이산 전계 효과 트랜지스터(FET)는 상당한 양의 전류를 전달하면서 고주파수에서 켜고 끌 수 있는 특성이 유리한 전력 변환, 모터 제어, 고체 조명 및 기타 응용 분야에 널리 사용됩니다. 이는 수백 볼트 이하의 정격 전압을 요구하는 애플리케이션에 거의 보편적으로 사용되며, 그 이상에서는 IGBT와 같은 다른 장치 유형의 경쟁력이 더욱 높아집니다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
JANTX2N6768Single FETs, MOSFETs | Microsemi | Trans MOSFET N-CH 400V 14A 3-Pin(2+Tab) TO-3 | 1843 | - | |
JANTX2N6770Single FETs, MOSFETs | Microsemi | Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, | 재고 | - | |
JANTX2N6784USingle FETs, MOSFETs | Microsemi | MOSFET N-CH 18-LCC | 재고 | - | |
JANTX2N6798Single FETs, MOSFETs | Microsemi | Small Signal Field-Effect Transistor, 5.5A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | 233 | - | |
JANTX2N7236USingle FETs, MOSFETs | Microsemi | MOSFET P-CH 100V 18A | 2906 | - | |
JANTXV2N6756Single FETs, MOSFETs | Microsemi | Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, | 재고 | - | |
JANTXV2N6760Single FETs, MOSFETs | Microsemi | Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN | 재고 | - | |
JANTXV2N6762Single FETs, MOSFETs | Microsemi | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN | 재고 | - | |
JANTXV2N6764Single FETs, MOSFETs | Microsemi | Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN | 재고 | - | |
JANTXV2N6766Single FETs, MOSFETs | Microsemi | Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, | 211 | - | |
JANTXV2N6768Single FETs, MOSFETs | Microsemi | MOSFET N-CH | 재고 | - | |
JANTXV2N6770Single FETs, MOSFETs | Microsemi | MOSFET N-CH | 재고 | - | |
JANTXV2N6782Single FETs, MOSFETs | Microsemi | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, | 326 | - | |
JANTXV2N6782USingle FETs, MOSFETs | Microsemi | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.61ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-18 | 재고 | - | |
JANTXV2N6784Single FETs, MOSFETs | Microsemi | MOSFET N-CH | 재고 | - | |
JANTXV2N6788Single FETs, MOSFETs | Microsemi | MOSFET N-CH 100V 6A | 재고 | - | |
JANTXV2N6788USingle FETs, MOSFETs | Microsemi | Power Field-Effect Transistor, 4.5A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-18/15 | 재고 | - | |
JANTXV2N6790Single FETs, MOSFETs | Microsemi | MOSFET N-CH | 339 | - | |
JANTXV2N6790USingle FETs, MOSFETs | Microsemi | Power Field-Effect Transistor, 2.8A I(D), 200V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-18/15 | 재고 | - | |
JANTXV2N6796Single FETs, MOSFETs | Microsemi | Small Signal Field-Effect Transistor, 8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | 322 | - | |
JANTXV2N6796USingle FETs, MOSFETs | Microsemi | Power Field-Effect Transistor, 8A I(D), 100V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-16 | 재고 | - | |
JANTXV2N6798Single FETs, MOSFETs | Microsemi | Small Signal Field-Effect Transistor, 5.5A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | 3581 | - | |
JANTXV2N6798USingle FETs, MOSFETs | Microsemi | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-18 | 재고 | - | |
JANTXV2N6800Single FETs, MOSFETs | Microsemi | Small Signal Field-Effect Transistor, 3A I(D), 400V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | 재고 | - | |
JANTXV2N7225USingle FETs, MOSFETs | Microsemi | Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, U3, U PKG-3 | 재고 | - |