메모리는 집적 회로에서 데이터 저장 장치로 사용되는 반도체 장치입니다. 이러한 장치는 비휘발성 또는 휘발성의 CBRAM, DRAM, EEPROM, EERAM, EPROM, 플래시, FRAM, NVSRAM, PCM(PRAM), PSRAM, RAM 및 SRAM의 여러 형식으로 제공됩니다. 이 장치의 메모리 크기는 64b ~ 6Tb이며 인터페이스는 I2C, MMC, 병렬, eMMC, 직렬, 단일 와이어, SPI, UFS, Xccela 버스 및 1-Wire입니다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
BY25D40ASTIG(R)Memory ICs Products | BYTe Semiconductor | 4 MBIT, 3.0V (2.7V TO 3.6V), -40 | 2338 | - | |
BY25D80ASTJG(R)Memory ICs Products | BYTe Semiconductor | 8 MBIT, 3.0V (2.7V TO 3.6V), -40 | 재고 | - | |
BY25Q128ASSJG(T)Memory ICs Products | BYTe Semiconductor | 128 MBIT, 3.0V (2.7V TO 3.6V), - | 재고 | - | |
BY25D16ASOIG(T)Memory ICs Products | BYTe Semiconductor | 16 MBIT, 3.0V (2.7V TO 3.6V), -4 | 재고 | - | |
BY25Q40BSTJG(R)Memory ICs Products | BYTe Semiconductor | 4 MBIT, 3.0V (2.7V TO 3.6V), -40 | 재고 | - | |
BY25Q64ESWIG(R)Memory ICs Products | BYTe Semiconductor | 64 MBIT, 3.0V (2.7V TO 3.6V), -4 | 2998 | - | |
BY25D40ASTIG(T)Memory ICs Products | BYTe Semiconductor | 4 MBIT, 3.0V (2.7V TO 3.6V), -40 | 재고 | - | |
BY25Q256FSFIG(T)Memory ICs Products | BYTe Semiconductor | 256 MBIT, 3.0V (2.7V TO 3.6V), - | 재고 | - | |
BY25Q32BSTJG(R)Memory ICs Products | BYTe Semiconductor | 32 MBIT, 3.0V (2.7V TO 3.6V), -4 | 재고 | - | |
BY25Q80BSTIG(T)Memory ICs Products | BYTe Semiconductor | 8 MBIT, 3.0V (2.7V TO 3.6V), -40 | 9883 | - | |
BY25Q40AWTIG(R)Memory ICs Products | BYTe Semiconductor | 4 MBIT, WIDE VCC (1.7V TO 3.6V), | 4360 | - | |
BY25Q16BSTJG(T)Memory ICs Products | BYTe Semiconductor | 16 MBIT, 3.0V (2.7V TO 3.6V), -4 | 재고 | - | |
BY25Q32ESTIG(T)Memory ICs Products | BYTe Semiconductor | 32 MBIT, 3.0V (2.7V TO 3.6V), -4 | 10572 | - | |
BY25Q80BSTIG(R)Memory ICs Products | BYTe Semiconductor | 8 MBIT, 3.0V (2.7V TO 3.6V), -40 | 4386 | - | |
BY25D20ASOIG(R)Memory ICs Products | BYTe Semiconductor | 2 MBIT, 3.0V (2.7V TO 3.6V), -40 | 재고 | - | |
BY25Q20BLRIG(R)Memory ICs Products | BYTe Semiconductor | 2 MBIT, 1.8V (1.65V TO 2.0V), -4 | 54972 | - | |
BY25Q128ESWIG(R)Memory ICs Products | BYTe Semiconductor | 128 MBIT, 3.0V (2.7V TO 3.6V), - | 1899 | - | |
BY25Q80AWXIG(R)Memory ICs Products | BYTe Semiconductor | 8 MBIT, WIDE VCC (1.7V TO 3.6V), | 재고 | - | |
BY25D05ASOIG(T)Memory ICs Products | BYTe Semiconductor | 512 KBIT, 3.0V (2.7V TO 3.6V), - | 재고 | - | |
BY25Q16BLSIG(T)Memory ICs Products | BYTe Semiconductor | 16 MBIT, 1.8V (1.65V TO 2.0V), - | 재고 | - | |
BY25Q128ASSIG(R)Memory ICs Products | BYTe Semiconductor | 128 MBIT, 3.0V (2.7V TO 3.6V), - | 재고 | - | |
BY25D05ASTIG(T)Memory ICs Products | BYTe Semiconductor | 512 KBIT, 3.0V (2.7V TO 3.6V), - | 재고 | - | |
BY25Q80BSSIG(R)Memory ICs Products | BYTe Semiconductor | 8 MBIT, 3.0V (2.7V TO 3.6V), -40 | 4394 | - | |
BY25Q32BSTJG(T)Memory ICs Products | BYTe Semiconductor | 32 MBIT, 3.0V (2.7V TO 3.6V), -4 | 재고 | - | |
BY25Q40GWSIG(T)Memory ICs Products | BYTe Semiconductor | 4 MBIT, WIDE VCC (1.7V TO 3.6V), | 재고 | - |