메모리는 집적 회로에서 데이터 저장 장치로 사용되는 반도체 장치입니다. 이러한 장치는 비휘발성 또는 휘발성의 CBRAM, DRAM, EEPROM, EERAM, EPROM, 플래시, FRAM, NVSRAM, PCM(PRAM), PSRAM, RAM 및 SRAM의 여러 형식으로 제공됩니다. 이 장치의 메모리 크기는 64b ~ 6Tb이며 인터페이스는 I2C, MMC, 병렬, eMMC, 직렬, 단일 와이어, SPI, UFS, Xccela 버스 및 1-Wire입니다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
K4B4G1646E-BYK000Memory ICs Products | Samsung Semiconductor | DDR3-1600 4GB (256MX16)1.25NS CL | 1953 | - | |
K4B1G1646I-BYMA000Memory ICs Products | Samsung Semiconductor | DDR3-1866 1GB (64MX16)1.07NS CL1 | 1082 | - | |
K9F8008WOM-TCBMemory ICs Products | Samsung Semiconductor | FLASH NAND SLC 8MB 3.3V 48-PIN T | 27795 | - | |
K6R1008C1D-TC10Memory ICs Products | Samsung Semiconductor | SRAM ASYNC FAST 1M 128x8 5V 32-T | 505 | - | |
K6E0808C1E-JC15000Memory ICs Products | Samsung Semiconductor | SRAM ASYNC FAST 256K 32Kx8 5V 28 | 3426 | - | |
K6X4008C1F-MF55T00Memory ICs Products | Samsung Semiconductor | SRAM ASYNC SLOW 4MB 512Kx8 5V 32 | 52420 | - | |
K6T4008C1C-GL55T00Memory ICs Products | Samsung Semiconductor | SRAM ASYNC SLOW 4MB 512Kx8 5V 32 | 14439 | - | |
K6T1008V2E-TF70TMemory ICs Products | Samsung Semiconductor | SRAM ASYNC SLOW 1MB 128KX8 3.3V | 46800 | - | |
K6E0808V1E-JC15T00Memory ICs Products | Samsung Semiconductor | SRAM ASYNC FAST 256K 32KX8 3.3V | 3874 | - | |
KM681002BJ-10TMemory ICs Products | Samsung Semiconductor | SRAM ASYNC FAST 1M 128Kx8 5V 32- | 5990 | - | |
K6R1008V1C-JC12T00Memory ICs Products | Samsung Semiconductor | SRAM ASYNC FAST 1MB 128Kx8 3.3V | 45000 | - | |
KM68V1002CJ-15Memory ICs Products | Samsung Semiconductor | SRAM ASYNC FAST 1M 128Kx8 3.3V 3 | 10508 | - | |
K6E0804C1E-JC15T00Memory ICs Products | Samsung Semiconductor | SRAM ASYNC FAST 256K 64KX4 5V 28 | 1581 | - | |
K6E0808C1E-JC12Memory ICs Products | Samsung Semiconductor | SRAM ASYNC FAST 256K 32Kx8 5V 28 | 4633 | - | |
K6E0808C1E-JC12TMemory ICs Products | Samsung Semiconductor | SRAM ASYNC FAST 256K 32Kx8 5V 28 | 26000 | - | |
K6F4016R4E-EF85T00Memory ICs Products | Samsung Semiconductor | SRAM ASYNC SLOW 4M 256Kx16 1.8V | 4000 | - | |
K6T1008V2E-TF70Memory ICs Products | Samsung Semiconductor | SRAM ASYNC SLOW 1MB 128KX8 3.3V | 720 | - | |
K6R4004C1D-JC10T00Memory ICs Products | Samsung Semiconductor | SRAM ASYNC FAST 4M 1024 x4 10ns | 1345 | - | |
K6E0808C1E-JC15T00Memory ICs Products | Samsung Semiconductor | SRAM ASYNC FAST 256K 32KX8 5V 28 | 3008 | - | |
K6T4008C1C-GL55TMemory ICs Products | Samsung Semiconductor | SRAM ASYNC SLOW 4M 512Kx8 5V 32- | 3000 | - | |
K6X4008C1F-MF55000Memory ICs Products | Samsung Semiconductor | SRAM ASYNC SLOW 4MB 512Kx8 5V 32 | 336 | - | |
KM68V1002CJ-15TMemory ICs Products | Samsung Semiconductor | SRAM ASYNC FAST 1M 128Kx8 3.3V 3 | 2000 | - | |
K6R1016C1D-TI10T00Memory ICs Products | Samsung Semiconductor | SRAM ASYNC FAST 1M 64KX16 5V 44- | 69 | - | |
K6R1008V1C-JC12000Memory ICs Products | Samsung Semiconductor | SRAM ASYNC FAST 1MB 128Kx8 3.3V | 800 | - | |
K6F4008U2D-FF70Memory ICs Products | Samsung Semiconductor | SRAM ASYNC SLOW 4MB 512Kx8 3V 48 | 1170 | - |