SAMSUNG

K4B4G1646D-BCK0

A: The K4B4G1646D-BCK0 offers a balance of speed, density, and power efficiency. The table below summarises its core specifications: Specification Value Memory Density 4 Gbit (512 MB) Memory Organization 256M × 16 bits Interface Parallel (DDR3) Max Data Transfer Rate 1600 Mbps (DDR3‑1600) Clock Frequency (fCK) 800 MHz (1.6 Gbps effective) CAS Latency (CL) 11 cycles (typical) Supply Voltage (VDD/VDDQ) 1.5V ± 0.075V (1.425V – 1.575V) Operating Current (IDD) 145 mA (max) Operating Temperature 0°C to 85°C (TC, commercial grade) Package 96‑ball FBGA (7.5 × 13.3 mm) RoHS Status Lead‑free, Halogen‑free, RoHS compliant Additional features include: 8 internal banks for concurrent operation. Programmable CAS latency (5, 6, 7, 8, 9, 10, 11). On‑Die Termination (ODT) and ZQ calibration for signal integrity. Burst lengths of 8 (BL8) or 4 with burst chop (BC4). Auto refresh and self refresh modes.

A: The device uses a standard DDR3 parallel interface, connecting to a memory controller via a 96‑ball FBGA footprint. The interface includes: CK_t / CK_c: Differential clock inputs (up to 800 MHz). CKE: Clock enable. CS_n: Chip select. RAS_n, CAS_n, WE_n: Command inputs. BA0–BA2: Bank address inputs (selects 1 of 8 banks). A0–A15: Address inputs (multiplexed row/column). DQ[15:0]: 16‑bit bidirectional data bus. DQS_t / DQS_c: Differential data strobe signals. DM: Data mask. ODT: On‑die termination control. ZQ: Calibration reference (external 240Ω resistor). RESET_n: Asynchronous reset. All signals are referenced to the rising edge of CK_t/CK_c, and data is transferred on both edges of the clock (Double Data Rate). The device supports programmable read and write latencies and includes write leveling and MPR (Multi‑Purpose Register) for system calibration.

A: As a volatile DRAM, the K4B4G1646D-BCK0 does not have program/erase endurance specifications like Flash memory. Instead, its reliability is defined by operating conditions and refresh requirements: Refresh period: 64 ms for all banks at 0°C to 85°C; halved to 32 ms for 85°C to 95°C (if supported). Data retention: Standard DRAM retention time under specified temperature and voltage. Operating temperature range: 0°C to 85°C (TC – case temperature). ESD rating: Not publicly specified but typical for JEDEC‑compliant DDR3 devices. AEC‑Q100 qualification: This variant is not listed as automotive grade (no suffix indicating AEC‑Q100). The device is designed for commercial and industrial applications where periodic refresh is managed by the memory controller. Proper power supply and decoupling are essential for reliable operation.

A: Thanks to its 4Gb density, 1600 Mbps data rate, and industry‑standard 1.5V operation, the K4B4G1646D-BCK0 is well‑suited for a broad range of applications, including: Embedded computing – Industrial motherboards, single‑board computers, and module‑level systems. Consumer electronics – Smart TVs, set‑top boxes, and gaming consoles. Networking equipment – Routers, switches, and base stations. Telecommunications – PON (Passive Optical Networks) and xDSL equipment. Industrial control – PLCs, HMIs, and automation controllers. ⚠️ Important Lifecycle Information: The product lifecycle status for the K4B4G1646D-BCK0 is conflicting. Some distributor sources (e.g., Oneyac, Win‑Source) list the part as Obsolete or EOL (End‑of‑Life) , indicating that Samsung has phased out this specific DDR3 die revision. However, other databases (e.g., JLCSMT) still list it as Active or Mass Production. Given the age of DDR3 technology (introduced in 2007), many DDR3 parts are transitioning to end‑of‑life. For new designs requiring a 4Gb x16 DDR3, engineers are strongly advised to verify current lifecycle status and availability with an authorised Samsung distributor. A recommended alternative may be the K4B4G1646E-BCNB (newer die revision) or other active DDR3 parts from Micron, Winbond, or Alliance Memory.