이산 전계 효과 트랜지스터(FET)는 상당한 양의 전류를 전달하면서 고주파수에서 켜고 끌 수 있는 특성이 유리한 전력 변환, 모터 제어, 고체 조명 및 기타 응용 분야에 널리 사용됩니다. 이는 수백 볼트 이하의 정격 전압을 요구하는 애플리케이션에 거의 보편적으로 사용되며, 그 이상에서는 IGBT와 같은 다른 장치 유형의 경쟁력이 더욱 높아집니다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
STL10N60M6Single FETs, MOSFETs | STMicroelectronics | N-channel 600 V, 550 mOhm typ., 5.5 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV package | 1996 | - | |
STL12N60M6Single FETs, MOSFETs | STMicroelectronics | N-channel 600 V, 390 mOhm typ., 6.4 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV package | 3000 | - | |
STL13N60M6Single FETs, MOSFETs | STMicroelectronics | N-channel 600 V, 330 mOhm typ., 7 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV package | 3000 | - | |
STP46N60M6Single FETs, MOSFETs | STMicroelectronics | N-channel 600 V, 68 mOhm typ., 36 A MDmesh M6 Power MOSFET in a TO-220 package | 5195 | - | |
SCT10N120HSingle FETs, MOSFETs | STMicroelectronics | SICFET N-CH 1200V 12A H2PAK-2 | 재고 | - | |
SCT30N120D2Single FETs, MOSFETs | STMicroelectronics | SICFET N-CH 1200V 40A HIP247 | 2972 | - | |
SCT30N120HSingle FETs, MOSFETs | STMicroelectronics | Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an H2PAK-2 package | 834 | - | |
SCTH50N120-7Single FETs, MOSFETs | STMicroelectronics | SICFET N-CH 1200V 65A H2PAK-7 | 재고 | - | |
STF6N60DM2Single FETs, MOSFETs | STMicroelectronics | N-channel 600 V, 0.95 Ohm typ., 5 A MDmesh DM2 Power MOSFET in a TO-220FP package | 4942 | - | |
STFH10N60M6Single FETs, MOSFETs | STMicroelectronics | N-channel 600 V, 520 mOhm typ., 6.4 A MDmesh M6 Power MOSFET in a TO-220FP wide crepage package | 재고 | - | |
STFU14N80K5Single FETs, MOSFETs | STMicroelectronics | MOSFET N-CH 800V 12A TO220FP | 1009 | - | |
STL17N60M6Single FETs, MOSFETs | STMicroelectronics | MOSFET N-CH 600V 10A PWRFLAT HV | 6822 | - | |
STL18N60M6Single FETs, MOSFETs | STMicroelectronics | N-channel 600 V, 255 mOhm typ., 9 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV package | 3659 | - | |
STL22N60M6Single FETs, MOSFETs | STMicroelectronics | N-channel 600 V, 220 mOhm typ., 10 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV package | 재고 | - | |
STP22N60M6Single FETs, MOSFETs | STMicroelectronics | N-channel 600 V, 196 mOhm typ., 15 A MDmesh M6 Power MOSFET in a TO-220 package | 6713 | - | |
STU5N70M6-SSingle FETs, MOSFETs | STMicroelectronics | N-channel 700 V, 1.2 Ohm typ., 3.5 A MDmesh M6 Power MOSFET in a short IPAK package | 재고 | - | |
STU5N80K5Single FETs, MOSFETs | STMicroelectronics | N-channel 800 V, 1.50 Ohm typ., 4 A MDmesh K5 Power MOSFET in an IPAK package | 7433 | - | |
STU6N65M2-SSingle FETs, MOSFETs | STMicroelectronics | MOSFET N-CH 650V 4A IPAK | 재고 | - | |
STU7N60DM2Single FETs, MOSFETs | STMicroelectronics | N-channel 600 V, 0.78 Ohm typ., 6 A MDmesh DM2 Power MOSFET in an IPAK package | 99 | - | |
STU7N65M6Single FETs, MOSFETs | STMicroelectronics | MOSFET N-CH 650V 5A IPAK | 재고 | - | |
STW68N60M6-4Single FETs, MOSFETs | STMicroelectronics | N-channel 600 V, 35 mOhm typ., 63 A MDmesh M6 Power MOSFET in a TO247-4 package | 1521 | - | |
STW75N60M6Single FETs, MOSFETs | STMicroelectronics | N-channel 600 V, 32 mOhm typ., 72 A MDmesh M6 Power MOSFET in a TO-247 package | 570 | - | |
STWA20N95DK5Single FETs, MOSFETs | STMicroelectronics | N-channel 950 V, 275 mOhm typ., 18 A MDmesh DK5 Power MOSFET in a TO-247 long leads package | 재고 | - | |
STWA35N65DM2Single FETs, MOSFETs | STMicroelectronics | PTD HIGH VOLTAGE | 2014 | - | |
STWA48N60M6Single FETs, MOSFETs | STMicroelectronics | MOSFET N-CH 600V 39A TO247 | 16 | - |