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양극성 RF 트랜지스터
(312 결과)양극성 RF 트랜지스터는 무선 주파수와 관련된 장비에서 신호를 전환하거나 증폭하는 데 사용되는 3개의 단자가 있는 반도체 장치입니다. 바이폴라 접합 트랜지스터는 NPN 또는 PNP로 설계되었으며 트랜지스터 유형, 컬렉터-에미터 항복 전압, 전이 주파수, 잡음 지수, 이득, 전력, DC 전류 이득 및 컬렉터 전류의 특성을 갖습니다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
 2SC4093R-T1Bipolar RF Transistors | CEL (California Eastern Laboratories) | TRANS NPN 1GHZ SOT-143R | 11519 | - | |
 2SC4095RBipolar RF Transistors | CEL (California Eastern Laboratories) | TRANSISTOR NPN 2GHZ SOT-143R | 12015 | - | |
 NESG2101M05-T1Bipolar RF Transistors | CEL (California Eastern Laboratories) | Trans RF BJT NPN 5V 0.1A 500mW 4-Pin Thin-Type Super Mini-Mold T/R / NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR | 62908 | - | |
 2SA1977-T1BBipolar RF Transistors | CEL (California Eastern Laboratories) | Trans RF BJT PNP 12V 0.05A 200mW / RF TRANSISTOR PNP SOT-23 | 1134 | - | |
 2SC3584Bipolar RF Transistors | CEL (California Eastern Laboratories) | 재고 | - | ||
 UPA895TS-T3Bipolar RF Transistors | CEL (California Eastern Laboratories) | TRANSISTOR NPN DUAL 6-SMINI | 6844 | - | |
 2SC5507-T2Bipolar RF Transistors | CEL (California Eastern Laboratories) | NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD / Trans RF BJT NPN 3.3V 0.012A 4-Pin Thin-Type Super Mini-Mold T/R | 7528 | - | |
 2SC5013-T1Bipolar RF Transistors | CEL (California Eastern Laboratories) | RF TRANSISTOR NPN SOT-343 | 3514 | - | |
 NESG2101M05Bipolar RF Transistors | CEL (California Eastern Laboratories) | TRANS NPN 2GHZ M05 | 30006 | - | |
 2SC3356-T1B-A R25Bipolar RF Transistors | CEL (California Eastern Laboratories) | 60013 | - | ||
 2SC3355Bipolar RF Transistors | CEL (California Eastern Laboratories) | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR | 397 | - | |
 NE202930-T1-ABipolar RF Transistors | CEL (California Eastern Laboratories) | RF TRANS NPN 6V 11GHZ SOT323 | 재고 | - | |
NE685M33-T3-ABipolar RF Transistors | CEL (California Eastern Laboratories) | TRANSISTOR NPN 2GHZ M33 | 재고 | - | |
 2SC3588-Z-T1-AZBipolar RF Transistors | CEL (California Eastern Laboratories) | 1514 | - | ||
 NE52418-T1Bipolar RF Transistors | CEL (California Eastern Laboratories) | IC AMP HBT GAAS LN 4-SMINI | 98180 | - | |
 UPA801TF-T1-ABipolar RF Transistors | CEL (California Eastern Laboratories) | 9003 | - | ||
 2SC5195Bipolar RF Transistors | CEL (California Eastern Laboratories) | TRANS NPN 2GHZ SMD | 재고 | - | |
 2SC5186Bipolar RF Transistors | CEL (California Eastern Laboratories) | TRANS NPN 2GHZ SMD | 6003 | - | |
 2SC5012-T1Bipolar RF Transistors | CEL (California Eastern Laboratories) | RF TRANSISTOR NPN SOT-343 | 8116 | - | |
 2SC5014-T1Bipolar RF Transistors | CEL (California Eastern Laboratories) | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD / RF Epitaxial Bipolar Transistor | 2014 | - | |
 2SA1978-T1BBipolar RF Transistors | CEL (California Eastern Laboratories) | RF TRANSISTOR PNP SOT-23 | 2983 | - | |
 2SC3356-T1B-ABipolar RF Transistors | CEL (California Eastern Laboratories) | RF TRANSISTOR NPN SOT-23 | 150012 | - | |
 2SC3355-ABipolar RF Transistors | CEL (California Eastern Laboratories) | Trans RF BJT NPN 12V 0.1A 600mW 3-Pin TO-92 | 28812 | - | |
 2SC3588-Z-T1Bipolar RF Transistors | CEL (California Eastern Laboratories) | 4171 | - | ||
 2SC3357REBipolar RF Transistors | CEL (California Eastern Laboratories) | Trans RF BJT NPN 12V 0.1A 4-Pin(3+Tab) Power Mini-Mold | 15009 | - |
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