BJT(이산 양극 접합 트랜지스터)는 일반적으로 오디오, 라디오 및 기타 응용 분야에서 아날로그 신호 증폭 기능을 구성하는 데 사용됩니다. 대량 생산된 최초의 반도체 장치 중 하나인 이 장치의 특성은 고주파 스위칭 및 고전류 또는 전압 작동과 관련된 응용 분야에서 다른 장치 유형보다 덜 선호되지만, 아날로그 신호 재생이 필요한 응용 분야에서는 여전히 선택되는 기술입니다. 추가되는 소음과 왜곡을 최소화합니다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
2SA1213-Y(TE12L,ZCSingle Bipolar Transistors | Toshiba Electronic Devices and Storage Corporation | Trans GP BJT PNP 50V 2A 4-Pin(3+Tab) PW-Mini T/R | 4371 | 1+: $0.06590 1000+: $0.05960 | |
MMBT5401-13-FSingle Bipolar Transistors | Diodes Incorporated | Trans GP BJT PNP 150V 0.6A 350mW 3-Pin SOT-23 T/R | 8804 | 1+: $0.02410 10000+: $0.02200 | |
BCX53TCSingle Bipolar Transistors | Diodes Incorporated | Trans GP BJT PNP 80V 1A 2000mW 4-Pin(3+Tab) SOT-89 T/R | 10 | 1+: $0.11820 10+: $0.09460 30+: $0.08280 | |
BC856BW-13-FSingle Bipolar Transistors | Diodes Incorporated | Trans GP BJT PNP 65V 0.1A 200mW 3-Pin SOT-323 T/R | 5925 | - | |
2N5401YTASingle Bipolar Transistors | onsemi | High Current PNP Bipolar Transistor, TO-92, 2000-FNFLD | 2792 | 1+: $0.05400 2000+: $0.04900 | |
2SB1197KT146RSingle Bipolar Transistors | ROHM Semiconductor | Trans GP BJT PNP 32V 0.8A 200mW 3-Pin SMT T/R | 312403 | 1+: $0.02830 3000+: $0.02500 | |
2SA1943-O(S1,F,S)Single Bipolar Transistors | Toshiba Electronic Devices and Storage Corporation | Trans GP BJT PNP 230V 15A 150000mW 3-Pin(3+Tab) TO-3PL Magazine | 90 | 1+: $1.79890 10+: $1.52780 25+: $1.35690 | |
2SA1736(TE12L,ZC)Single Bipolar Transistors | Toshiba Electronic Devices and Storage Corporation | Trans GP BJT PNP 50V 3A 4-Pin(3+Tab) PW-Mini | 898 | 1+: $0.14510 1000+: $0.14100 | |
2SA1587-GR,LF(TSingle Bipolar Transistors | Toshiba Electronic Devices and Storage Corporation | Trans GP BJT PNP 120V 0.1A 100mW 3-Pin USM T/R | 5896 | - | |
2SC3326-B,LF(TSingle Bipolar Transistors | Toshiba Electronic Devices and Storage Corporation | Trans GP BJT NPN 20V 0.3A 150mW Automotive AEC-Q101 3-Pin S-Mini T/R | 3728 | 1+: $0.04760 3000+: $0.04210 | |
2SA1941-O(Q)Single Bipolar Transistors | Toshiba Electronic Devices and Storage Corporation | Trans GP BJT PNP 140V 10A 100000mW 3-Pin(3+Tab) TO-3PN | 1430 | 1+: $1.19600 10+: $1.01030 30+: $0.91830
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2SA1832-Y,LF(TSingle Bipolar Transistors | Toshiba Electronic Devices and Storage Corporation | Trans GP BJT PNP 50V 0.15A 100mW Automotive AEC-Q101 3-Pin SSM T/R | 726 | - | |
2SA1941-O(S1,E,S)Single Bipolar Transistors | Toshiba Electronic Devices and Storage Corporation | Transistor Silicon PNP Triple Diffused Type | 1 | 1+: $0.78030 25+: $0.72280 | |
2SC5692(TE85L,F)Single Bipolar Transistors | Toshiba Electronic Devices and Storage Corporation | Trans GP BJT NPN 50V 2.5A 625mW 3-Pin TSM T/R | 5995 | 1+: $0.41400 10+: $0.33020 30+: $0.29570
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2SD2686(TE12L,ZC)Single Bipolar Transistors | Toshiba Electronic Devices and Storage Corporation | Trans Darlington NPN 70V 1A 1000mW 4-Pin(3+Tab) PW-Mini T/R | 795 | 1+: $0.20840 10+: $0.16290 30+: $0.14340 | |
2SD2719(TE85L,F)Single Bipolar Transistors | Toshiba Electronic Devices and Storage Corporation | Trans GP BJT NPN 70V 0.8A 1250mW 3-Pin TSM T/R | 6000 | 1+: $0.08810 3000+: $0.08180 | |
2SC6135,LF(TSingle Bipolar Transistors | Toshiba Electronic Devices and Storage Corporation | Trans GP BJT NPN 50V 1A 800mW 3-Pin UFM T/R | 2266 | - | |
2SC5810(TE12L,ZF)Single Bipolar Transistors | Toshiba Electronic Devices and Storage Corporation | Transistor Silicon NPN Epitaxial Type | 875 | 1+: $0.26010 10+: $0.20210 30+: $0.17730 | |
2SC5198-O(Q)Single Bipolar Transistors | Toshiba Electronic Devices and Storage Corporation | Trans GP BJT NPN 140V 10A 3-Pin(3+Tab) TO-3PN | 172 | 1+: $0.61110 500+: $0.56680 | |
2SC4116-GR(TE85L,FSingle Bipolar Transistors | Toshiba Electronic Devices and Storage Corporation | Trans GP BJT NPN 50V 0.15A 100mW Automotive AEC-Q101 3-Pin USM T/R | 12640 | 1+: $0.03640 10+: $0.02910 30+: $0.02510
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2SC2712-Y(TE85L,F)Single Bipolar Transistors | Toshiba Electronic Devices and Storage Corporation | Trans GP BJT NPN 50V 0.15A 150mW Automotive AEC-Q101 3-Pin S-Mini T/R | 5278 | 1+: $0.01280 3000+: $0.01020 | |
2SC5810(TE12L,F)Single Bipolar Transistors | Toshiba Electronic Devices and Storage Corporation | Trans GP BJT NPN 50V 1A 2000mW 4-Pin(3+Tab) PW-Mini T/R | 315 | 1+: $0.20620 10+: $0.16060 30+: $0.14110
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2DA1797Q-13Single Bipolar Transistors | Diodes Incorporated | Trans GP BJT PNP 50V 3A 2000mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-89 T/R | 4 | 1+: $0.12570 2500+: $0.11630 | |
BC846BW-13-FSingle Bipolar Transistors | Diodes Incorporated | Trans GP BJT NPN 65V 0.1A 200mW 3-Pin SOT-323 T/R | 1752 | 1+: $0.01680 10000+: $0.01530 | |
BC847CW-13-FSingle Bipolar Transistors | Diodes Incorporated | Trans GP BJT NPN 45V 0.1A 200mW 3-Pin SOT-323 T/R | 3 | 1+: $0.01720 10000+: $0.01410 |