RF 트랜지스터, FET 및 MOSFET은 장치를 통해 흐르는 전류가 전기장에 의해 제어되는 3개의 단자가 있는 반도체 장치입니다. 이 제품군의 장치는 무선 주파수와 관련된 장비에 사용되도록 설계되었습니다. 신호나 전력을 증폭하거나 스위칭하는 트랜지스터 종류로는 E-pHEMT, LDMOS, MESFET, N채널, P채널, pHEMT, 탄화규소, 2N채널, 4N채널 등이 있다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
IPSH6N03LB GRF FETs, MOSFETs | Infineon Technologies | MOSFET N-CH 30V 50A IPAK | 재고 | - | |
PTFA192001FV4FWSA1RF FETs, MOSFETs | Infineon Technologies | IC FET RF LDMOS 200W H-37260-2 | 재고 | - | |
IPP147N03LGRF FETs, MOSFETs | Infineon Technologies | MOSFET N-CH 30V 20A TO-220-3 | 4344 | - | |
BSD223PL6327RF FETs, MOSFETs | Infineon Technologies | MOSFET 2P-CH 20V 0.39A SOT363 | 12011 | - | |
IPP26CN10NGRF FETs, MOSFETs | Infineon Technologies | MOSFET N-CH 100V 35A TO-220 | 7808 | - | |
BSC265N10LSFGRF FETs, MOSFETs | Infineon Technologies | MOSFET N-CH 100V 40A TDSON-8 | 40013 | - | |
IRF1104LPBFRF FETs, MOSFETs | Infineon Technologies | MOSFET N-CH 40V 100A TO-262 | 1816 | - | |
IPB530N15N3GRF FETs, MOSFETs | Infineon Technologies | OptiMOS3 Power-Transistor | 2961 | - | |
PTFB082817FHV1XWSA1RF FETs, MOSFETs | Infineon Technologies | IC FET RF LDMOS H-34288 / RF Mosfet LDMOS 28 V 2.15 A 821MHz 19.3dB 60W H-34288-4/2 | 재고 | - | |
IRF7484QPBFRF FETs, MOSFETs | Infineon Technologies | Trans MOSFET N-CH 40V 14A 8-Pin SOIC | 재고 | - | |
IRF6633TR1PBFRF FETs, MOSFETs | Infineon Technologies | MOSFET N-CH 20V 16A DIRECTFET / Trans MOSFET N-CH Si 20V 16A 7-Pin Direct-FET MP T/R | 1854 | - | |
SPB80N03S2L06TRF FETs, MOSFETs | Infineon Technologies | MOSFET N-CH 30V 80A D2PAK | 재고 | - | |
IPF10N03LARF FETs, MOSFETs | Infineon Technologies | MOSFET N-CH 25V 30A DPAK | 재고 | - | |
080N03MSRF FETs, MOSFETs | Infineon Technologies | 18001 | - | ||
IRL3714STRRPBFRF FETs, MOSFETs | Infineon Technologies | MOSFET N-CH 20V 36A D2PAK / Trans MOSFET N-CH 20V 36A 3-Pin(2+Tab) D2PAK T/R | 재고 | - | |
IRF6215L-103PBFRF FETs, MOSFETs | Infineon Technologies | MOSFET P-CH 150V 13A TO-262 / POWER MOSFET | 4007 | - | |
IRF7750GTRPBFRF FETs, MOSFETs | Infineon Technologies | MOSFET 2P-CH 20V 4.7A 8TSSOP | 재고 | - | |
BSL306N L6327RF FETs, MOSFETs | Infineon Technologies | Mosfet 2N-CH 30V 2.3A 6TSOP | 재고 | - | |
SPI80N03S2L-03RF FETs, MOSFETs | Infineon Technologies | MOSFET N-CH 30V 80A I2PAK | 재고 | - | |
IPB65R280C6RF FETs, MOSFETs | Infineon Technologies | 650V CoolMOS C6 Power Transistor | 2011 | - | |
SPP07N60CFDRF FETs, MOSFETs | Infineon Technologies | MOSFET N-CH 650V 6.6A TO-220 | 9010 | - | |
BSC750N10NDRF FETs, MOSFETs | Infineon Technologies | OptiMOSTM2 Power-Transistor | 10720 | - | |
BSC042N03MSGRF FETs, MOSFETs | Infineon Technologies | OptiMOS™3 Power-MOSFET | 20012 | - | |
IPD230N06L GRF FETs, MOSFETs | Infineon Technologies | 재고 | - | ||
IRF5Y31N20RF FETs, MOSFETs | Infineon Technologies | Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line | 재고 | - |