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양극성 RF 트랜지스터
(2921 결과)양극성 RF 트랜지스터는 무선 주파수와 관련된 장비에서 신호를 전환하거나 증폭하는 데 사용되는 3개의 단자가 있는 반도체 장치입니다. 바이폴라 접합 트랜지스터는 NPN 또는 PNP로 설계되었으며 트랜지스터 유형, 컬렉터-에미터 항복 전압, 전이 주파수, 잡음 지수, 이득, 전력, DC 전류 이득 및 컬렉터 전류의 특성을 갖습니다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
 GRP-DATA-JAN2N5109Bipolar RF Transistors | Microchip Technology | Trans RF BJT NPN 20V 0.4A 1000mW 3-Pin TO-39 | 재고 | - | |
GRP-DATA-JANTXV2N5109Bipolar RF Transistors | Microchip Technology | Trans RF BJT NPN 20V 0.4A 1000mW 3-Pin TO-39 | 재고 | - | |
JANSF2N2857UBBipolar RF Transistors | Microchip Technology | Trans RF BJT NPN 15V 0.04A 200mW 4-Pin Case UB | 재고 | - | |
JAN2N2857Bipolar RF Transistors | Microchip Technology | Trans RF BJT NPN 15V 0.04A 300mW 4-Pin TO-72 | 재고 | - | |
JANTX2N4957UBBipolar RF Transistors | Microchip Technology | Trans RF BJT PNP 30V 0.03A 3-Pin CSOT-23 | 재고 | - | |
JANTXVL2N4957UBBipolar RF Transistors | Microchip Technology | Transistor, RF BJT PNP | 재고 | - | |
 JANS2N2857Bipolar RF Transistors | Microchip Technology | Polarity NPN Low power, ultra-high frequency transistor. | 재고 | - | |
 2SC1923-Y(F)Bipolar RF Transistors | Toshiba Electronic Devices and Storage Corporation | Trans RF BJT NPN 30V 0.02A 3-Pin TO-92 | 재고 | - | |
 2SC4915-Y(TE85L,F)Bipolar RF Transistors | Toshiba Electronic Devices and Storage Corporation | Trans RF BJT NPN 30V 0.02A 100mW 3-Pin SSM T/R | 재고 | - | |
2SC5086-O(TE85L,F)Bipolar RF Transistors | Toshiba Electronic Devices and Storage Corporation | Trans RF BJT NPN 12V 0.08A 100mW 3-Pin SSM T/R | 재고 | - | |
2SC5066-Y,LF(TBipolar RF Transistors | Toshiba Electronic Devices and Storage Corporation | Trans RF BJT NPN 12V 0.03A 100mW 3-Pin SSM T/R | 1861 | - | |
 2SC5084-Y(TE85L,FBipolar RF Transistors | Toshiba Electronic Devices and Storage Corporation | Trans RF BJT NPN 12V 0.08A 150mW 3-Pin S-Mini T/R | 재고 | - | |
2SC3123(TE85L,F)Bipolar RF Transistors | Toshiba Electronic Devices and Storage Corporation | Trans RF BJT NPN 20V 0.05A 3-Pin S-Mini T/R | 10003 | - | |
2SC4915-Y(TE85R,F)Bipolar RF Transistors | Toshiba Electronic Devices and Storage Corporation | Trans RF BJT NPN 30V 0.02A 100mW 3-Pin SSM T/R | 재고 | - | |
2SC5086-O,LF(TBipolar RF Transistors | Toshiba Electronic Devices and Storage Corporation | Trans RF BJT NPN 12V 0.08A 100mW 3-Pin SSM T/R | 재고 | - | |
2SC2668-O(F)Bipolar RF Transistors | Toshiba Electronic Devices and Storage Corporation | Trans RF BJT NPN 30V 0.02A 100mW 3-Pin | 재고 | - | |
2SC4215-O(TE85R,F)Bipolar RF Transistors | Toshiba Electronic Devices and Storage Corporation | Transistor Silicon NPN Epitaxial Planar Type | 재고 | - | |
2SC5064-Y(TE85L,F)Bipolar RF Transistors | Toshiba Electronic Devices and Storage Corporation | Trans RF BJT NPN 12V 0.03A 150mW 3-Pin S-Mini T/R | 재고 | - | |
 2SC5319(TE85L,F)Bipolar RF Transistors | Toshiba Electronic Devices and Storage Corporation | Trans RF BJT NPN 5V 0.02A 4-Pin USQ T/R | 재고 | - | |
2SC5066-O,LF(TBipolar RF Transistors | Toshiba Electronic Devices and Storage Corporation | Trans RF BJT NPN 12V 0.03A 100mW 3-Pin SSM T/R | 재고 | - | |
MT3S111TU,LF(BBipolar RF Transistors | Toshiba Electronic Devices and Storage Corporation | VHF-UHF Low-Noise, Low-Distortion Amplifier Application | 재고 | - | |
2SC5066-Y(TE85L,F)Bipolar RF Transistors | Toshiba Electronic Devices and Storage Corporation | Trans RF BJT NPN 12V 0.03A 100mW 3-Pin SSM T/R | 재고 | - | |
2SC5096-O(TE85L,F)Bipolar RF Transistors | Toshiba Electronic Devices and Storage Corporation | Trans RF BJT NPN 10V 0.015A 100mW 3-Pin SSM T/R | 재고 | - | |
2SC5108-Y,LF(TBipolar RF Transistors | Toshiba Electronic Devices and Storage Corporation | Trans RF BJT NPN 10V 0.03A 100mW 3-Pin SSM T/R | 12007 | - | |
2SC5086-Y(TE85L,F)Bipolar RF Transistors | Toshiba Electronic Devices and Storage Corporation | Trans RF BJT NPN 12V 0.08A 100mW 3-Pin SSM T/R | 재고 | - |
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