


SAMSUNG
K4A4G085WE-BCPB
774-K4A4G085WE-BCPB
PDF 데이터시트
DRAM Chip DDR4 SDRAM 4Gbit 512Mx8 1.2V 78-Pin FBGA
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전문 플랫폼
B2B 및 B2C 구매초고속 배송
1-2일 이내 배송다양한 종류
정품 제조업체365일 보증
책임 있는 품질기술 사양
Organization
512Mx8
PCB changed
78
HTS
8542.32.00.36
ECCN (US)
EAR99
PPAP
No
Data Bus Width (bit)
8
Operating Current (mA)
84
Number of Internal Banks
16
FAQ
What is the K4A4G085WE-BCPB?
A: The K4A4G085WE-BCPB is a 4‑gigabit (4Gb) Double Data Rate 4 (DDR4) Synchronous DRAM manufactured by Samsung Semiconductor. It belongs to Samsung's DDR4 E‑die generation. The device is internally organized as 512M × 8 bits (512 million words × 8 bits) and is housed in a compact 78‑ball FBGA (Fine‑Pitch Ball Grid Array) package. It is designed for high‑performance computing applications requiring high bandwidth and low power, operating from a standard DDR4 supply voltage of 1.2V (range: 1.14V to 1.26V), and is rated for a commercial temperature range of 0°C to 85°C .
What are the key technical features and specifications?
What does the part number K4A4G085WE-BCPB mean?
What is the maximum data rate of this device?
What is the lifecycle status of the K4A4G085WE-BCPB, and what applications is it intended for?



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