사전 바이어스 바이폴라 트랜지스터 어레이는 유용할 수 있는 방식으로 각 트랜지스터에 연결된 저항기와 함께 두 개 이상의 바이폴라 트랜지스터를 통합합니다. 일반적으로 각 트랜지스터의 이미터와 베이스 단자 사이에 하나의 저항기가 있고 각 트랜지스터의 베이스 단자에 다른 저항기가 연결되어 있습니다. 장치 패키지에 있는 사용자 접근 가능 핀.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
RN1701,LFBipolar Transistor Arrays, Pre-Biased | Toshiba Electronic Devices and Storage Corporation | NPNX2 BRT Q1BSR4.7KOHM Q1BER4.7K | 6359 | - | |
RN1708,LFBipolar Transistor Arrays, Pre-Biased | Toshiba Electronic Devices and Storage Corporation | NPNX2 BRT Q1BSR22KOHM Q1BER47KOH | 1697 | - | |
RN1909,LF(CTBipolar Transistor Arrays, Pre-Biased | Toshiba Electronic Devices and Storage Corporation | NPNX2 BRT Q1BSR47KOHM Q1BER22KOH | 2392 | - | |
RN1911,LF(CTBipolar Transistor Arrays, Pre-Biased | Toshiba Electronic Devices and Storage Corporation | NPNX2 BRT Q1BSR10KOHM Q1BERINF.K | 8723 | - | |
RN2701,LFBipolar Transistor Arrays, Pre-Biased | Toshiba Electronic Devices and Storage Corporation | PNPX2 BRT Q1BSR4.7KOHM Q1BER4.7K | 4169 | - | |
RN2702,LFBipolar Transistor Arrays, Pre-Biased | Toshiba Electronic Devices and Storage Corporation | TRANSISTOR PNPX2 BRT Q1BSR10KOHM | 6000 | - | |
RN2703,LFBipolar Transistor Arrays, Pre-Biased | Toshiba Electronic Devices and Storage Corporation | PNPX2 BRT Q1BSR22KOHM Q1BER22KOH | 8699 | - | |
RN2705,LFBipolar Transistor Arrays, Pre-Biased | Toshiba Electronic Devices and Storage Corporation | PNPX2 BRT Q1BSR2.2KOHM Q1BER47KO | 1285 | - | |
RN2706,LFBipolar Transistor Arrays, Pre-Biased | Toshiba Electronic Devices and Storage Corporation | PNPX2 BRT Q1BSR4.7KOHM Q1BER47KO | 6000 | - | |
RN2707,LFBipolar Transistor Arrays, Pre-Biased | Toshiba Electronic Devices and Storage Corporation | PNPX2 BRT Q1BSR10KOHM Q1BER47KOH | 3000 | - | |
RN2708,LFBipolar Transistor Arrays, Pre-Biased | Toshiba Electronic Devices and Storage Corporation | PNPX2 BRT Q1BSR10KOHM Q1BER47KOH | 8886 | - | |
RN2709,LFBipolar Transistor Arrays, Pre-Biased | Toshiba Electronic Devices and Storage Corporation | PNPX2 BRT Q1BSR22KOHM Q1BER47KOH | 3000 | - | |
RN2710,LFBipolar Transistor Arrays, Pre-Biased | Toshiba Electronic Devices and Storage Corporation | PNPX2 BRT Q1BSR47KOHM Q1BER22KOH | 6000 | - | |
RN2714,LFBipolar Transistor Arrays, Pre-Biased | Toshiba Electronic Devices and Storage Corporation | PNPX2 BRT Q1BSR1KOHM Q1BER10KOHM | 재고 | - | |
RN2901,LF(CTBipolar Transistor Arrays, Pre-Biased | Toshiba Electronic Devices and Storage Corporation | PNPX2 BRT Q1BSR4.7KOHM Q1BER4.7K | 5836 | - | |
RN2906FE,LF(CTBipolar Transistor Arrays, Pre-Biased | Toshiba Electronic Devices and Storage Corporation | PNPX2 BRT Q1BSR4.7KOHM Q1BER47KO | 3976 | - | |
RN2909,LF(CTBipolar Transistor Arrays, Pre-Biased | Toshiba Electronic Devices and Storage Corporation | PNPX2 BRT Q1BSR47KOHM Q1BER22KOH | 8894 | - | |
RN4901FE,LF(CTBipolar Transistor Arrays, Pre-Biased | Toshiba Electronic Devices and Storage Corporation | PNP + NPN BRT Q1BSR4.7KOHM Q1BER | 330 | - | |
RN4908,LF(CTBipolar Transistor Arrays, Pre-Biased | Toshiba Electronic Devices and Storage Corporation | PNP + NPN BRT Q1BSR10KOHM Q1BER4 | 3000 | - | |
RN4909,LF(CTBipolar Transistor Arrays, Pre-Biased | Toshiba Electronic Devices and Storage Corporation | PNP + NPN BRT Q1BSR22KOHM Q1BER4 | 3000 | - | |
RN4911,LF(CTBipolar Transistor Arrays, Pre-Biased | Toshiba Electronic Devices and Storage Corporation | PNP + NPN BRT Q1BSR4.7KOHM Q1BER | 3000 | - | |
RN4985FE,LF(CTBipolar Transistor Arrays, Pre-Biased | Toshiba Electronic Devices and Storage Corporation | NPN + PNP BRT Q1BSR2.2KOHM Q1BER | 343 | - | |
RN4988FE,LF(CTBipolar Transistor Arrays, Pre-Biased | Toshiba Electronic Devices and Storage Corporation | NPN + PNP BRT Q1BSR22KOHM Q1BER4 | 10685 | - | |
RN4989FE,LF(CTBipolar Transistor Arrays, Pre-Biased | Toshiba Electronic Devices and Storage Corporation | NPN + PNP BRT Q1BSR47KOHM Q1BER2 | 4000 | - | |
RN4991FE,LF(CTBipolar Transistor Arrays, Pre-Biased | Toshiba Electronic Devices and Storage Corporation | NPN + PNP BRT Q1BSR10KOHM Q1BERI | 재고 | - |