CSD17483F4

The CSD17483F4 is a high-performance N-channel enhancement-mode MOSFET manufactured by Texas Instruments, designed for efficient power conversion in demanding applications. It features a low on-resistance of 0.65 mΩ at VGS = 10 V, enabling minimal conduction losses and high efficiency in power delivery systems. The device is optimized for use in high-frequency switching environments, with a maximum drain current rating of 92 A (at Tj = 175°C), making it suitable for high-current power stages such as DC-DC converters and motor drives. This MOSFET utilizes a trench-based technology that provides excellent thermal performance and robust gate oxide reliability. Its advanced structure ensures low gate charge (QG = 115 nC) and fast switching speeds, which reduce switching losses and improve overall system efficiency. The device also offers a low threshold voltage (Vth = 1.0 V typical), allowing for efficient operation with low-voltage gate drivers, a key advantage in battery-powered and compact designs. The CSD17483F4 is packaged in a TO-247-4L form factor, providing excellent thermal dissipation through its exposed paddle, which facilitates direct mounting to a heatsink or PCB thermal pad. This package design enhances thermal management and supports higher power density in space-constrained applications. Additionally, the device is fully characterized for safe operating area (SOA) and avalanche energy, ensuring reliable performance under transient overcurrent conditions. Common applications include server power supplies, industrial power supplies, uninterruptible power supplies (UPS), and automotive power systems where high efficiency, thermal stability, and long-term reliability are critical. Its compatibility with standard gate drivers and ease of integration into existing power topologies make it an ideal choice for designers seeking to optimize performance while minimizing component count and board space. Engineered for compliance with industry standards including AEC-Q101, the CSD17483F4 is well-suited for harsh environments such as those found in automotive and industrial settings. It supports both synchronous rectification and buck converter configurations, offering flexibility in power stage design. With its combination of low RDS(on), high current capability, and robust packaging, this MOSFET delivers a compelling solution for modern high-efficiency power electronics.