이산 전계 효과 트랜지스터(FET)는 상당한 양의 전류를 전달하면서 고주파수에서 켜고 끌 수 있는 특성이 유리한 전력 변환, 모터 제어, 고체 조명 및 기타 응용 분야에 널리 사용됩니다. 이는 수백 볼트 이하의 정격 전압을 요구하는 애플리케이션에 거의 보편적으로 사용되며, 그 이상에서는 IGBT와 같은 다른 장치 유형의 경쟁력이 더욱 높아집니다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
SCT4036KEHRC11Single FETs, MOSFETs | ROHM Semiconductor | 1200V, 43A, 3-PIN THD, TRENCH-ST | 6 | 1+: $18.64972 10+: $17.99828 | |
SCT4036KRHRC15Single FETs, MOSFETs | ROHM Semiconductor | 1200V, 43A, 4-PIN THD, TRENCH-ST | 26 | 1+: $18.48685 10+: $17.61772 30+: $16.11257 | |
IPP014N06NF2SAKMA2Single FETs, MOSFETs | Infineon Technologies | TRENCH 40<-<100V PG-TO220-3 | 39 | 1+: $2.74628 10+: $2.67943 50+: $2.63315 | |
RS6P100BHTB1Single FETs, MOSFETs | ROHM Semiconductor | NCH 100V 100A, HSOP8, POWER MOSF | 2 | 1+: $5.65543 10+: $4.87715 30+: $4.41600 | |
TPW2900ENH,L1QSingle FETs, MOSFETs | Toshiba Electronic Devices and Storage Corporation | PB-F POWER MOSFET TRANSISTOR DSO | 55 | 1+: $3.46285 10+: $3.37715 30+: $3.32057 | |
TK3P80E,RQSingle FETs, MOSFETs | Toshiba Electronic Devices and Storage Corporation | PB-F POWER MOSFET TRANSISTOR DPA | 4065 | 10+: $0.85715 30+: $0.75257 100+: $0.63600
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TJ90S04M3L,LQSingle FETs, MOSFETs | Toshiba Electronic Devices and Storage Corporation | PB-F POWER MOSFET TRANSISTOR DPA | 33 | 1+: $1.94228 10+: $1.87543 30+: $1.83257 | |
TPN1200APL,L1QSingle FETs, MOSFETs | Toshiba Electronic Devices and Storage Corporation | PB-F POWER MOSFET TRANSISTOR TSO | 99 | 1+: $1.46915 10+: $1.21543 30+: $1.07657 | |
SSM3K16FV,L3FSingle FETs, MOSFETs | Toshiba Electronic Devices and Storage Corporation | PB-F VESM S-MOS (LF) TRANSISTOR | 235 | 5+: $0.12205 50+: $0.11905 150+: $0.11705 | |
SSM6K810R,LFSingle FETs, MOSFETs | Toshiba Electronic Devices and Storage Corporation | SMALL SIGNAL MOSFET N-CH VDSS=10 | 204 | 1+: $0.44572 10+: $0.43372 30+: $0.42685 | |
AS2324Single FETs, MOSFETs | Anbon Semiconductor | N-CHANNEL ENHANCEMENT MODE MOSFE | 262 | 200+: $0.02873 600+: $0.02456 3000+: $0.02345
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AS2312Single FETs, MOSFETs | Anbon Semiconductor | N-CHANNEL ENHANCEMENT MODE MOSFE | 4967 | 100+: $0.04181 300+: $0.03640 3000+: $0.03023
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AS2302Single FETs, MOSFETs | Anbon Semiconductor | N-CHANNEL ENHANCEMENT MODE MOSFE | 3267 | 200+: $0.01948 600+: $0.01674 3000+: $0.01282
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S2M0025120DSingle FETs, MOSFETs | SMC Diode Solutions | MOSFET SILICON CARBIDE SIC 1200V | 2 | 1+: $22.75200 25+: $21.59143 | |
S2M0080120DSingle FETs, MOSFETs | SMC Diode Solutions | MOSFET SILICON CARBIDE SIC 1200V | 25 | 1+: $9.16972 10+: $7.86515 25+: $7.06972 | |
S2M0025120KSingle FETs, MOSFETs | SMC Diode Solutions | MOSFET SILICON CARBIDE SIC 1200V | 6 | 1+: $23.15485 30+: $21.97372 | |
STD65N160M9Single FETs, MOSFETs | STMicroelectronics | N-CHANNEL 650 V, 132 MOHM TYP., | 13 | 1+: $3.90343 10+: $3.80572 30+: $3.74228 | |
BSC007N04LS6SCATMA1Single FETs, MOSFETs | Infineon Technologies | TRENCH <= 40V | 재고 | 1+: $3.03772 10+: $2.97428 30+: $2.93143
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ISC240P06LMATMA1Single FETs, MOSFETs | Infineon Technologies | TRENCH 40<-<100V | 95 | 1+: $2.28343 10+: $1.94743 30+: $1.73657 | |
IMT65R030M1HXUMA1Single FETs, MOSFETs | Infineon Technologies | SILICON CARBIDE MOSFET | 재고 | 2000+: $8.29876 | |
AIMBG120R010M1XTMA1Single FETs, MOSFETs | Infineon Technologies | SIC_DISCRETE | 11 | 1+: $56.47885 30+: $53.55943 | |
IMT65R039M1HXUMA1Single FETs, MOSFETs | Infineon Technologies | SILICON CARBIDE MOSFET | 33 | 1+: $11.86285 10+: $10.07485 30+: $8.98457 | |
STP80N450K6Single FETs, MOSFETs | STMicroelectronics | N-CHANNEL 800 V, 400 MOHM TYP., | 59 | 1+: $4.76400 10+: $4.10915 50+: $3.72000 | |
S2M0040120KSingle FETs, MOSFETs | SMC Diode Solutions | MOSFET SILICON CARBIDE SIC 1200V | 22 | 1+: $13.27715 10+: $11.49772 30+: $9.78172 | |
STP65N150M9Single FETs, MOSFETs | STMicroelectronics | N-CHANNEL 650 V, 128 MOHM TYP., | 33 | 1+: $2.76000 10+: $2.69315 30+: $2.64685 |