영어
독일 사람
일본어
포르투갈 인
멕시코
네덜란드 사람
메모리 IC 제품
(81 결과)메모리는 집적 회로에서 데이터 저장 장치로 사용되는 반도체 장치입니다. 이러한 장치는 비휘발성 또는 휘발성의 CBRAM, DRAM, EEPROM, EERAM, EPROM, 플래시, FRAM, NVSRAM, PCM(PRAM), PSRAM, RAM 및 SRAM의 여러 형식으로 제공됩니다. 이 장치의 메모리 크기는 64b ~ 6Tb이며 인터페이스는 I2C, MMC, 병렬, eMMC, 직렬, 단일 와이어, SPI, UFS, Xccela 버스 및 1-Wire입니다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
 APS12808L-OBM-BAMemory ICs Products | AP Memory | DRAM IoT RAM 128Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24 | 4789 | - | |
 APS256XXN-OB9-WAMemory ICs Products | AP Memory | DRAM IoT RAM 256Mb OPI (x8,x16) DDR 250MHz, 1.8V, Ind. Temp., WLCSP | 재고 | - | |
 APS1604M-SQRX-SNMemory ICs Products | AP Memory | DRAM IoT RAM 16Mb QSPI (x1,x4) SDR 144/84MHz, RBX, 1.8V, Ext. Temp., SOP8 | 2768 | - | |
 APS25608N-OBR-BDMemory ICs Products | AP Memory | DRAM IoT RAM 256Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24 | 1839 | - | |
APS1604M-SQR-RBMemory ICs Products | AP Memory | DRAM IoT RAM 16Mb QSPI (x1,x4) SDR 144/84MHz, RBX, 1.8V, Ind. Temp, WLCSP | 재고 | - | |
APS12808L-3OBM-BAMemory ICs Products | AP Memory | DRAM IoT RAM 128Mb OPI (x8) DDR 133MHz, 3V, Ind. Temp., BGA24 | 643 | - | |
 APS6404L-3SQN-ZRMemory ICs Products | AP Memory | DRAM IoT RAM 64Mb QSPI (x1,x4) SDR 133MHz, 3V, Ind. Temp., USON8 | 6936 | - | |
APS6404L-3SQRX-SNMemory ICs Products | AP Memory | DRAM IoT RAM 64Mb QSPI (x1,x4) SDR 133/84MHz, RBX, 3V, Ext. Temp., SOP8 | 2436 | - | |
APS51208N-OBR-BDMemory ICs Products | AP Memory | DRAM IoT RAM 512Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24 | 4691 | - | |
APS12804O-DQ-WAMemory ICs Products | AP Memory | DRAM IoT RAM 128Mb QSPI (x4) DDR 166MHz, HS, 1.8V, Ind. Temp, WLCSP | 재고 | - | |
 APS1604M-SQQ-SNMemory ICs Products | AP Memory | DRAM IoT RAM 16Mb QSPI (x4) SDR 144/84MHz, QCC51xx SoC, 1.8V, Ind. Temp., SOP8 | 29 | - | |
APS1604M-3SQR-ZRMemory ICs Products | AP Memory | DRAM IoT RAM 16Mb QSPI (x1,x4) SDR 133/84MHz, RBX, 3V, USON8 | 6217 | - | |
APS6404L-SQN-SNMemory ICs Products | AP Memory | DRAM IoT RAM 64Mb QSPI (x1,x4) SDR 144MHz, 1.8V, Ind. Temp., SOP8 | 12426 | - | |
APS12808L-OBMX-BAMemory ICs Products | AP Memory | DRAM IoT RAM 128Mb OPI (x8) DDR 200MHz, 1.8V, Ext. Temp., BGA24 | 594 | - | |
APS12804O-SQRH-WAMemory ICs Products | AP Memory | DRAM IoT RAM 128Mb QSPI (x1,x4) SDR 144/84MHz, HS, 1.8V, Ind. Temp, WLCSP | 재고 | - | |
APS6404L-SQH-SNMemory ICs Products | AP Memory | DRAM IoT RAM 64Mb QSPI (x1,x4) SDR 144MHz, HS, 1.8V, Ind. Temp., SOP8 | 재고 | - | |
APS6404L-SQH-ZRMemory ICs Products | AP Memory | DRAM IoT RAM 64Mb QSPI (x1,x4) SDR 144MHz, HS, 1.8V, USON8 | 8333 | - | |
APS256XXN-OBR-BGMemory ICs Products | AP Memory | DRAM IoT RAM 256Mb OPI (x8,x16) DDR 200MHz, 1.8V, Ind. Temp., BGA24 | 3159 | - | |
APS6408L-OBM-WHMemory ICs Products | AP Memory | DRAM IoT RAM 64Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., WLCSP | 재고 | - | |
APS128XXN-OBRA-WAMemory ICs Products | AP Memory | DRAM IoT RAM 128Mb OPI (x8,x16) DDR 200MHz, 1.8V, Ind. Temp., WLCSP | 재고 | - | |
APS256XXN-OBR-WAMemory ICs Products | AP Memory | DRAM IoT RAM 256Mb OPI (x8,x16) DDR 200MHz, 1.8V, Ind. Temp., WLCSP | 재고 | - | |
APS12808O-OBR-WBMemory ICs Products | AP Memory | DRAM IoT RAM 128Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., WLCSP | 재고 | - | |
APS256XXN-OB9-BGMemory ICs Products | AP Memory | DRAM IoT RAM 256Mb OPI (x8,x16) DDR 250MHz, 1.8V, Ind. Temp., BGA24 | 211 | - | |
 APS256XXN-OBRX-BGMemory ICs Products | AP Memory | DRAM IoT RAM 256Mb OPI x8,x16 DDR 200MHz, 1.8V Temp BGA24 | 재고 | - | |
AD310032CMemory ICs Products | AP Memory | LPDDR3 1Gbx32 1866MHz | 재고 | - |
.png?x-oss-process=image/format,webp/resize,h_32)
