양극성 RF 트랜지스터는 무선 주파수와 관련된 장비에서 신호를 전환하거나 증폭하는 데 사용되는 3개의 단자가 있는 반도체 장치입니다. 바이폴라 접합 트랜지스터는 NPN 또는 PNP로 설계되었으며 트랜지스터 유형, 컬렉터-에미터 항복 전압, 전이 주파수, 잡음 지수, 이득, 전력, DC 전류 이득 및 컬렉터 전류의 특성을 갖습니다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
2SC5432-T1-ABipolar RF Transistors | Renesas Electronics Corporation | Trans RF BJT NPN 12V 0.1A 3-Pin Thin-Type Ultra Super Mini-Mold T/R | 재고 | - | |
2SC3357-T1BBipolar RF Transistors | Renesas Electronics Corporation | 4019 | - | ||
2SC5369-T1-ABipolar RF Transistors | Renesas Electronics Corporation | 재고 | - | ||
2SC3569Bipolar RF Transistors | Renesas Electronics Corporation | NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING | 1368 | - | |
2SC3357-T1-A-REBipolar RF Transistors | Renesas Electronics Corporation | 16506 | - | ||
2SC3357-T2Bipolar RF Transistors | Renesas Electronics Corporation | NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD | 재고 | - | |
2SC5434-T1Bipolar RF Transistors | Renesas Electronics Corporation | Trans RF BJT NPN 10V 0.035A 3-Pin Thin-Type Ultra Super Mini-Mold T/R | 재고 | - | |
2SC3554-T1-AZBipolar RF Transistors | Renesas Electronics Corporation | NPN SILICON EPITAXIAL GP BJT TRANSISTOR | 1012 | - | |
2SC5408-T1Bipolar RF Transistors | Renesas Electronics Corporation | NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION / NPN EPITAXIAL SILICON RF Transistor FOR MICROWAVE HIGH-GAIN AMPLIFICATION | 9002 | - | |
2SC4569Bipolar RF Transistors | Renesas Electronics Corporation | UHF TV TUNER OSC/MIXER NPN SILICON EPITAXIAL TRANSISTOR / NPN SILICON EPITAXIAL RF Transistor | 재고 | - | |
2SC4568-T1BBipolar RF Transistors | Renesas Electronics Corporation | 재고 | - | ||
2SC5433Bipolar RF Transistors | Renesas Electronics Corporation | Trans RF BJT NPN 10V 0.065A 3-Pin Thin-Type Ultra Super Mini-Mold / NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION | 24018 | - | |
2SC5436-T1Bipolar RF Transistors | Renesas Electronics Corporation | Trans RF BJT NPN 3V 0.03A 3-Pin Thin-Type Ultra Super Mini-Mold T/R | 90012 | - | |
2SB1217-AZBipolar RF Transistors | Renesas Electronics Corporation | Trans GP BJT PNP 60V 3A 3-Pin TO-126 | 재고 | - | |
FN1A4Z(T1B-A)Bipolar RF Transistors | Renesas Electronics Corporation | Trans Digital BJT PNP 50V 100mA 3-Pin Mini-Mold T/R | 재고 | - | |
2SC3588-K-Z(AZ)Bipolar RF Transistors | Renesas Electronics Corporation | 재고 | - | ||
2SC3624AT1BAL15Bipolar RF Transistors | Renesas Electronics Corporation | 재고 | - | ||
UPA650TT-E1Bipolar RF Transistors | Renesas Electronics Corporation | 100213 | - | ||
2SD2217AZBipolar RF Transistors | Renesas Electronics Corporation | Trans Darlington NPN 300V 0.3A 2000mW 3-Pin(3+Tab) TO-220 Isolated | 재고 | - | |
2SC4536-T1Bipolar RF Transistors | Renesas Electronics Corporation | NPN EPITAXIAL SILICON RF TRANSISTOR FOR | 30014 | - | |
2SA1611-M5(T1-A)Bipolar RF Transistors | Renesas Electronics Corporation | Trans GP BJT PNP 50V 0.1A Automotive 3-Pin SC-70 T/R | 재고 | - | |
2SB1026DMTR(E)Bipolar RF Transistors | Renesas Electronics Corporation | Trans GP BJT PNP 100V 1A 4-Pin(3+Tab) UPAK T/R | 재고 | - | |
HD1A4M-T1-AZBipolar RF Transistors | Renesas Electronics Corporation | Trans Digital BJT NPN 60V 1A Automotive 4-Pin(3+Tab) SC-62 T/R | 재고 | - | |
2SA1413-Z-AZBipolar RF Transistors | Renesas Electronics Corporation | Trans GP BJT PNP 600V 1A 3-Pin(2+Tab) TO-252 | 재고 | - | |
2SD1164-AZBipolar RF Transistors | Renesas Electronics Corporation | Trans Darlington NPN 60V 2A 2000mW 3-Pin(2+Tab) TO-251 | 재고 | - |