양극성 RF 트랜지스터는 무선 주파수와 관련된 장비에서 신호를 전환하거나 증폭하는 데 사용되는 3개의 단자가 있는 반도체 장치입니다. 바이폴라 접합 트랜지스터는 NPN 또는 PNP로 설계되었으며 트랜지스터 유형, 컬렉터-에미터 항복 전압, 전이 주파수, 잡음 지수, 이득, 전력, DC 전류 이득 및 컬렉터 전류의 특성을 갖습니다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
BFP405E6740HTSA1Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 5V 25GHZ SOT343-4 | 재고 | - | |
BFR 360F E6765Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 9V 14GHZ TSFP-3 | 1101 | - | |
AT-41535GBipolar RF Transistors | Broadcom | NPN BJT Transistor 12V 60mA 8GHz SMD | 재고 | - | |
AT-42000-GP4Bipolar RF Transistors | Broadcom | RF NPN Transistor, 9GHz, 80mA, 12V, 600mW, SMT Chip | 재고 | - | |
AT-64000-GP4Bipolar RF Transistors | Broadcom | RF Power Bipolar Transistor, 1-Element, High Frequency Band, Silicon, NPN, DIE-5 | 재고 | - | |
2SC5662T2LNBipolar RF Transistors | ROHM Semiconductor | RF TRANS NPN 11V 0.05A VMT3 | 재고 | - | |
BFP182WH6327XTSA1Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 12V 8GHZ SOT343-4 | 7386 | - | |
BFP183WH6327XTSA1Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 12V 8.5GHZ SOT343-4 | 11400 | - | |
BFP460H6327XTSA1Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 5.8V 22GHZ SOT343-4 | 40 | - | |
BFP460H6433XTMA1Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 5.8V 22GHZ SOT343-4 | 206 | - | |
BFP520FH6327XTSA1Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 3.5V 45GHZ 4TSFP | 1169 | - | |
BFP760H6327XTSA1Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 4V 45GHZ SOT343 | 16262 | - | |
BFP843H6327XTSA1Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 2.25V SOT343 | 6138 | - | |
BFP843FH6327XTSA1Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 2.25V TSFP-4-1 | 3000 | - | |
2N2857 PBFREEBipolar RF Transistors | Central Semiconductor | RF TRANS NPN 15V 1.9GHZ TO72 | 2703 | - | |
2N3866 PBFREEBipolar RF Transistors | Central Semiconductor | RF TRANS NPN 30V 500MHZ TO39 | 재고 | - | |
2N5109 PBFREEBipolar RF Transistors | Central Semiconductor | RF TRANS NPN 20V 1.2GHZ TO39 | 19507 | - | |
2N5770 PBFREEBipolar RF Transistors | Central Semiconductor | RF TRANS NPN 15V 900MHZ TO92 | 6839 | - | |
2N918 PBFREEBipolar RF Transistors | Central Semiconductor | RF TRANS NPN 15V 600MHZ TO72 | 1168 | - | |
2SC5415AF-TD-EBipolar RF Transistors | onsemi | RF Transistor, NPN Single, 12 V, 100 mA, fT = 6.7 GHz, SOT-89 / PCP-1, 1000-REEL | 170 | - | |
JANTX2N2857Bipolar RF Transistors | Microsemi | RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-72, HERMETIC SEALED, METAL CAN-4 | 29016 | - | |
MT3S111(TE85L,F)Bipolar RF Transistors | Toshiba Electronic Devices and Storage Corporation | RF TRANS NPN 6V 11.5GHZ SMINI | 7771 | - | |
MT3S111P(TE12L,F)Bipolar RF Transistors | Toshiba Electronic Devices and Storage Corporation | RF TRANS NPN 6V 8GHZ PW-MINI | 재고 | - | |
MT3S113TU,LFBipolar RF Transistors | Toshiba Electronic Devices and Storage Corporation | RF TRANS NPN 5.3V 11.2GHZ UFM | 2199 | - | |
NSVF4017SG4T1GBipolar RF Transistors | onsemi | RF Transistor for Low Noise Amplifier, 3000-REEL | 재고 | - |