양극성 RF 트랜지스터는 무선 주파수와 관련된 장비에서 신호를 전환하거나 증폭하는 데 사용되는 3개의 단자가 있는 반도체 장치입니다. 바이폴라 접합 트랜지스터는 NPN 또는 PNP로 설계되었으며 트랜지스터 유형, 컬렉터-에미터 항복 전압, 전이 주파수, 잡음 지수, 이득, 전력, DC 전류 이득 및 컬렉터 전류의 특성을 갖습니다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
BFP840ESDH6327XTSA1Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 2.25V 80GHZ SOT343 | 675 | - | |
BFP840FESDH6327XTSA1Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 2.6V 85GHZ 4TSFP | 4880 | - | |
BFP842ESDH6327XTSA1Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 3.7V 60GHZ SOT343 | 5714 | - | |
MAX2601ESA-TBipolar RF Transistors | Analog Devices Inc./Maxim Integrated | RF TRANS NPN 15V 1GHZ 8SOIC | 재고 | - | |
MAX2602ESABipolar RF Transistors | Analog Devices Inc./Maxim Integrated | RF TRANS NPN 15V 1GHZ 8SOIC | 5005 | - | |
MAX2602ESA-TBipolar RF Transistors | Analog Devices Inc./Maxim Integrated | RF TRANS NPN 15V 1GHZ 8SOIC | 재고 | - | |
BFU530XRRBipolar RF Transistors | NXP Semiconductors | RF TRANS NPN 12V 11GHZ SOT143R | 재고 | - | |
1014-12Bipolar RF Transistors | Microsemi | Trans GP BJT NPN 50V 5A 3-Pin Case 55LT-1 | 재고 | - | |
MS2204Bipolar RF Transistors | Microsemi | RF TRANS NPN 20V 1.09GHZ M115 | 재고 | - | |
2SC5012-ABipolar RF Transistors | CEL (California Eastern Laboratories) | RF TRANS NPN 10V 9GHZ SOT343 | 재고 | - | |
JANS2N2857UB-LCBipolar RF Transistors | Microsemi | RF TRANS NPN 15V UB | 재고 | - | |
UTV005Bipolar RF Transistors | Microsemi | Trans GP BJT NPN 45V 0.75A 3-Pin Case 55FT-2 | 재고 | - | |
2SC4228-T1-ABipolar RF Transistors | CEL (California Eastern Laboratories) | RF TRANS NPN 10V 8GHZ SOT323 | 재고 | - | |
2SC4809J0LBipolar RF Transistors | Panasonic | TRANS NPN 10V 0.05A SSMINI-3P | 2971 | - | |
BFU590QXBipolar RF Transistors | NXP Semiconductors | RF TRANS NPN 12V 8GHZ SOT89-3 | 6981 | - | |
MSC1450ABipolar RF Transistors | Microsemi | RF TRANS 65V M216 | 재고 | - | |
MRF586Bipolar RF Transistors | Microsemi | RF TRANS NPN 17V 3GHZ TO39 | 349 | - | |
HFA3127MJR4598Bipolar RF Transistors | Harris Corporation | ULTRA-HIGH FREQUENCY TRANSISTOR | 28 | - | |
NESG340034-T1-ABipolar RF Transistors | Renesas Electronics Corporation | RF BIPOLAR TRANSISTOR | 161000 | - | |
NE85639R-T1-ABipolar RF Transistors | CEL (California Eastern Laboratories) | RF TRANS NPN 12V 9GHZ SOT143R | 재고 | - | |
NE68039R-T1-ABipolar RF Transistors | CEL (California Eastern Laboratories) | RF TRANS NPN 10V 10GHZ SOT143R | 재고 | - | |
BFU520WXBipolar RF Transistors | NXP Semiconductors | RF TRANS NPN 12V 10GHZ SOT323-3 | 98711 | - | |
NE68139R-T1Bipolar RF Transistors | CEL (California Eastern Laboratories) | RF TRANS NPN 10V 9GHZ SOT143R | 재고 | - | |
2SC5751-ABipolar RF Transistors | CEL (California Eastern Laboratories) | RF TRANS NPN 6V 15GHZ SOT343F | 재고 | - | |
JANTXV2N3866ABipolar RF Transistors | Microchip Technology | Trans RF BJT NPN 30V 0.4A 1000mW 3-Pin TO-39 | 재고 | - |