RF 트랜지스터, FET 및 MOSFET은 장치를 통해 흐르는 전류가 전기장에 의해 제어되는 3개의 단자가 있는 반도체 장치입니다. 이 제품군의 장치는 무선 주파수와 관련된 장비에 사용되도록 설계되었습니다. 신호나 전력을 증폭하거나 스위칭하는 트랜지스터 종류로는 E-pHEMT, LDMOS, MESFET, N채널, P채널, pHEMT, 탄화규소, 2N채널, 4N채널 등이 있다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
ATF-33143-BLKGRF FETs, MOSFETs | Broadcom | GaAs RF FET, 2GHz, 5.5V, 305mA, 0.5dB NF, SOT-343 | 재고 | - | |
ATF-36077-STRRF FETs, MOSFETs | Broadcom | GaAs RF FET, 12GHz, 0.5dB NF, 45mA ID, 3V Vdss, SMD | 6402 | - | |
ATF-36163-BLKGRF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 6 PIN | 재고 | - | |
ATF-38143-BLKGRF FETs, MOSFETs | Broadcom | GaAs RF FET, 2GHz, 16dB Gain, 0.4dB NF, SOT-343 | 재고 | - | |
ATF-551M4-BLKRF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, 1.40 MM X 1.20 MM, 0.70 MM HEIGHT, MINIATURE, LEADLESS PACKAGE-4 | 1818 | - | |
ATF-35143-BLKGRF FETs, MOSFETs | Broadcom | RF FET, 2GHz, 18dB Gain, 0.4dB NF, SOT-343, N-Channel | 1506 | - | |
ATF-38143-TR2GRF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 4 PIN | 재고 | - | |
ATF-36163-TR2GRF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 6 PIN | 24168 | - | |
ATF-58143-TR2GRF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 4 PIN | 재고 | - | |
ATF-33143-TR2GRF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 4 PIN | 재고 | - | |
ATF-54143-TR2GRF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 4 PIN | 재고 | - | |
ATF-551M4-TR2RF FETs, MOSFETs | Broadcom | Trans JFET N-CH 5V 100mA GaAs pHEMT 4-Pin Mini-PAK T/R | 재고 | - | |
ATF-55143-TR2GRF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 4 PIN | 재고 | - | |
ATF-34143-TR2GRF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 4 PIN | 재고 | - | |
ATF-531P8-TR2RF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, PLASTIC, DFP-N, LCC-8 | 재고 | - | |
ATF-52189-TR2RF FETs, MOSFETs | Broadcom | RF JFET Transistors Transistor GaAs Hi gh Linearity | 재고 | - | |
ATF-501P8-TR2RF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT,LEAD FREE, PLASTIC,LPCC-8 | 재고 | - | |
ATF-50189-TR2RF FETs, MOSFETs | Broadcom | RF MOSFET E-PHEMT 4.5V SOT89 | 재고 | - | |
ATF-58143-TR1GRF FETs, MOSFETs | Broadcom | GaAs RF FET Transistor, 2GHz, 5V, 100mA, 0.5dB NF, SOT-343 | 33308 | - | |
PD84008-ERF FETs, MOSFETs | STMicroelectronics | RF Power LDMOS transistor | 10016 | - | |
PD84010-ERF FETs, MOSFETs | STMicroelectronics | RF Power LDMOS transistor | 369 | - | |
PD85006L-ERF FETs, MOSFETs | STMicroelectronics | 870MHz 6W LDMOS RF Transistor, 40V, 2A, N-CH, Surface Mount | 재고 | - | |
BF245B_J35ZRF FETs, MOSFETs | onsemi | IC AMP RF N-CH 30V 10MA TO-92 | 재고 | - | |
BF256B_J35ZRF FETs, MOSFETs | onsemi | RF MOSFET JFET 30V TO92-3 | 재고 | - | |
BF256C_J35ZRF FETs, MOSFETs | onsemi | Trans JFET N-CH 3-Pin TO-92 | 재고 | - |