사전 바이어스 바이폴라 트랜지스터 어레이는 유용할 수 있는 방식으로 각 트랜지스터에 연결된 저항기와 함께 두 개 이상의 바이폴라 트랜지스터를 통합합니다. 일반적으로 각 트랜지스터의 이미터와 베이스 단자 사이에 하나의 저항기가 있고 각 트랜지스터의 베이스 단자에 다른 저항기가 연결되어 있습니다. 장치 패키지에 있는 사용자 접근 가능 핀.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
PEMD6Bipolar Transistor Arrays, Pre-Biased | NXP Semiconductors | TRANS PREBIAS NPN/PNP SOT666 | 15917 | - | |
PEMD19Bipolar Transistor Arrays, Pre-Biased | NXP Semiconductors | TRANS PREBIAS NPN/PNP SOT666 | 4638 | - | |
PDTC143XKBipolar Transistor Arrays, Pre-Biased | NXP Semiconductors | TRANS PREBIAS NPN 250MW SMT3 | 재고 | - | |
PBLS4004VBipolar Transistor Arrays, Pre-Biased | NXP Semiconductors | 40 V PNP BISS loadswitch | 8014 | - | |
PIMH9Bipolar Transistor Arrays, Pre-Biased | NXP Semiconductors | TRANS 2NPN PREBIAS 0.6W 6TSOP | 2005 | - | |
PEMD3/DGBipolar Transistor Arrays, Pre-Biased | NXP Semiconductors | 32009 | - | ||
PEMD13Bipolar Transistor Arrays, Pre-Biased | NXP Semiconductors | TRANS PREBIAS NPN/PNP SOT666 | 115608 | - | |
PUMT1/DGBipolar Transistor Arrays, Pre-Biased | NXP Semiconductors | 12003 | - | ||
PDTD113ETBipolar Transistor Arrays, Pre-Biased | NXP Semiconductors | Low VCEsat (BISS) transistors | 58019 | - | |
PBRP113ZTBipolar Transistor Arrays, Pre-Biased | NXP Semiconductors | PNP 800 mA, 40 V BISS RET; R1 = 1 kW, R2 = 10 kW | 17009 | - | |
PUMD3+115Bipolar Transistor Arrays, Pre-Biased | NXP Semiconductors | 291014 | - | ||
PEMB20Bipolar Transistor Arrays, Pre-Biased | NXP Semiconductors | TRANS 2PNP PREBIAS 0.3W SOT666 | 10518 | - | |
PUMB24Bipolar Transistor Arrays, Pre-Biased | NXP Semiconductors | TRANS 2PNP PREBIAS 0.3W 6TSSOP | 21007 | - | |
PUMH8Bipolar Transistor Arrays, Pre-Biased | NXP Semiconductors | 재고 | - | ||
PDTC123TEBipolar Transistor Arrays, Pre-Biased | NXP Semiconductors | TRANS PREBIAS NPN 150MW SC75 | 24010 | - | |
PDTA114YKBipolar Transistor Arrays, Pre-Biased | NXP Semiconductors | TRANS PREBIAS PNP 250MW SMT3 | 57016 | - | |
PDTC143EEFBipolar Transistor Arrays, Pre-Biased | NXP Semiconductors | NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ | 재고 | - | |
PDTC123YMB315Bipolar Transistor Arrays, Pre-Biased | NXP Semiconductors | NOW NEXPERIA PDTC123YMB - SMALL / Pre-Biased Bipolar Transistor (BJT) | 5009 | - | |
PDTA124XKBipolar Transistor Arrays, Pre-Biased | NXP Semiconductors | PNP resistor-equipped transistors; R1 = 22 kohm, R2 = 47 kohm | 재고 | - | |
PBRN113ETBipolar Transistor Arrays, Pre-Biased | NXP Semiconductors | NPN 800 mA, 40 V BISS RETs; R1 = 1 kΩ, R2 = 1 kΩ | 9713 | - | |
PDTC123YUBipolar Transistor Arrays, Pre-Biased | NXP Semiconductors | Low VCEsat (BISS) transistors | 320544 | - | |
PDTC123EUBipolar Transistor Arrays, Pre-Biased | NXP Semiconductors | Low VCEsat (BISS) transistors | 4647 | - | |
PDTC124XKBipolar Transistor Arrays, Pre-Biased | NXP Semiconductors | TRANS PREBIAS NPN 250MW SMT3 | 재고 | - | |
PUMB1/DG/B2Bipolar Transistor Arrays, Pre-Biased | NXP Semiconductors | 재고 | - | ||
PEMG3002AELBipolar Transistor Arrays, Pre-Biased | NXP Semiconductors | 17011 | - |