SAMSUNG_K4A4G085WE-BCPB
original

SAMSUNG
K4A4G085WE-BCPB

774-K4A4G085WE-BCPB
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DRAM Chip DDR4 SDRAM 4Gbit 512Mx8 1.2V 78-Pin FBGA

왜 우리를 선택해야 합니까?

전문 플랫폼

B2B 및 B2C 구매

초고속 배송

1-2일 이내 배송

다양한 종류

정품 제조업체

365일 보증

책임 있는 품질
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

기술 사양

Organization
512Mx8
PCB changed
78
HTS
8542.32.00.36
ECCN (US)
EAR99
PPAP
No
Data Bus Width (bit)
8
Operating Current (mA)
84
Number of Internal Banks
16
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FAQ

What is the K4A4G085WE-BCPB?
A: The K4A4G085WE-BCPB is a 4‑gigabit (4Gb) Double Data Rate 4 (DDR4) Synchronous DRAM manufactured by Samsung Semiconductor. It belongs to Samsung's DDR4 E‑die generation. The device is internally organized as 512M × 8 bits (512 million words × 8 bits) and is housed in a compact 78‑ball FBGA (Fine‑Pitch Ball Grid Array) package. It is designed for high‑performance computing applications requiring high bandwidth and low power, operating from a standard DDR4 supply voltage of 1.2V (range: 1.14V to 1.26V), and is rated for a commercial temperature range of 0°C to 85°C .
What are the key technical features and specifications?
What does the part number K4A4G085WE-BCPB mean?
What is the maximum data rate of this device?
What is the lifecycle status of the K4A4G085WE-BCPB, and what applications is it intended for?
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