM, DRAM, EEPROM, EERAM, EPROM, 플래시, FRAM, NVSRAM, PCM(PRAM), PSRAM, RAM 및 SRAM의 여러 형식으로 제공됩니다. 이 장치의 메모리 크기는 64b ~ 6Tb이며 인터페이스는 I2C, MMC, 병렬, eMMC, 직렬, 단일 와이어, SPI, UFS, Xccela 버스 및 1-Wire입니다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
BY25Q32BSSIG(R)Memory ICs Products | BYTe Semiconductor | 32 MBIT, 3.0V (2.7V TO 3.6V), -4 | 재고 | - | |
BY25Q40BSMIG(R)Memory ICs Products | BYTe Semiconductor | 4 MBIT, 3.0V (2.7V TO 3.6V), -40 | 32972 | - | |
BY25Q80AWUIG(R)Memory ICs Products | BYTe Semiconductor | 8 MBIT, WIDE VCC (1.7V TO 3.6V), | 재고 | - | |
BY25Q80AWTIG(R)Memory ICs Products | BYTe Semiconductor | 8 MBIT, WIDE VCC (1.7V TO 3.6V), | 4054 | - | |
BY25Q256FSSIG(R)Memory ICs Products | BYTe Semiconductor | 256 MBIT, 3.0V (2.7V TO 3.6V), - | 4372 | - | |
BY25D20ASTIG(T)Memory ICs Products | BYTe Semiconductor | 2 MBIT, 3.0V (2.7V TO 3.6V), -40 | 재고 | - | |
BY25Q16BSTIG(T)Memory ICs Products | BYTe Semiconductor | 16 MBIT, 3.0V (2.7V TO 3.6V), -4 | 10825 | - | |
BY25Q20AWUIG(R)Memory ICs Products | BYTe Semiconductor | 2MBIT, WIDE VCC (1.7V TO 3.6V), | 27321 | - | |
BY25Q32CSKIG(R)Memory ICs Products | BYTe Semiconductor | 32 MBIT, 3.0V (2.7V TO 3.6V), -4 | 재고 | - | |
BY25Q32BSSIG(T)Memory ICs Products | BYTe Semiconductor | 32 MBIT, 3.0V (2.7V TO 3.6V), -4 | 재고 | - | |
BY25Q64ASSIG(R)Memory ICs Products | BYTe Semiconductor | 64 MBIT, 3.0V (2.7V TO 3.6V), -4 | 재고 | - | |
BY25Q64ESTIG(R)Memory ICs Products | BYTe Semiconductor | 64 MBIT, 3.0V (2.7V TO 3.6V), -4 | 1471 | - | |
BY25Q64ESSIG(R)Memory ICs Products | BYTe Semiconductor | 64 MBIT, 3.0V (2.7V TO 3.6V), -4 | 3479 | - | |
BY25Q16BSSIG(R)Memory ICs Products | BYTe Semiconductor | 16 MBIT, 3.0V (2.7V TO 3.6V), -4 | 4394 | - | |
BY25Q32CSTJG(T)Memory ICs Products | BYTe Semiconductor | 32 MBIT, 3.0V (2.7V TO 3.6V), -4 | 재고 | - | |
BY25Q128ASSIG(T)Memory ICs Products | BYTe Semiconductor | 128 MBIT, 3.0V (2.7V TO 3.6V), - | 재고 | - | |
BY25Q64ESSIG(T)Memory ICs Products | BYTe Semiconductor | 64 MBIT, 3.0V (2.7V TO 3.6V), -4 | 10134 | - | |
BY25Q32ESSIG(T)Memory ICs Products | BYTe Semiconductor | 32 MBIT, 3.0V (2.7V TO 3.6V), -4 | 9780 | - | |
BY25Q32BSWIG(R)Memory ICs Products | BYTe Semiconductor | 32 MBIT, 3.0V (2.7V TO 3.6V), -4 | 재고 | - | |
BY25D10ASTIG(T)Memory ICs Products | BYTe Semiconductor | 1 MBIT, 3.0V (2.7V TO 3.6V), -40 | 재고 | - | |
BY25D16ASSIG(R)Memory ICs Products | BYTe Semiconductor | 16 MBIT, 3.0V (2.7V TO 3.6V), -4 | 재고 | - | |
BY25Q80AWTIG(T)Memory ICs Products | BYTe Semiconductor | 8 MBIT, WIDE VCC (1.7V TO 3.6V), | 10994 | - | |
BY25Q80AWSIG(R)Memory ICs Products | BYTe Semiconductor | 8 MBIT, WIDE VCC (1.7V TO 3.6V), | 재고 | - | |
BY25Q40AWOIG(R)Memory ICs Products | BYTe Semiconductor | 4 MBIT, WIDE VCC (1.7V TO 3.6V), | 재고 | - | |
BY25D16ASMIG(R)Memory ICs Products | BYTe Semiconductor | 16 MBIT, 3.0V (2.7V TO 3.6V), -4 | 재고 | - |