양극성 RF 트랜지스터는 무선 주파수와 관련된 장비에서 신호를 전환하거나 증폭하는 데 사용되는 3개의 단자가 있는 반도체 장치입니다. 바이폴라 접합 트랜지스터는 NPN 또는 PNP로 설계되었으며 트랜지스터 유형, 컬렉터-에미터 항복 전압, 전이 주파수, 잡음 지수, 이득, 전력, DC 전류 이득 및 컬렉터 전류의 특성을 갖습니다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
5962-9474901MEABipolar RF Transistors | Harris Corporation | NPN TRANSISTOR ARRAY | 1812 | - | |
BF-517Bipolar RF Transistors | Infineon Technologies | RF TRANSISTOR, NPN | 재고 | - | |
BF888H6327Bipolar RF Transistors | Infineon Technologies | RF TRANSISTOR, NPN | 재고 | - | |
BFP196WH6740Bipolar RF Transistors | Infineon Technologies | RF TRANSISTOR, L BAND, NPN | 99000 | - | |
BF771E6765NBipolar RF Transistors | Infineon Technologies | RF TRANSISTOR, NPN | 111000 | - | |
BFP420H6433Bipolar RF Transistors | Infineon Technologies | RF TRANSISTOR, X BAND, NPN | 30014 | - | |
12A02SS-TL-EBipolar RF Transistors | onsemi | BIP PNP 0.8A 12V | 104000 | - | |
BFP740FESDH6327Bipolar RF Transistors | Infineon Technologies | RF TRANSISTOR, X BAND, NPN | 재고 | - | |
BFP490E6327Bipolar RF Transistors | Infineon Technologies | SMALL SIGNAL BIPOLAR TRANSISTOR | 4238 | - | |
BFP420FH6327Bipolar RF Transistors | Infineon Technologies | RF TRANSISTOR, X BAND, NPN | 2562 | - | |
12A01C-TB-EBipolar RF Transistors | Sanyo | TRANSISTOR, PNP, 12V, 0.5A, SOT23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -12V; Typ Gain... | 96000 | - | |
BFP520FH6327Bipolar RF Transistors | Infineon Technologies | LOW-NOISE SI TRANSISTOR | 재고 | - | |
BFR340FH6327Bipolar RF Transistors | Infineon Technologies | LOW-NOISE TRANSISTOR | 재고 | - | |
BFP405FH6327Bipolar RF Transistors | Infineon Technologies | RF TRANSISTOR, L BAND, NPN | 재고 | - | |
BFP420H6740Bipolar RF Transistors | Infineon Technologies | RF TRANSISTOR, X BAND, NPN | 재고 | - | |
15C02SS-TL-EBipolar RF Transistors | onsemi | TRANSISTOR | 64000 | - | |
2SA1575E-TD-EBipolar RF Transistors | Sanyo | PNP DARLINGTON TRANSISTOR | 10761 | - | |
BFP420H6801Bipolar RF Transistors | Infineon Technologies | RF TRANSISTOR, X BAND, NPN | 재고 | - | |
BFP720FH6327Bipolar RF Transistors | Infineon Technologies | RF TRANSISTOR, X BAND, NPN | 재고 | - | |
BFR 360L3E6765Bipolar RF Transistors | Infineon Technologies | LOW-NOISE TRANSISTOR | 재고 | - | |
BFP7220ESDH6327Bipolar RF Transistors | Infineon Technologies | LOW-NOISE SIGE:C TRANSISTOR | 재고 | - | |
12A01M-TL-EBipolar RF Transistors | Sanyo | TRANSISTOR, PNP, 12V, 0.5A, SOT323; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -12V; Typ Gain... | 339000 | - | |
15GN03F-TL-EBipolar RF Transistors | onsemi | BIP NPN 70MA 10V FT=1.5G | 8000 | - | |
BFR193FH6327Bipolar RF Transistors | Infineon Technologies | HIGH LINEARITY TRANSISTOR | 재고 | - | |
BFU520X235Bipolar RF Transistors | NXP Semiconductors | NPN RF TRANSISTOR | 재고 | - |