SAMSUNG

K4B2G1646F-BCMA

A: The K4B2G1646F-BCMA offers a balance of speed, density, and power efficiency. The table below summarises its core specifications: Specification Value Memory Density 2 Gbit (256 MB) Memory Organization 128M × 16 bits Interface Parallel (DDR3) Max Data Transfer Rate 1866 Mbps (DDR3‑1866) Clock Frequency (fCK) 933 MHz (1.866 Gbps effective) CAS Latency (CL) 13 cycles (typical for DDR3‑1866) Supply Voltage (VDD/VDDQ) 1.5V ± 0.075V (1.425V – 1.575V) Operating Current (IDD) 145 mA (max) Operating Temperature 0°C to 95°C (TC, commercial grade) Package 96‑ball FBGA (7.5 × 13.3 mm) RoHS Status Lead‑free, Halogen‑free, RoHS compliant Additional features include: 8 internal banks for concurrent operations. Programmable CAS latency (5, 6, 7, 8, 9, 10, 11, 13). On‑Die Termination (ODT) and ZQ calibration for signal integrity. Burst lengths of 8 (BL8) or 4 with burst chop (BC4). Auto refresh and self refresh modes. Write leveling and MPR (Multi‑Purpose Register) for system calibration.

A: The device uses a standard DDR3 parallel interface, connecting to a memory controller via a 96‑ball FBGA footprint. The interface includes: CK_t / CK_c: Differential clock inputs (up to 933 MHz). CKE: Clock enable. CS_n: Chip select. RAS_n, CAS_n, WE_n: Command inputs. BA0–BA2: Bank address inputs (selects 1 of 8 banks). A0–A15: Address inputs (multiplexed row/column). DQ[15:0]: 16‑bit bidirectional data bus. DQS_t / DQS_c: Differential data strobe signals. DM: Data mask. ODT: On‑die termination control. ZQ: Calibration reference (external 240Ω resistor). RESET_n: Asynchronous reset. All signals are referenced to the rising edge of CK_t/CK_c, and data is transferred on both edges of the clock (Double Data Rate). The device supports programmable read and write latencies and includes write leveling and MPR for system calibration.

A: As a volatile DRAM, the K4B2G1646F-BCMA does not have program/erase endurance specifications like Flash memory. Its reliability is defined by operating conditions and refresh requirements: Refresh period: 64 ms for all banks at temperatures ≤85°C; when TCASE exceeds 85°C up to 95°C, the refresh period is halved to 32 ms. Data retention: Standard DRAM retention time under specified temperature and voltage (requires periodic refresh). Operating temperature range: 0°C to 95°C (TC – case temperature). ESD rating: Not publicly specified but typical for JEDEC‑compliant DDR3 devices (≥2 kV HBM). AEC‑Q100 qualification: This variant is not listed as automotive grade. The device is designed for commercial and industrial applications where periodic refresh is managed by the memory controller. Proper power supply and decoupling are essential for reliable operation.

A: Thanks to its 2Gb density, 1866 Mbps data rate, and industry‑standard 1.5V operation, the K4B2G1646F-BCMA is well‑suited for a broad range of applications, including: Embedded computing – Industrial motherboards, single‑board computers, and module‑level systems. Consumer electronics – Smart TVs, set‑top boxes, and gaming consoles. Networking equipment – Routers, switches, and base stations. Telecommunications – PON (Passive Optical Networks) and xDSL equipment. Industrial control – PLCs, HMIs, and automation controllers. ⚠️ Important Lifecycle Information: The product lifecycle status for the K4B2G1646F-BCMA is conflicting. Major distributor sources (e.g., DigiKey, Mouser) may list this part as Obsolete or End‑of‑Life (EOL) , as DDR3 is an older generation. Some databases show the part as Active or Mass Production, but given the age of the F‑die DDR3 devices, it is likely that Samsung has transitioned production to newer die revisions (e.g., K4B2G1646F-BCNB or K4B2G1646E‑series). For new designs requiring a 2Gb x16 DDR3, engineers are strongly advised to verify current lifecycle status and availability with an authorised Samsung distributor. Alternative active parts may include K4B2G1646F-BCMB (different speed grade) or devices from Micron (MT41K128M16JT) or Winbond (W632GG6MB).