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(3554 결과)Uncategorized.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
 TSL6902IDTUnclassified | STMicroelectronics | STMicroelectronics | 재고 | - | |
 TSL6901IYLTUnclassified | STMicroelectronics | STMicroelectronics | 재고 | - | |
 TSL393IYDTUnclassified | STMicroelectronics | Micropower, rail-to-rail, 5V cost-effective comparators | 재고 | - | |
 TSL393IYQ3TUnclassified | STMicroelectronics | Micropower, rail-to-rail, 5V cost-effective comparators | 재고 | - | |
 TSC2020IYPTUnclassified | STMicroelectronics | 100 V, precision, bidirectional current sense amplifier | 재고 | - | |
 TSL393IDTUnclassified | STMicroelectronics | Micropower, rail-to-rail, 5V cost-effective comparators | 재고 | - | |
 TSL393IQ2TUnclassified | STMicroelectronics | Micropower, rail-to-rail, 5V cost-effective comparators | 재고 | - | |
 SCTHCT250N12G3AGUnclassified | STMicroelectronics | Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK high creepage package | 재고 | - | |
GWA75H65DRFB2Unclassified | STMicroelectronics | Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long leads package | 재고 | - | |
SCTHC250N120G3AGUnclassified | STMicroelectronics | Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK high creepage package | 재고 | - | |
SCT019W120G3-4AGUnclassified | STMicroelectronics | Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A in a HiP247-4 package | 재고 | - | |
SCT055H65G3-7Unclassified | STMicroelectronics | Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an H2PAK-7 package | 재고 | - | |
 SCTW100N120G2AGUnclassified | STMicroelectronics | Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mOhm (typ. TJ = 25 C) in an HiP247 package | 재고 | - | |
 SH70M12W3AGUnclassified | STMicroelectronics | Automotive-grade ACEPACK SMIT half-bridge topology featuring 1200 V, 67 mOhm typ., 28 A SiC Power MOSFET | 재고 | - | |
GH50H65DWB2-7AGUnclassified | STMicroelectronics | Automotive-grade trench gate field-stop 650 V, 50 A high-speed HB2 series IGBT featuring freewheeling SiC diode in an H2PAK-7 package | 재고 | - | |
 STSAFE-V500Unclassified | STMicroelectronics | In-vehicle Secure Element based on JavaCard™ Open Platform & other use cases | 재고 | - | |
 SCT014HU65G3AGUnclassified | STMicroelectronics | Automotive-grade silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A in an HU3PAK package | 재고 | - | |
SCTW60N120G2AGUnclassified | STMicroelectronics | Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247 package | 재고 | - | |
VD5661AA/RWUnclassified | STMicroelectronics | Image Sensor Monochrome 1464x1104Pixels Automotive Die Tape | 재고 | - | |
SCT018H65G3-7Unclassified | STMicroelectronics | Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package | 재고 | - | |
SCT20N170AGUnclassified | STMicroelectronics | Automotive-grade silicon carbide Power MOSFET 1700 V, 64 mOhm typ., 43 A in an HiP247 package | 재고 | - | |
STRADA431Unclassified | STMicroelectronics | 24-GHz Transceiver MMIC for Automotive Radar Sensor | 재고 | - | |
STRADA431-TRUnclassified | STMicroelectronics | 24-GHz Transceiver MMIC for Automotive Radar Sensor | 재고 | - | |
SCT055H65G3AGUnclassified | STMicroelectronics | Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an H2PAK-7 package | 재고 | - | |
A2387DUnclassified | STMicroelectronics | 150 V half-bridge gate driver for automotive applications | 재고 | - |
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