RF 트랜지스터, FET 및 MOSFET은 장치를 통해 흐르는 전류가 전기장에 의해 제어되는 3개의 단자가 있는 반도체 장치입니다. 이 제품군의 장치는 무선 주파수와 관련된 장비에 사용되도록 설계되었습니다. 신호나 전력을 증폭하거나 스위칭하는 트랜지스터 종류로는 E-pHEMT, LDMOS, MESFET, N채널, P채널, pHEMT, 탄화규소, 2N채널, 4N채널 등이 있다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
BLF879PS,112RF FETs, MOSFETs | Ampleon | Trans RF MOSFET N-CH 104V 5-Pin SOT-539B Bulk | 재고 | - | |
BLP8G27-10ZRF FETs, MOSFETs | Ampleon | Trans RF FET N-CH 65V 16-Pin HVSON EP T/R | 재고 | - | |
BLF7G24LS-140,112RF FETs, MOSFETs | Ampleon | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2 | 재고 | - | |
BLF7G20LS-250P,118RF FETs, MOSFETs | Ampleon | Trans RF MOSFET N-CH 65V 5-Pin SOT-539B T/R | 3017 | - | |
BLF184XRGQRF FETs, MOSFETs | Ampleon | Trans RF FET N-CH 135V 5-Pin LDMOST Rail | 재고 | - | |
BLP9G0722-20GRF FETs, MOSFETs | Ampleon | Trans RF MOSFET N-CH 65V 3-Pin TO-270 | 재고 | - | |
CLF1G0035S-100PURF FETs, MOSFETs | Ampleon | RF Small Signal Field-Effect Transistor, 2-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, CERAMIC PACKAGE-4 | 재고 | - | |
BLA9H0912L-1200PURF FETs, MOSFETs | Ampleon | Trans RF MOSFET N-CH 106V 5-Pin SOT-539A Bulk | 재고 | - | |
CLF1G0060S-10URF FETs, MOSFETs | Ampleon | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET, CERAMIC PACKAGE-2 | 재고 | - | |
BLL6H1214L-250,112RF FETs, MOSFETs | Ampleon | RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2 | 재고 | - | |
BLC10G20LS-240PWTZRF FETs, MOSFETs | Ampleon | Trans RF MOSFET N-CH 65V 7-Pin DFM Tray | 재고 | - | |
BLC8G21LS-160AVYRF FETs, MOSFETs | Ampleon | Trans RF MOSFET N-CH 65V 7-Pin DFM T/R | 재고 | - | |
BLC8G27LS-180AVYRF FETs, MOSFETs | Ampleon | RF Small Signal Field-Effect Transistor, 2-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-6 | 재고 | - | |
BLP10H603ZRF FETs, MOSFETs | Ampleon | RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MO-229, 6 X 5 MM, 0.85 MM HEIGHT, ROHS COMPLIANT, THIN, PLASTIC, HVSON-12 | 재고 | - | |
BLL8H0514LS-130RF FETs, MOSFETs | Ampleon | Trans RF MOSFET N-CH 100V Bulk | 재고 | - | |
BLF2425M9LS140URF FETs, MOSFETs | Ampleon | Trans RF MOSFET N-CH 65V 3-Pin SOT-502B Bulk | 재고 | - | |
BLP05H6110XRRF FETs, MOSFETs | Ampleon | Trans RF FET N-CH 135V 4-Pin HSOP-F T/R | 재고 | - | |
CLF1G0060S-30URF FETs, MOSFETs | Ampleon | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET, CERAMIC PACKAGE-2 | 재고 | - | |
CLF1G0035-100,112RF FETs, MOSFETs | Ampleon | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ROHS COMPLIANT, CERAMIC PACKAGE-2 | 재고 | - | |
BLF2425M9L30URF FETs, MOSFETs | Ampleon | Trans RF MOSFET N-CH 65V 3-Pin CDFM Bulk | 재고 | - | |
BLF7G22LS-250P,112RF FETs, MOSFETs | Ampleon | Trans RF FET N-CH 65V 65A 5-Pin SOT-539B Bulk | 재고 | - | |
BLF888BS,112RF FETs, MOSFETs | Ampleon | RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-4 | 재고 | - | |
BLS7G2730L-200PURF FETs, MOSFETs | Ampleon | RF Small Signal Field-Effect Transistor, 2-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-4 | 재고 | - | |
BLF9G38-10GURF FETs, MOSFETs | Ampleon | Trans RF MOSFET N-CH 65V 3-Pin CDFM Bulk | 재고 | - | |
BLF8G27LS-100URF FETs, MOSFETs | Ampleon | Trans RF FET N-CH 65V 3-Pin SOT-502B Bulk | 재고 | - |