Uncategorized.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
FLM3439-25FUnclassified | Sumitomo | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PIN | 재고 | - | |
FLM4450-18FUnclassified | Sumitomo | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PIN | 재고 | - | |
FLM1213-12FUnclassified | Sumitomo | RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN | 재고 | - | |
ELM7179-7PSUnclassified | Sumitomo | Transistor | 재고 | - | |
FMM5522GJUnclassified | Sumitomo | Narrow Band High Power Amplifier, 14000MHz Min, 14500MHz Max, 12 X 15 MM, 3.50 MM HEIGHT, HERMETIC SEALED, CASE GJ, 6 PIN | 재고 | - | |
FLM5053-4FUnclassified | Sumitomo | Transistor | 재고 | - | |
EMM5074VUUnclassified | Sumitomo | C to Ka-Band, Power Amplifier MMIC, 5.8-8.5GHz, 32dBm, 1400mA | 205 | - | |
FMM5522GJ/001Unclassified | Sumitomo | VSAT MMIC Module PA, Extrened Bandwith | 재고 | - | |
FLM1415-3FUnclassified | Sumitomo | RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IA, 2 PIN | 104 | - | |
FMM5059VFUnclassified | Sumitomo | Narrow Band High Power Amplifier, 13750MHz Min, 14500MHz Max, HERMETIC SEALED, METAL CERAMIC, CASE VF, 6 PIN | 307 | - | |
FMM5054VFUnclassified | Sumitomo | Narrow Band Medium Power Amplifier, 13750MHz Min, 14500MHz Max, HERMETIC SEALED, METAL CERAMIC, CASE VF, 6 PIN | 재고 | - | |
FLM5964-8FUnclassified | Sumitomo | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN | 236 | - | |
FMM5701XUnclassified | Sumitomo | Wide Band Low Power Amplifier, 18000MHz Min, 28000MHz Max, HERMETIC SEALED, DIE-5 | 재고 | - |