RF 트랜지스터, FET 및 MOSFET은 장치를 통해 흐르는 전류가 전기장에 의해 제어되는 3개의 단자가 있는 반도체 장치입니다. 이 제품군의 장치는 무선 주파수와 관련된 장비에 사용되도록 설계되었습니다. 신호나 전력을 증폭하거나 스위칭하는 트랜지스터 종류로는 E-pHEMT, LDMOS, MESFET, N채널, P채널, pHEMT, 탄화규소, 2N채널, 4N채널 등이 있다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
2N3819_D27ZRF FETs, MOSFETs | onsemi | TRANSISTOR RF N-CH 25V TO-92 | 재고 | - | |
2N5484RF FETs, MOSFETs | onsemi | RF JFET N-CH 400MHz TO-92 15V 5mA 350mW | 재고 | - | |
PD54003-ERF FETs, MOSFETs | STMicroelectronics | RF LDMOS Transistor, 500MHz, 4A, 25V, 12dB Gain, 3W Output | 3021 | - | |
PD55003S-ERF FETs, MOSFETs | STMicroelectronics | 3W 40V 500MHz RF LDMOS Transistor, N-CH, PowerSO-10RF | 474 | - | |
PD55008S-ERF FETs, MOSFETs | STMicroelectronics | 8W 40V 500MHz N-CH LDMOS RF Transistor, PowerSO-10RF | 1218 | - | |
PD55035S-ERF FETs, MOSFETs | STMicroelectronics | RF MOSFET, N-CH, 40V, 7A, 35W, 500MHz, 16.9dB, SM | 재고 | - | |
PD57002-ERF FETs, MOSFETs | STMicroelectronics | 2W 65V 1GHz LDMOS RF Transistor, N-CH, 15dB Gain | 재고 | - | |
PD57018-ERF FETs, MOSFETs | STMicroelectronics | RF MOSFET N-CH 65V 2.5A 1GHz 18W 3-Pin PowerSO-10RF | 910 | - | |
PD57018S-ERF FETs, MOSFETs | STMicroelectronics | RF MOSFET N-CH 65V 2.5A 18W 945MHz Surface Mount | 331 | - | |
PD57030S-ERF FETs, MOSFETs | STMicroelectronics | 30W 28V 1GHz LDMOS RF Transistor N-Channel SM | 619 | - | |
PD57060-ERF FETs, MOSFETs | STMicroelectronics | RF MOSFET N-CH 65V 7A 945MHz LDMOS 60W SM | 535 | - | |
PD57060S-ERF FETs, MOSFETs | STMicroelectronics | 60W 28V 1GHz LDMOS RF Transistor N-CH 65V 7A SM | 재고 | - | |
PD55008L-ERF FETs, MOSFETs | STMicroelectronics | 8W 12.5V 500MHz LDMOS in PowerFLAT plastic package | 2969 | - | |
ATF-36163-TR1GRF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 6 PIN | 24790 | - | |
ATF-36077-TR1RF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, CERAMIC, MICROSTRIP PACKAGE-4 | 재고 | - | |
ATF-53189-TR1RF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, LEAD FREE PACKAGE-3 | 21064 | - | |
ATF-531P8-TR1RF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, PLASTIC, DFP-N, LCC-8 | 3388 | - | |
ATF-541M4-TR1RF FETs, MOSFETs | Broadcom | 2GHz RF FET, N-Channel, 120mA ID, 5V Vdss, 0.5dB NF, GaAs, SMT | 64 | - | |
ATF-331M4-TR1RF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, 1.40 X 1.20 MM, 0.70 MM HEIGHT, MINIPAK-4 | 3013 | - | |
ATF-35143-TR1GRF FETs, MOSFETs | Broadcom | Trans FET N-CH 5.5V 80mA pHEMT 4-Pin(3+Tab) SOT-343 T/R | 13691 | - | |
ATF-50189-TR1RF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, LEAD FREE PACKAGE-3 | 2550 | - | |
ATF-33143-TR1GRF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 4 PIN | 8408 | - | |
ATF-501P8-TR1RF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT,LEAD FREE, PLASTIC,LPCC-8 | 재고 | - | |
ATF-511P8-TR1RF FETs, MOSFETs | Broadcom | RF Power Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8 | 7685 | - | |
ATF-52189-TR1RF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, LEAD FREE PACKAGE-3 | 8293 | - |