FET, MOSFET

(807 결과)

전계 효과 트랜지스터(FET)는 전기장을 사용하여 전류 흐름을 제어하는 전자 장치입니다. 게이트 단자에 전압을 가하면 드레인 단자와 소스 단자 사이의 전도성이 변경됩니다. FET는 단일 캐리어 유형 작동을 포함하므로 유니폴라 트랜지스터라고도 합니다. 즉, FET는 작동 시 전자나 정공을 전하 캐리어로 사용하지만 둘 다를 사용하지는 않습니다. 전계 효과 트랜지스터는 일반적으로 저주파에서 매우 높은 입력 임피던스를 나타냅니다. 금속 산화물 반도체 전계 효과 트랜지스터(MOSFET)는 FET의 한 유형입니다.

부분 # 제조업체 설명 유효성 가격 수량
Infineon Technologies_IPA65R190CFD

IPA65R190CFD

FETs, MOSFETs
Infineon Technologies MOSFETs N-Ch 650V 17.5A TO220FP CoolMOS CFD2
3
-
Infineon Technologies_IPA65R380E6

IPA65R380E6

FETs, MOSFETs
Infineon Technologies MOSFETs N-Ch 700V 10.6A TO220FP-3 CoolMOS E6
74
-
Infineon Technologies_IMW65R026M2HXKSA1

IMW65R026M2HXKSA1

FETs, MOSFETs
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V, 26 mohm G2
350
-
Infineon Technologies_BSC084P03NS3 G

BSC084P03NS3 G

FETs, MOSFETs
Infineon Technologies MOSFETs P-Ch -30V -78.6A TDSON-8 OptiMOS P3
9893
-
Infineon Technologies_IMT65R050M2HXUMA1

IMT65R050M2HXUMA1

FETs, MOSFETs
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
190
-
Infineon Technologies_IPB072N15N3 G

IPB072N15N3 G

FETs, MOSFETs
Infineon Technologies MOSFETs N-Ch 150V 100A D2PAK-2 OptiMOS 3
100002
-
Infineon Technologies_IPT007N06N

IPT007N06N

FETs, MOSFETs
Infineon Technologies MOSFETs TRENCH 40<-<100V
5283
-
Infineon Technologies_IPW65R048CFDA

IPW65R048CFDA

FETs, MOSFETs
Infineon Technologies MOSFETs N-Ch 650V 63.3A TO247-3
269
-
Infineon Technologies_BSS138N H6327

BSS138N H6327

FETs, MOSFETs
Infineon Technologies MOSFETs N-Ch 60V 230mA SOT-23-3
375559
-
Infineon Technologies_IPP65R065C7

IPP65R065C7

FETs, MOSFETs
Infineon Technologies MOSFETs HIGH POWER_NEW
360
-
Infineon Technologies_IPP60R099P6

IPP60R099P6

FETs, MOSFETs
Infineon Technologies MOSFETs HIGH POWER PRICE/PERFORM
484
-
Infineon Technologies_IPB120N04S4-01

IPB120N04S4-01

FETs, MOSFETs
Infineon Technologies MOSFETs N-Ch 40V 120A D2PAK-2 OptiMOS-T2
753
-
Infineon Technologies_GS-065-011-6-LR-TR

GS-065-011-6-LR-TR

FETs, MOSFETs
Infineon Technologies MOSFETs CoolGaN Transistor 700 V G4 for ultimate efficiency and reliability
재고
-
Infineon Technologies_BSB280N15NZ3 G

BSB280N15NZ3 G

FETs, MOSFETs
Infineon Technologies MOSFETs N-Ch 150V 30A CanPAK3 MZ OptiMOS 3
재고
-
Infineon Technologies_IPB090N06N3 G

IPB090N06N3 G

FETs, MOSFETs
Infineon Technologies MOSFETs N-Ch 60V 50A D2PAK-2 OptiMOS 3
2442
-
Infineon Technologies_IPB50N10S3L-16

IPB50N10S3L-16

FETs, MOSFETs
Infineon Technologies MOSFETs N-Ch 100V 70A D2PAK-2 OptiMOS-T
475
-
Infineon Technologies_SPW47N60C3

SPW47N60C3

FETs, MOSFETs
Infineon Technologies MOSFETs N-Ch 650V 47A TO247-3 CoolMOS C3
68
-
Infineon Technologies_SPA04N80C3

SPA04N80C3

FETs, MOSFETs
Infineon Technologies MOSFETs N-Ch 800V 4A TO220FP-3 CoolMOS C3
재고
-
Infineon Technologies_IPW60R125C6

IPW60R125C6

FETs, MOSFETs
Infineon Technologies MOSFETs N-Ch 600V 30A TO247-3 CoolMOS C6
192
-
Infineon Technologies_IPD90P03P4L-04

IPD90P03P4L-04

FETs, MOSFETs
Infineon Technologies MOSFETs P-Ch -30V -90A DPAK-2 OptiMOS-P2
재고
-
Infineon Technologies_IPD50P03P4L-11

IPD50P03P4L-11

FETs, MOSFETs
Infineon Technologies MOSFETs P-Ch -30V -50A DPAK-2 OptiMOS-P2
1504
-
Infineon Technologies_IPB60R165CP

IPB60R165CP

FETs, MOSFETs
Infineon Technologies MOSFETs N-Ch 650V 21A D2PAK-2 CoolMOS CP
2625
-
Infineon Technologies_BSD235N H6327

BSD235N H6327

FETs, MOSFETs
Infineon Technologies MOSFETs N-Ch 20V 950mA SOT-363-6
775
-
Infineon Technologies_BSC070N10NS3 G

BSC070N10NS3 G

FETs, MOSFETs
Infineon Technologies MOSFETs N-Ch 100V 90A TDSON-8 OptiMOS 3
4944
-
Infineon Technologies_IPA60R750E6

IPA60R750E6

FETs, MOSFETs
Infineon Technologies MOSFETs N-Ch 650V 5.7A TO220FP-3 CoolMOS E6
18
-