양극성 RF 트랜지스터는 무선 주파수와 관련된 장비에서 신호를 전환하거나 증폭하는 데 사용되는 3개의 단자가 있는 반도체 장치입니다. 바이폴라 접합 트랜지스터는 NPN 또는 PNP로 설계되었으며 트랜지스터 유형, 컬렉터-에미터 항복 전압, 전이 주파수, 잡음 지수, 이득, 전력, DC 전류 이득 및 컬렉터 전류의 특성을 갖습니다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
BFP196E6327HTSA1Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 12V 7.5GHZ SOT143-4 | 100 | - | |
BFP 196R E6501Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 12V 7.5GHZ SOT143-4 | 재고 | - | |
BFP405E6433HTMA1Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 5V 25GHZ SOT343-4 | 재고 | - | |
BFP 405F E6327Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 5V 25GHZ 4TSFP | 재고 | - | |
BFP460E6327HTSA1Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 5.8V 22GHZ SOT343-4 | 18905 | - | |
BFP740E6327HTSA1Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 4.7V 42GHZ SOT343-4 | 27018 | - | |
BFP 740F E6327Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 4.7V 42GHZ 4TSFP | 530 | - | |
BFR106E6327HTSA1Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 15V 5GHZ SOT23-3 | 74553 | - | |
BFR181E6327HTSA1Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 12V 8GHZ SOT23-3 | 17600 | - | |
BFR 181 E6780Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 12V 8GHZ SOT23-3 | 재고 | - | |
BFR 181W E6327Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 12V 8GHZ SOT323-3 | 재고 | - | |
BFR 182 B6663Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 12V 8GHZ SOT23-3 | 재고 | - | |
BFR 182T E6327Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 12V 8GHZ SC75 | 재고 | - | |
BFR 182W E6327Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 12V 8GHZ SOT323-3 | 재고 | - | |
BFR183E6327HTSA1Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 12V 8GHZ SOT23-3 | 2 | 1+: $0.08590 3000+: $0.08000 | |
BFR 183T E6327Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 12V 8GHZ SC75 | 18067 | - | |
BFR 183W E6327Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 12V 8GHZ SOT323-3 | 재고 | - | |
BFR193L3E6327XTMA1Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 12V 8GHZ TSLP-3-1 | 9730 | 1+: $0.09890 3000+: $0.09200 | |
BFR340L3E6327XTMA1Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 9V 14GHZ TSLP-3-1 | 10141 | - | |
BFR35APE6327HTSA1Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 15V 5GHZ SOT23-3 | 489 | - | |
2SC3583-T1B-ABipolar RF Transistors | CEL (California Eastern Laboratories) | RF TRANS NPN 10V 9GHZ SOT23 | 재고 | - | |
2SC3127ID-TL-EBipolar RF Transistors | Renesas Electronics Corporation | RF 0.05A, NPN | 42000 | - | |
NE85618-ABipolar RF Transistors | CEL (California Eastern Laboratories) | RF TRANS NPN 12V 6.5GHZ SOT343 | 재고 | - | |
NE664M04-T2-ABipolar RF Transistors | CEL (California Eastern Laboratories) | RF TRANS NPN 5V 20GHZ SOT343F | 재고 | - | |
NE85633-T1BBipolar RF Transistors | CEL (California Eastern Laboratories) | RF TRANS NPN 12V 7GHZ SOT23 | 6014 | - |