이산 전계 효과 트랜지스터(FET)는 상당한 양의 전류를 전달하면서 고주파수에서 켜고 끌 수 있는 특성이 유리한 전력 변환, 모터 제어, 고체 조명 및 기타 응용 분야에 널리 사용됩니다. 이는 수백 볼트 이하의 정격 전압을 요구하는 애플리케이션에 거의 보편적으로 사용되며, 그 이상에서는 IGBT와 같은 다른 장치 유형의 경쟁력이 더욱 높아집니다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
IPP018N10N5XKSA1Single FETs, MOSFETs | Infineon Technologies | TRENCH >=100V | 11 | 1+: $4.98515 10+: $4.85828 50+: $4.77428 | |
IMYH200R024M1HXKSA1Single FETs, MOSFETs | Infineon Technologies | SIC DISCRETE | 재고 | 1+: $60.01543 10+: $57.91715 | |
IAUC120N06S5N011ATMA1Single FETs, MOSFETs | Infineon Technologies | MOSFET_)40V 60V) | 5 | 1+: $1.88572 10+: $1.84285 30+: $1.81543 | |
IGLR60R260D1XUMA1Single FETs, MOSFETs | Infineon Technologies | GAN HV | 재고 | 1+: $3.70972 10+: $3.61543 30+: $3.55200
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IGLR60R190D1XUMA1Single FETs, MOSFETs | Infineon Technologies | GAN HV | 6 | 1+: $4.69619 10+: $4.59209 30+: $4.52269
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IQE046N08LM5ATMA1Single FETs, MOSFETs | Infineon Technologies | TRENCH 40<-<100V | 12 | 10+: $2.75657 30+: $2.48228 100+: $2.20628
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DMTH15H017LPSWQ-13Single FETs, MOSFETs | Diodes Incorporated | MOSFET BVDSS: 101V~250V POWERDI5 | 160 | 1+: $3.24857 10+: $2.76685 30+: $2.46515 | |
NVH4L060N065SC1Single FETs, MOSFETs | onsemi | SIC MOS TO247-4L 650V | 5 | 1+: $14.25257 10+: $13.75372 | |
SI2328ASingle FETs, MOSFETs | UMW | SOT-23 N-CHANNEL POWER MOSFETS R | 46314 | 100+: $0.03152 300+: $0.02893 3000+: $0.02504
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AO3409ASingle FETs, MOSFETs | UMW | 30V 2.6A 130MR@10V,2.6A 1.4W 3V@ | 7362 | 200+: $0.03324 600+: $0.02772 3000+: $0.02440
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AO3413ASingle FETs, MOSFETs | UMW | SOT-23-3 POWER MOSFETS ROHS | 4072 | 200+: $0.02868 600+: $0.02363 3000+: $0.02060
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AO3423ASingle FETs, MOSFETs | UMW | SOT-23 POWER MOSFETS ROHS | 14174 | 200+: $0.02996 600+: $0.02551 3000+: $0.02119
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35N06Single FETs, MOSFETs | UMW | TO-252 N-CHANNEL POWER MOSFET | 7159 | 50+: $0.09344 150+: $0.08204 500+: $0.07349
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2N65GSingle FETs, MOSFETs | UMW | SOT-223 N-CHANNEL POWER MOSFETS | 4819 | 50+: $0.07723 150+: $0.06684 500+: $0.05908
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STD80N450K6Single FETs, MOSFETs | STMicroelectronics | N-CHANNEL 800 V, 380 MOHM TYP., | 22 | 1+: $4.75372 10+: $4.64572 30+: $4.57200 | |
SSM6K818R,LFSingle FETs, MOSFETs | Toshiba Electronic Devices and Storage Corporation | N-CH MOSFET 30V, +/-20V, 15A ,0. | 213 | 1+: $0.69943 10+: $0.68228 30+: $0.66857 | |
XPQR3004PB,LXHQSingle FETs, MOSFETs | Toshiba Electronic Devices and Storage Corporation | 40V U-MOS IX-H L-TOGL 0.3MOHM | 재고 | 1+: $7.88057 10+: $7.68515 30+: $7.55657
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SI8810-TPSingle FETs, MOSFETs | Micro Commercial Components (MCC) | Interface | 26 | 5+: $0.10489 50+: $0.08515 150+: $0.07528 | |
SI3404HE3-TPSingle FETs, MOSFETs | Micro Commercial Components (MCC) | Interface | 74 | 10+: $0.08741 100+: $0.07096 300+: $0.06272 | |
2N7002KS-TPSingle FETs, MOSFETs | Micro Commercial Components (MCC) | Interface | 625 | 20+: $0.02525 200+: $0.02008 600+: $0.01720 | |
SISH107DN-T1-GE3Single FETs, MOSFETs | Vishay / Siliconix | P-CHANNEL 30 V (D-S) MOSFET POWE | 110 | 1+: $0.57085 10+: $0.55885 30+: $0.55028 | |
SISH103DN-T1-GE3Single FETs, MOSFETs | Vishay / Siliconix | P-CHANNEL 30 V (D-S) MOSFET POWE | 110 | 1+: $0.67200 10+: $0.65657 30+: $0.64800 | |
STD9N60M6Single FETs, MOSFETs | STMicroelectronics | DISCRETE | 22 | 1+: $4.13657 10+: $3.28628 30+: $2.94515 | |
STD11N60M6Single FETs, MOSFETs | STMicroelectronics | N-channel 600 V, 500 mOhm typ., 8 A MDmesh M6 Power MOSFET in a DPAK package | 110 | 1+: $1.99885 10+: $1.95428 30+: $1.92515 | |
STWA32N65DM6AGSingle FETs, MOSFETs | STMicroelectronics | DISCRETE | 19 | 1+: $5.01772 10+: $4.89428 30+: $4.81372 |