이산 전계 효과 트랜지스터(FET)는 상당한 양의 전류를 전달하면서 고주파수에서 켜고 끌 수 있는 특성이 유리한 전력 변환, 모터 제어, 고체 조명 및 기타 응용 분야에 널리 사용됩니다. 이는 수백 볼트 이하의 정격 전압을 요구하는 애플리케이션에 거의 보편적으로 사용되며, 그 이상에서는 IGBT와 같은 다른 장치 유형의 경쟁력이 더욱 높아집니다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
2SK3115B(1)-S32-AYSingle FETs, MOSFETs | Renesas Electronics Corporation | N-CHANNEL POWER MOSFET | 47200 | - | |
UPA2708GR-E1-ATSingle FETs, MOSFETs | Renesas Electronics Corporation | N-CHANNEL POWER MOSFET | 37500 | - | |
RJK2017DPP-90#T2Single FETs, MOSFETs | Renesas Electronics Corporation | N-CHANNEL POWER MOSFET | 1367 | - | |
UPA2738GR-E1-AXSingle FETs, MOSFETs | Renesas Electronics Corporation | MOSFET P-CH 30V 10A 8SOP | 4873 | - | |
N0436N-ZK-E1-AYSingle FETs, MOSFETs | Renesas Electronics Corporation | ABU / MOSFET | 2998 | - | |
NP95N03ZUGP-E1Single FETs, MOSFETs | Renesas Electronics Corporation | TRANSISTOR | 재고 | - | |
RQK0607AQDQS#H1Single FETs, MOSFETs | Renesas Electronics Corporation | MOSFET N-CH 60V 2.4A UPAK | 재고 | - | |
RJK6014DPK-00#T0Single FETs, MOSFETs | Renesas Electronics Corporation | MOSFET N-CH 600V 16A TO3P | 재고 | - | |
RJL6018DPK-00#T0Single FETs, MOSFETs | Renesas Electronics Corporation | MOSFET N-CH 600V 27A TO3P | 재고 | - | |
N0434N-S23-AYSingle FETs, MOSFETs | Renesas Electronics Corporation | MOSFET N-CH 40V 100A TO262 | 497 | - | |
H5N3011P80-E#T2Single FETs, MOSFETs | Renesas Electronics Corporation | N-CHANNEL POWER MOSFET | 4770 | - | |
N0400P-ZK-E1-AYSingle FETs, MOSFETs | Renesas Electronics Corporation | ABU / MOSFET | 2443 | - | |
NP36P04KDG-E1-AYSingle FETs, MOSFETs | Renesas Electronics Corporation | MOSFET P-CH 40V 36A TO263 | 1594 | - | |
RQA0005QXDQS#H1Single FETs, MOSFETs | Renesas Electronics Corporation | MOSFET N-CH 16V 800MA UPAK | 재고 | - | |
2SK2935-91-ESingle FETs, MOSFETs | Renesas Electronics Corporation | N-CHANNEL POWER MOSFET | 1149 | - | |
RJK4002DJE-00#Z0Single FETs, MOSFETs | Renesas Electronics Corporation | MOSFET N-CH 400V 3A TO92MOD | 재고 | - | |
2SK3900-ZP-E1-AZSingle FETs, MOSFETs | Renesas Electronics Corporation | POWER FIELD-EFFECT TRANSISTOR | 2700 | - | |
NP55N055SDG-E1-AYSingle FETs, MOSFETs | Renesas Electronics Corporation | MOSFET N-CH 55V 55A TO252 | 300010 | - | |
NP90N04VUG-E1-AYSingle FETs, MOSFETs | Renesas Electronics Corporation | MOSFET N-CH 40V 90A TO252 | 1736 | - | |
RJL5013DPP-00#T2Single FETs, MOSFETs | Renesas Electronics Corporation | N-CHANNEL POWER MOSFET | 2536 | - | |
NP89N055MUK-S18-AYSingle FETs, MOSFETs | Renesas Electronics Corporation | MOSFET N-CH 55V 90A TO220-3 | 재고 | - | |
RJK0351DPA-02#J0Single FETs, MOSFETs | Renesas Electronics Corporation | N-CHANNEL POWER MOSFET | 50000 | - | |
RJK5009DPP-00#T2Single FETs, MOSFETs | Renesas Electronics Corporation | N-CHANNEL POWER MOSFET | 7936 | - | |
2SK3288ENTL-ESingle FETs, MOSFETs | Renesas Electronics Corporation | N-CHANNEL MOSFET | 45000 | - | |
NP60N04MUG-S18-AYSingle FETs, MOSFETs | Renesas Electronics Corporation | MOSFET N-CH 40V 60A TO220 | 재고 | - |