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메모리 IC 제품
(81 결과)메모리는 집적 회로에서 데이터 저장 장치로 사용되는 반도체 장치입니다. 이러한 장치는 비휘발성 또는 휘발성의 CBRAM, DRAM, EEPROM, EERAM, EPROM, 플래시, FRAM, NVSRAM, PCM(PRAM), PSRAM, RAM 및 SRAM의 여러 형식으로 제공됩니다. 이 장치의 메모리 크기는 64b ~ 6Tb이며 인터페이스는 I2C, MMC, 병렬, eMMC, 직렬, 단일 와이어, SPI, UFS, Xccela 버스 및 1-Wire입니다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
 APS1604M-SQRX-SNMemory ICs Products | AP Memory | DRAM IoT RAM 16Mb QSPI (x1,x4) SDR 144/84MHz, RBX, 1.8V, Ext. Temp., SOP8 | 2768 | - | |
 APS512XXN-OB9-BGMemory ICs Products | AP Memory | DRAM IoT RAM 512Mb OPI (x8,x16) DDR 250MHz, 1.8V, Ind. Temp., BGA24 | 재고 | - | |
 APS6404L-3SQN-SNMemory ICs Products | AP Memory | DRAM IoT RAM 64Mb QSPI (x1,x4) SDR 133MHz, 3V, Ind. Temp., SOP8 | 2288 | - | |
 APS6408L-3OC-BAMemory ICs Products | AP Memory | DRAM IoT RAM 64Mb OPI (x8) DDR 200MHz, 3V, Ind. Temp., BGA24 (for Renesas RZ/A SoC) | 390 | - | |
APS512XXN-OB9-WBMemory ICs Products | AP Memory | DRAM IoT RAM 512Mb OPI (x8,x16) DDR 250MHz, 1.8V, Ind. Temp., WLCSP | 재고 | - | |
APS12808L-3OBM-BAMemory ICs Products | AP Memory | DRAM IoT RAM 128Mb OPI (x8) DDR 133MHz, 3V, Ind. Temp., BGA24 | 643 | - | |
APS6404L-3SQRX-SNMemory ICs Products | AP Memory | DRAM IoT RAM 64Mb QSPI (x1,x4) SDR 133/84MHz, RBX, 3V, Ext. Temp., SOP8 | 2436 | - | |
APS51208N-OBR-BDMemory ICs Products | AP Memory | DRAM IoT RAM 512Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24 | 4691 | - | |
APS12804O-DQ-WAMemory ICs Products | AP Memory | DRAM IoT RAM 128Mb QSPI (x4) DDR 166MHz, HS, 1.8V, Ind. Temp, WLCSP | 재고 | - | |
APS1604M-SQQ-SNMemory ICs Products | AP Memory | DRAM IoT RAM 16Mb QSPI (x4) SDR 144/84MHz, QCC51xx SoC, 1.8V, Ind. Temp., SOP8 | 29 | - | |
 APS1604M-3SQR-ZRMemory ICs Products | AP Memory | DRAM IoT RAM 16Mb QSPI (x1,x4) SDR 133/84MHz, RBX, 3V, USON8 | 6217 | - | |
APS12808L-OBMX-BAMemory ICs Products | AP Memory | DRAM IoT RAM 128Mb OPI (x8) DDR 200MHz, 1.8V, Ext. Temp., BGA24 | 594 | - | |
APS12804O-SQRH-WAMemory ICs Products | AP Memory | DRAM IoT RAM 128Mb QSPI (x1,x4) SDR 144/84MHz, HS, 1.8V, Ind. Temp, WLCSP | 재고 | - | |
APS1604M-SQQ-RBMemory ICs Products | AP Memory | DRAM IoT RAM 16Mb QSPI (x4) SDR 144/84MHz, QCC51xx SoC, 1.8V, Ind. Temp, WLCSP | 재고 | - | |
APS6408L-OCH-BAMemory ICs Products | AP Memory | DRAM IoT RAM 64Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24 (OctaRAM for Renesas RZ/A SoC) | 759 | - | |
APS6408L-OBMX-BAMemory ICs Products | AP Memory | DRAM IoT RAM 64Mb OPI (x8) DDR 200MHz, 1.8V, Ext. Temp., BGA24 | 417 | - | |
APS1604M-SQ-ZRMemory ICs Products | AP Memory | DRAM IoT RAM 16Mb QSPI (x1,x4) SDR 144MHz, 1.8V, USON8 | 재고 | - | |
APS1604M-SQ-SNMemory ICs Products | AP Memory | DRAM IoT RAM 16Mb QSPI (x1,x4) SDR 144MHz, 1.8V, Ind. Temp., SOP8 | 47 | - | |
APS256XXN-OBR-WAMemory ICs Products | AP Memory | DRAM IoT RAM 256Mb OPI (x8,x16) DDR 200MHz, 1.8V, Ind. Temp., WLCSP | 재고 | - | |
APS12808O-OBR-WBMemory ICs Products | AP Memory | DRAM IoT RAM 128Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., WLCSP | 재고 | - | |
APS256XXN-OB9-BGMemory ICs Products | AP Memory | DRAM IoT RAM 256Mb OPI (x8,x16) DDR 250MHz, 1.8V, Ind. Temp., BGA24 | 211 | - | |
 APS256XXN-OBRX-BGMemory ICs Products | AP Memory | DRAM IoT RAM 256Mb OPI x8,x16 DDR 200MHz, 1.8V Temp BGA24 | 재고 | - | |
APS6408L-3OBM-BAMemory ICs Products | AP Memory | DRAM IoT RAM 64Mb OPI (x8) DDR 133MHz, 3V, Ind. Temp., BGA24 | 4289 | - | |
APS6404L-SQRH-ZRMemory ICs Products | AP Memory | DRAM IoT RAM 64Mb QSPI (x1,x4) SDR 84MHz, RBX, HS, 1.8V, USON8 | 1000 | - | |
APS6408L-OBM-BAMemory ICs Products | AP Memory | DRAM IoT RAM 64Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24 | 5450 | - |
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