이산 전계 효과 트랜지스터(FET)는 상당한 양의 전류를 전달하면서 고주파수에서 켜고 끌 수 있는 특성이 유리한 전력 변환, 모터 제어, 고체 조명 및 기타 응용 분야에 널리 사용됩니다. 이는 수백 볼트 이하의 정격 전압을 요구하는 애플리케이션에 거의 보편적으로 사용되며, 그 이상에서는 IGBT와 같은 다른 장치 유형의 경쟁력이 더욱 높아집니다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
ISC0805NLSATMA1Single FETs, MOSFETs | Infineon Technologies | MOSFET N-CH 100V 13A/71A TDSON | 27 | 1+: $1.05943 10+: $0.84857 30+: $0.74228 | |
ISC0603NLSATMA1Single FETs, MOSFETs | Infineon Technologies | MOSFET N-CH 80V 12.3A/56A TDSON | 재고 | 10+: $3.37028 30+: $3.03257 100+: $2.56285
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ISZ0602NLSATMA1Single FETs, MOSFETs | Infineon Technologies | MOSFET N-CH 80V 12A/64A TSDSON | 39 | 1+: $1.39715 10+: $1.16572 30+: $1.03885 | |
IMZA65R057M1HXKSA1Single FETs, MOSFETs | Infineon Technologies | SILICON CARBIDE MOSFET, PG-TO247 | 28 | 1+: $6.96000 10+: $6.00515 30+: $5.42400
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IPW65R018CFD7XKSA1Single FETs, MOSFETs | Infineon Technologies | 650 V COOLMOS CFD7 SUPERJUNCTION | 22 | 1+: $19.81715 10+: $18.91028 30+: $17.34343 | |
ISC060N10NM6ATMA1Single FETs, MOSFETs | Infineon Technologies | TRENCH >=100V PG-TDSON-8 | 22 | 1+: $2.55600 10+: $2.18228 30+: $1.94743 | |
IPB19DP10NMATMA1Single FETs, MOSFETs | Infineon Technologies | TRENCH >=100V PG-TO263-3 | 2138 | 1+: $1.26515 10+: $1.15543 30+: $1.08685
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IAUC60N06S5L073ATMA1Single FETs, MOSFETs | Infineon Technologies | MOSFET_)40V 60V) PG-TDSON-8 | 624 | 1+: $0.53485 10+: $0.52115 30+: $0.51257
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IPT013N08NM5LFATMA1Single FETs, MOSFETs | Infineon Technologies | TRENCH 40<-<100V PG-HSOF-8 | 77 | 1+: $9.38915 10+: $8.17372 30+: $7.43315 | |
IPB040N08NF2SATMA1Single FETs, MOSFETs | Infineon Technologies | TRENCH 40<-<100V PG-TO263-3 | 110 | 1+: $2.09657 10+: $2.04515 30+: $2.01085 | |
IPL65R115CFD7AUMA1Single FETs, MOSFETs | Infineon Technologies | COOLMOS CFD7 SUPERJUNCTION MOSFE | 440 | 1+: $3.34800 10+: $3.16628 30+: $3.05828
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IPT65R040CFD7XTMA1Single FETs, MOSFETs | Infineon Technologies | MOSFET N-CH 650V 8HSOF | 132 | 1+: $11.55085 10+: $9.96857 30+: $9.00343 | |
BSC007N04LS6SCATMA1Single FETs, MOSFETs | Infineon Technologies | TRENCH <= 40V | 재고 | 1+: $3.03772 10+: $2.97428 30+: $2.93143
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ISC240P06LMATMA1Single FETs, MOSFETs | Infineon Technologies | TRENCH 40<-<100V | 95 | 1+: $2.28343 10+: $1.94743 30+: $1.73657 | |
IMT65R030M1HXUMA1Single FETs, MOSFETs | Infineon Technologies | SILICON CARBIDE MOSFET | 재고 | 2000+: $8.29876 | |
AIMBG120R010M1XTMA1Single FETs, MOSFETs | Infineon Technologies | SIC_DISCRETE | 11 | 1+: $56.47885 30+: $53.55943 | |
IMT65R039M1HXUMA1Single FETs, MOSFETs | Infineon Technologies | SILICON CARBIDE MOSFET | 33 | 1+: $11.86285 10+: $10.07485 30+: $8.98457 | |
IPD040N08NF2SATMA1Single FETs, MOSFETs | Infineon Technologies | MOSFET | 105 | 1+: $1.42115 10+: $1.38857 30+: $1.36628 | |
IPT015N10NF2SATMA1Single FETs, MOSFETs | Infineon Technologies | MOSFET | 재고 | 1800+: $0.66652 3600+: $0.65417 | |
IQE006NE2LM5CGSCATMA1Single FETs, MOSFETs | Infineon Technologies | OPTIMOS LOWVOLTAGE POWER MOSFET | 303 | 1+: $2.51143 10+: $2.11200 30+: $1.86000
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IPA95R310PFD7XKSA1Single FETs, MOSFETs | Infineon Technologies | MOSFET N-CH 950V 8.7A TO220-3 | 200 | 1+: $3.16628 10+: $2.65543 50+: $2.33657 | |
IPF015N10N5ATMA1Single FETs, MOSFETs | Infineon Technologies | TRENCH >=100V | 22 | 1+: $10.80515 10+: $9.29315 30+: $8.37085 | |
IPD038N06NF2SATMA1Single FETs, MOSFETs | Infineon Technologies | TRENCH 40<-<100V | 28 | 1+: $0.76457 10+: $0.74572 30+: $0.73372 | |
IAUTN12S5N017ATMA1Single FETs, MOSFETs | Infineon Technologies | MOSFET_(120V 300V) | 33 | 1+: $5.89372 10+: $5.74457 30+: $5.64343 | |
IPTC007N06NM5ATMA1Single FETs, MOSFETs | Infineon Technologies | TRENCH 40<-<100V | 27 | 1+: $6.57600 10+: $5.62115 30+: $5.04000
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